A circuit includes a first transconductance stage having an output. The circuit further includes an output transconductance stage, and a first source-degenerated transistor having a first control input and first and second current terminals. The first control input is coupled to the output of the first transconductance stage. The circuit also includes a second transistor having a second control input and third and fourth current terminals. The third current terminal is coupled to the second current terminal and to the output transconductance stage.

Apparatus and methods for quadrature combined Doherty amplifiers are provided herein. In certain embodiments, a separator is used to separate a radio frequency (RF) input signal into a plurality of input signal components that are amplified by a pair of Doherty amplifiers operating in quadrature. Additionally, a combiner is used to combine a plurality of output signal components generated by the pair of Doherty amplifiers, thereby generating an RF output signal exhibiting quadrature balancing.

A method for improving the linearity of a radio frequency power amplifier, a compensation circuit (307) for implementing the method, and a communications terminal with the compensation circuit (307). In the method, a compensation circuit (307) is connected between a base (a3) and a collector (b3) of a transistor of a common emitter amplifier (306), in order to neutralize the impact of a variation in capacitance between the base (a3) and the collector (b3) of the transistor (306) according to a radio frequency signal. No additional direct-current power consumption is needed, and degradation in performance of other radio frequency power amplifiers can be avoided. The corresponding compensation circuit (307) can be easily integrated with a main amplification circuit, without affecting other performance of the main amplification circuit, and provides high adjustability.

A power amplifier includes a power splitter that splits a first signal into a second signal and a third signal, a first amplifier that amplifies the second signal within an area where the first signal has a power level greater than or equal to a first level and that outputs a fourth signal, a second amplifier that amplifies the third signal within an area where the first signal has a power level greater than or equal to a second level higher than the first level and that outputs a fifth signal, an output unit that outputs an amplified signal of the first signal, a first and a second LC parallel resonant circuit, and a choke inductor having an end to which a power supply voltage is supplied and another end connected to a node of the first and second LC parallel resonant circuits.

A transistor circuit includes a transistor having a gate terminal and first and second conduction terminals, a first circuit configured to convert an AC input signal of the transistor circuit to a gate bias voltage and to apply the gate bias voltage to the gate terminal of the transistor, a second circuit configured to convert the AC input signal of the transistor circuit to a control voltage, and a switching circuit configured to apply a first voltage to the first conduction terminal of the transistor in response to the control voltage.

A pseudo-resistor structure, comprises: a first and a second PMOS transistor or PN diode configured as two-terminal devices, wherein the positive terminal of the first PMOS transistor or PN diode is connected to the positive terminal of the second PMOS transistor or PN diode, and wherein the negative terminal of the first PMOS transistor or PN diode is connected to an input (A) of the pseudo-resistor structure and wherein the negative terminal of the second PMOS transistor or PN diode is connected to an output (C) of the pseudo-resistor structure, and a dummy transistor or dummy diode connected to the input (A), wherein the dummy transistor or dummy diode is further connected to a bias voltage for compensating a leakage current through the first and the second PMOS transistors or PN diodes. A closed-loop operational amplifier circuit comprising the pseudo-resistor structure is provided. Also, a bio-potential sensor comprising the closed-loop operational amplifier circuit is provided.

The present invention relates to an amplification device (10) of an input signal comprising: a first amplification stage (12), a second amplification stage (14), each amplification stage (12, 14) comprising: a switching circuit (22), the switching circuit (22) being able to generate, as output (22A, 22B), a switched signal having at least two states, and an inductive element (24) able to smooth the switched signal to obtain a smoothed signal (I1, I3), the smoothed signal (I1, I3) having a useful component and a stray component. The amplification device (10) further comprises a compensation circuit (16), for each amplification stage (12, 14), able to generate a compensation signal (I2, I4) of the stray component of the smoothed signal (I1, I3) generated in the inductive element (24) of the corresponding amplification stage (12, 14).

A transistor stack can include a combination of floating and body tied devices. Improved performance of the RF amplifier can be obtained by using a single body tied device as the input transistor of the stack, or as the output transistor of the stack, while other transistors of the stack are floating transistors. Transient response of the RF amplifier can be improved by using all body tied devices in the stack.

An amplifier circuit includes an input port, an output port, and a reference potential port, an RF amplifier device having an input terminal electrically coupled to the input port, an output terminal electrically coupled to the output port, and a reference potential terminal electrically coupled to the reference potential port. An impedance matching network is electrically connected to the output terminal, the reference potential port, and the output port. The impedance matching network includes a reactive efficiency optimization circuit that forms a parallel resonant circuit with a characteristic output impedance of the peaking amplifier at a center frequency of the fundamental frequency range. The impedance matching network includes a reactive frequency selective circuit that negates a phase shift of the RF signal in phase at the center frequency and exhibits a linear transfer characteristic in a baseband frequency range.

A control circuit with a bypass function includes a first signal terminal, a second signal terminal, an output terminal, a first switch unit to a fourth switch unit, an output switch unit and a bypass unit. The first signal terminal is used for receiving a first signal. The second signal terminal is used for receiving a second signal. The first switch unit is coupled to the first signal terminal. The second switch unit is coupled between the first switch unit and the output switch unit. The third switch unit is coupled to the second signal terminal. The fourth switch unit is coupled between the third switch unit and the output switch unit. The output switch unit is coupled between the second switch unit and the output terminal. The bypass unit is coupled between the first switch unit and the output terminal to provide a bypass path corresponding to the first signal.