Methods and devices addressing design of wideband LNAs with gain modes are disclosed. The disclosed teachings can be used to reconfigure RF receiver front-end to operate in various applications imposing stringent and conflicting requirements. Wideband and narrowband input and output matching with gain modes using a combination of the same hardware and a switching network are also disclosed. The described methods and devices also address carrier aggregation requirements and provide solutions that can be used both in single-mode and split-mode operations.

A temperature compensation circuit for a power amplifier is provided, wherein data of circuit configurations corresponding to specific temperatures (including data associated with an output terminal voltage, a bias voltage, an adaptive bias, and a matching impedance of the power amplifier) for the power amplifier is stored in a read-only memory. Therefore, the temperature compensation circuit is capable of reading the data according to a temperature sensing signal to adjust the circuit configuration of the power amplifier accordingly, thereby, in a case of a constant input power of the power amplifier, an output power variance of the power amplifier is within a second interval (e.g., −10%˜+10%) when an environment temperature varies within a first interval. Therefore, the power amplifier has a stable gain.

An amplifier may comprise first and second matching networks; first and second transistors; and a transformer including first to third inductors. Also, a gate and a source of the first transistor are connected to the first matching network, one end of the first inductor is connected to a drain of the first transistor, the other end of the first inductor is connected to a source of the second transistor, one end of the second inductor is connected to a gate of the second transistor, the other end of the second inductor is grounded, one end of the third inductor is connected to a drain of the second transistor, and the other end of the third inductor is connected to the second matching network.

A radio-frequency (RF) module includes a first transistor having a base, a collector, and an emitter, a radio-frequency output transmit path coupled to the collector of the first transistor at a first end and to a radio-frequency output port at a second end, and an output matching network disposed in the radio-frequency output transmit path, the output matching network including a shunt arm coupled to ground, the shunt arm including a switch that is controllable to modify an impedance of the output matching network.

A radio frequency (RF) device may include an RF signal source having a selectable frequency, an RF antenna, and an RF power amplifier module coupled between the RF signal source and the RF antenna. The RF power amplifier module may include at least one input tunable cavity impedance matching device, at least one output tunable cavity impedance matching device, and a power amplifier device connected therebetween. A controller may select the selectable frequency of the RF signal source, tune the at least one input tunable cavity impedance matching device based upon the selected frequency, and tune the at least one output tunable cavity impedance matching device based upon the selected frequency.

A protection circuit is provided. The protection circuit protects a power amplifier that includes a power transistor configured to receive a power voltage, and a bias circuit configured to supply a bias current to the power transistor. The protection circuit includes: a first transistor, connected between a terminal of the bias circuit and a ground, and configured to sink a first current from the terminal of the bias circuit; and a second transistor, comprising a first terminal connected to the power voltage, a second terminal connected to a control terminal of the first transistor, and a control terminal connected to a reference voltage.

A low noise amplifier includes: an amplification unit including a first transistor and a second transistor connected in a cascade structure and configured to amplify a signal input to a control terminal of the first transistor; and a gain controller connected between a contact point at which the first transistor and the second transistor are connected to each other and a power source voltage, and configured to adjust a gain of the amplification unit.

According to certain aspects, a chip includes a pad, a power amplifier, a transformer coupled between an output of the power amplifier and the pad, a transistor coupled between the transformer and a ground, and a first clamp circuit coupled between a gate of the transistor and a drain of the transistor.

Examples of the disclosure include an amplifier system comprising an amplifier having an input to receive an input signal, and an output to provide an amplified output signal, the amplifier having a power level indicative of at least one of the input signal power and the amplified output signal power, and a linearizer coupled to the amplifier and having a plurality of modes of operation including a fully disabled mode and a fully enabled mode, the linearizer being configured to determine the power level of the amplifier, select a mode of operation of the plurality of modes of operation based on the power level of the amplifier, determine one or more linearization parameters corresponding to the selected mode of operation, and control linearization of the amplified output signal based on the determined one or more linearization parameters.

An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a III-V semiconductor substrate, a first RF signal input terminal, a first RF signal output terminal, and a transistor (e.g., a GaN FET). The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.