A wideband amplifier includes a first stage and a second stage. The first stage includes a transconductance transistor driven by an input signal through an input transformer. The transconductance transistor couples to a cascode transistor forming an output node for the first stage. The second stage couples the output node from the first stage through an output transformer to drive an output transistor.

An amplifying circuit is provided. The amplifying circuit includes a bias circuit receiving an operating voltage from a power supply circuit and generating a first bias voltage, a resistance circuit connected between the bias circuit and a gate node and transferring the first bias voltage to the gate node, a start-up circuit generating a high-level start-up voltage and supplying the start-up voltage to the gate node before the operating voltage is supplied, based on a control signal, and an amplifier started-up by receiving the start-up voltage and then receiving the operating voltage and the first bias voltage to amplify a high frequency signal input through the gate node.

A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.

A power amplification circuit includes: a first amplifier that is input with a first signal and outputs a second signal; a bias circuit that supplies a bias current or voltage to the first amplifier; and a control voltage generating circuit that generates a control voltage in accordance with the first signal. The bias circuit includes a first transistor that outputs the bias current or voltage, a second transistor provided between the emitter or source of the first transistor and ground, and a third transistor that is supplied with the control voltage and that supplies a first current or voltage to the second transistor. The value of the first current or voltage when the signal level is a first level is larger than the value of the first current or voltage when the signal level is a second level. The first level is higher than the second level.

A method for facilitating the impedance matching of radiofrequency circuits, notably transmission circuits using a power amplifier connected to a load which may include an antenna. A signal is produced for measuring the temperature resulting from the operation of the output amplifier stage, by a temperature sensor positioned in the immediate vicinity of this stage, the measuring signal is used to control a circuit for controlling the variable impedances of a matching network positioned between the amplifier and the load, and values which seek to minimize the sensed temperature are applied to these variable impedances values. An abnormal heating of the amplifier is an indication of an impedance mismatch that must be corrected to restore a minimum temperature.

In one embodiment, an RF generator includes an RF amplifier comprising an RF input, a DC input, and an RF output, the RF amplifier configured to receive at the RF input an RF signal from an RF source; receive at the DC input a DC voltage from a DC source; and provide an output power at the RF output; and a control unit operably coupled to the DC source and the RF source, the control unit configured to receive a power setpoint indicative of a desired output power at the RF output; determine a power dissipation at the RF generator; alter the DC voltage to decrease the power dissipation at the RF generator; and alter the RF signal to enable the output power at the RF output to be substantially equal to the power setpoint.

The present disclosure provides example power amplifier combiner apparatuses and power amplifier circuits. One example power amplifier combiner apparatus includes a signal processing unit and n power amplifier units. The signal processing unit is separately coupled to input terminals of the n power amplifier units. Output terminals of the n power amplifier units are separately coupled to a load. When an output power of the power amplifier combiner apparatus is less than a first threshold, the signal processing unit controls a first power amplifier unit to operate. When the output power is greater than or equal to an i.sup.th threshold and is less than an (i+1).sup.th threshold, the signal processing unit controls the first i+1 power amplifier units to operate. When the output power is not less than an (n−1).sup.th threshold, the signal processing unit controls the n power amplifier units to operate, where i=1, . . . , or n−2.

A direct current (DC)-DC converter that includes a first switching converter and a multi-stage filter is disclosed. The multi-stage filter includes at least a first inductance (L) capacitance (C) filter and a second LC filter coupled in series between the first switching converter and a DC-DC converter output. The first LC filter has a first LC time constant and the second LC filter has a second LC time constant, which is less than the first LC time constant. The first LC filter includes a first capacitive element having a first self-resonant frequency, which is about equal to a first notch frequency of the multi-stage filter.

Various embodiments relate to an apparatus and a method for processing a radio signal in an electronic device. The electronic device may include: a communication processor; and a power amplifier electrically connected to the communication processor, the power amplifier including a first switch, an input port, a first output port, and a second output port, the power amplifier further including a first amplification circuit disposed on a first electrical path between the input port and the first switch, a second amplification circuit disposed on a second electrical path between the first switch and the first output port, and a third amplification circuit disposed on a third electrical path between the first switch and the second output port.

A power amplifier system for amplifying an input having a carrier frequency having an amplitude. The system includes a plurality of n amplifiers coupled to an asymmetrical combiner formed of a passive network, each amplifier has an input and an output, the asymmetrical combiner has a plurality of inputs and an output, the output of each amplifier is coupled to an input of the asymmetrical combiner, an impedance viewed at the output of each of the n amplifiers is a function of the amplitude and phase at each of the other n−1 amplifiers. An amplitude/phase controller is coupled to the plurality of n amplifiers or the asymmetrical combiner to control the amplitude/phase at the asymmetrical combiner input. The amplitude/phase controller is configured to present an amplitude/phase at each input of the asymmetrical combiner to target an optimal impedance at the carrier frequency for each of the plurality of n amplifiers.