A receiver front end having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.

A transmission/reception module includes a substrate including a transmission signal input terminal, a reception signal output terminal, and an antenna terminal, an antenna switch circuit provided on the substrate and configured to output a transmission signal input from the transmission signal input terminal to the antenna terminal and configured to output a reception signal input from the antenna terminal to the reception signal output terminal, and a first inductor included in an input/output filter circuit provided between the antenna switch circuit and the antenna terminal. The first inductor includes a conductor whose winding axis direction is orthogonal to the substrate.

A power amplifier circuit includes: an amplifier that amplifies an input signal; and a resonant circuit that is connected to an output terminal of the amplifier and that attenuates a harmonic wave of an amplified signal obtained by amplifying the input signal. The resonant circuit includes an inductor disposed between the amplifier and a ground, a capacitive element disposed between the amplifier and the ground and connected in series to the inductor, an inductor connected in parallel to the inductor, a switch connected in series to the inductor, and a switch that is connected in parallel to the switch and that is of an element size common to an element size of the switch.

A power amplifier circuit includes an amplifier that amplifies an input signal RFin, a matching circuit that provides impedance matching between an output port of the amplifier and an output terminal, an input of the matching circuit being connected to the output port of the amplifier, an output of the matching circuit being connected to the output terminal, and a resonant circuit provided between ground and a signal path that connects the output port of the amplifier and the input of the matching circuit, the resonant circuit resonating at a resonant frequency greater than or equal to the frequency of a fourth harmonic wave of an amplified signal obtained by amplifying the input signal.

A first sub-collector layer functions as an inflow path of a collector current that flows in a collector layer of a heterojunction bipolar transistor. A collector ballast resistor layer having a lower doping concentration than the first sub-collector layer is disposed between the collector layer and the first sub-collector layer.

Embodiments of the present disclosure include a harmonic power amplifying circuit with high efficiency and high bandwidth and a radio-frequency power amplifier. The circuit comprises an input matching network (11), a transistor (M), and an output matching network (12); a gate of the transistor (M) connected to an output end of the input matching network (11), a drain thereof connected to an input end of the output matching network (12), and a source thereof being grounded; wherein the output matching network (12) enables a lower sideband of the harmonic power amplifying circuit to work in a continuous inverse F amplification mode and an upper sideband of the harmonic power amplifying circuit to work in a continuous F amplification mode; wherein the output matching network (12) and a parasitic network of the transistor (M) form a low pass filter. By transitioning from the continuous inverse F power amplifier working mode to the continuous F power amplifier working mode, the efficiency of a continuous harmonic control power amplifier is effectively improved to be higher than 60%, a relative bandwidth is improved to be higher than 80%, and the harmonic impedance is simple to match and easy to realize.

An RF amplifier includes an amplifier input, a transistor die with a transistor and a transistor input terminal, a fundamental frequency impedance matching circuit coupled between the amplifier input and the transistor input terminal, and a harmonic frequency termination circuit coupled between the transistor input terminal and a ground reference node. The harmonic frequency termination circuit includes a first inductance coupled between the transistor input terminal and a first node, and a tank circuit coupled between the first node and the ground reference node. The tank circuit includes a first capacitance coupled between the first node and the ground reference node, and a second inductance coupled between the first node and the ground reference node. The tank circuit is configured to shunt signal energy at or near a second harmonic frequency, while appearing as an open circuit to signal energy at a fundamental frequency of operation of the RF amplifier.

A transmitter circuit is provided. The transmitter circuit has an input port, a first transmission node, a second transmission node, a third transmission node, and a fourth transmission node and includes a first operational amplifier, a first output stage, a first resistor-capacitor network, a first switch group coupled between the first resistor-capacitor network and the input port, a first impedance matching circuit coupled to the first output stage, the first transmission node, and the second transmission node, a second operational amplifier, a second output stage, a second resistor-capacitor network, a second switch group coupled between the second resistor-capacitor network and the input port, and a second impedance matching circuit coupled to the second output stage, the third transmission node, and the fourth transmission node.

A power amplifier circuit includes an input-stage power amplifier configured to receive a radio-frequency input signal, an output-stage power amplifier configured to output an amplified radio-frequency output signal, and an intermediate-stage power amplifier disposed between the input-stage power amplifier and the output-stage power amplifier. The intermediate-stage power amplifier includes a first transistor, a second transistor, and a capacitor having a first end connected to an emitter of the first transistor and a second end connected to a collector of the second transistor. The intermediate-stage power amplifier receives a signal at a base of the second transistor thereof and outputs an amplified signal from a collector of the first transistor thereof.

An amplifier includes an input matching network; at least one transistor; an input lead coupled to the at least one transistor; a ground terminal coupled to the transistor; an output lead coupled to the at least one transistor; an output matching circuit coupled to the output lead and to the at least one transistor; and a baseband impedance enhancement circuit having at least one reactive element coupled to the input matching network. The baseband impedance enhancement circuit is configured to reduce resonances of a baseband termination.