An amplifier includes a semiconductor die and a substrate that is distinct from the semiconductor die. The semiconductor die includes a III-V semiconductor substrate, a first RF signal input terminal, a first RF signal output terminal, and a transistor (e.g., a GaN FET). The transistor has a control terminal electrically coupled to the first RF signal input terminal, and a current-carrying terminal electrically coupled to the first RF signal output terminal. The substrate includes a second RF signal input terminal, a second RF signal output terminal, circuitry coupled between the second RF signal input terminal and the second RF signal output terminal, and an electrostatic discharge (ESD) protection circuit. The amplifier also includes a connection electrically coupled between the ESD protection circuit and the control terminal of the transistor. The substrate may be another semiconductor die (e.g., with a driver transistor and/or impedance matching circuitry) or an integrated passive device.

In some embodiments, stability in power amplifiers can be achieved under high in-band voltage standing wave ratio condition, with an amplifier circuit that includes an amplifier having a first stage and a second stage, with each stage including an input and an output, such that the output of the first stage is coupled to the input of the second stage. The amplifier circuit further includes a stabilizing circuit implemented on the input side of the second stage and configured to provide stability in operation of the amplifier under a high in-band voltage standing wave ratio condition.

A matching circuit includes first and second ports, an autotransformer, and first and second capacitors. The autotransformer includes a first terminal coupled to a first port, a second terminal coupled to a second port, and a common terminal coupled to a reference potential, and includes a series parasitic inductor and a parallel parasitic inductor. The first capacitor is coupled in shunt to the second terminal, and defines a low pass filter together with the series parasitic inductor. The second capacitor is coupled in series between the first port and the first terminal, and defines a high pass filter together with the parallel parasitic inductor.

An amplifier circuit includes a first amplifier that amplifies a high frequency signal, and a load circuit that changes a load impedance of the first amplifier without being controlled by an external circuit so that a saturation power at a first temperature is higher than a saturation power at a second temperature lower than the first temperature, and an efficiency at the first temperature is lower than an efficiency at the second temperature.

Methods and devices used in mobile receiver front end to support multiple paths and multiple frequency bands are described. The presented devices and methods provide benefits of scalability, frequency band agility, as well as size reduction by using one low noise amplifier per simultaneous outputs. Based on the disclosed teachings, variable gain amplification of multiband signals is also presented.

A harmonic processing circuit includes a first inductor having a first end connected to a connection line connected between an amplifier and an impedance matching circuit, and a second end connected to a first node, a first transmission line having a third end connected to the first node and a fourth end connected to a second node, and a parallel resonant circuit having a fifth end connected to the second node and a sixth end connected to a reference potential, wherein a second inductor and a first capacitor are connected in parallel between the fifth end and the sixth end, wherein when the first inductor is viewed from the connection line, an impedance at a frequency of a fundamental wave amplified by the amplifier is larger than an impedance at a frequency of a second harmonic having twice the frequency of the fundamental wave.

A circuit includes a main amplifier having a first input and a first output. A main bias circuit is coupled to the main amplifier, and the main bias circuit configured to operate the main amplifier in a first frequency band. A feedforward cancellation amplifier has a second input and a second output, in which the second input is coupled to the first input, and the second output is coupled to the first output. A filter is coupled between the first input and the second input. A feedforward bias circuit is coupled to the feedforward cancellation amplifier. The feedforward bias circuit is configured to operate the feedforward cancellation amplifier in a second frequency band within and narrower than the first frequency band.

RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

Disclosed herein are signal amplifiers having a plurality of amplifier cores. Individual amplifier cores can be designed to enhance particular advantages while reducing other disadvantages. The signal amplifier can then switch between amplifier cores in a particular gain mode to achieve desired performance characteristics (e.g., improving noise figure or linearity). Examples of signal amplifiers disclosed herein include amplifier architectures with a low noise figure amplifier core that reduces the noise figure and a linearity boost amplifier core that increases linearity. The disclosed signal amplifiers can switch between a first active core and a second active core for a single or particular gain mode to achieve desired signal characteristics during different time periods.

A device for controlling wireless charging output power based on a PWM integrating circuit includes a magnetic-resonance transmitting module and a magnetic-resonance receiving module. The magnetic-resonance transmitting module includes a wireless charging base, a Bluetooth master circuit, a DC/DC regulator circuit, a PWM integrating circuit, a radio-frequency power amplifier source, a radio-frequency current sampling circuit and a magnetic-resonance transmitting antenna. Both the radio-frequency power amplifier source and the magnetic-resonance transmitting antenna are mounted at the wireless charging base. The magnetic-resonance transmitting antenna is connected to the magnetic-resonance receiving module. The magnetic-resonance receiving module includes a cooling fin, a magnetic-resonance receiving antenna, a Bluetooth slave circuit, a receiving rectifier and regulator circuit and a charging control circuit. The magnetic-resonance receiving antenna, the receiving rectifier and regulator circuit and the charging control circuit are connected successively. The magnetic-resonance receiving antenna is arranged directly above the magnetic-resonance transmitting antenna.