The disclosure relates to an electronic device and a method for wireless communication including a power amplification circuit. According to an embodiment, an electronic device may include: a radio frequency processing module comprising radio frequency circuitry, a first power amplification circuit connected to the radio frequency processing module, a second power amplification circuit connected to the radio frequency processing module and the first power amplification circuit, and a front-end module comprising circuitry connected to the second power amplification circuit and an antenna and configured to transmit a signal, wherein the second power amplification circuit is configured to acquire, from the first power amplification circuit, a first signal obtained by amplifying a signal output from the radio frequency processing module and a second signal by amplifying a signal output from the radio frequency processing module, based on a combination of frequency bands for a first communication scheme and a second communication scheme, and switch at least one of the first signal or the second signal to at least one output port connected to the front-end module, based on a first frequency band of the first signal and a second frequency band of the second signal. Other embodiments are also possible.

Disclosed is an electronic device including a power amplifier (PA) configured to amplify a transmission signal, a matching circuit configured to be connected with the PA and to form a load impedance, a filter configured to be connected with the matching circuit, and a control circuit configured to control a state of at least one of a bias of the PA, the matching circuit, and the filter. The control circuit may identify a network to which the electronic device is connected among a first network and a second network and may operate the matching circuit in one of a first state, a second state, and a third state based on the identified network.

Systems and devices for enabling the use of SIP subsystems to make a configurable system having a unique interconnecting scheme creates appropriate connections between the SIP components and/or subsystems such that desired characteristics and features for the configurable system are provided.

A circuit arrangement is provided which includes an array of stages for photon counting current to voltage conversion. Each stage includes a tunable operational transconductance amplifier and a feedback network forming a feedback loop of the operational transconductance amplifier. Each stage is configured to provide an output signal as a function of an input signal that is provided to the amplifier input of the operational transconductance amplifier, wherein the input signal comprises one or more current pulses and the output signal comprises one or more voltage pulses. With the tunable operational transconductance amplifier the transconductance of a stage can be tuned so that differences in peaking time and gain are avoided. Furthermore, an imaging device and a method for operating a circuit arrangement are provided.

An aspect includes an apparatus including a first amplifier; a first field effect transistor (FET) including a first source coupled to an output of the first amplifier, and a first drain for coupling to a first load; and a first gate drive circuit including an input coupled to the output of the first amplifier and an output coupled to a first gate of the first FET. Another aspect includes a method including amplifying a first audio signal using a first audio amplifier to generate a first voltage; generating a first gate voltage based on the first voltage; applying the first gate voltage to a first gate of a first field effect transistor (FET) coupled between the first audio amplifier and a first audio transducer; and applying the first voltage to a first source of the first FET.

A semiconductor devices comprises a first member including a first circuit partially formed by an elemental semiconductor element at a surface layer, a first conductive raised portion at the first member, and a second member smaller than the first member in plan view joined to the first member. The second member includes a second circuit partially formed by a compound semiconductor element. A second conductive raised portion is at the second member. A power amplifier includes a first-stage amplifier circuit included in the first or second circuit and a second-stage amplifier circuit included in the second circuit. The first circuit includes a first switch for inputting to the first-stage amplifier circuit a radio-frequency signal inputted to a selected contact, a control circuit to control the first- and second-stage amplifier circuits, and a second switch for outputting from a selected contact a radio-frequency signal outputted by the second-stage amplifier circuit.

Chopper amplifiers with low intermodulation distortion (IMD) are provided. To compensate for IMD, at least one distortion compensation channel is included in parallel with chopper amplifier circuitry of a main signal channel. Additionally, output selection switches are included for selecting between the output of the main signal path and the distortional compensation channel(s) over time to maintain the output current continuous. Such IMD compensation can be realized by filling in missing current of the main signal channel using the distortion compensation channel(s), or by using channel outputs only when they have settled current.

Methods, systems, and circuities for selectively connecting an RF signal to front end circuitry and selectively attenuating the RF signal are disclosed. In one example, an interface circuitry includes switching circuitry and attenuator circuitry. The switching circuitry is connected in series between an output of an amplifier and a front end circuitry configured to transmit a radio frequency (RF) signal output by the amplifier. The switching circuitry connects the output of the amplifier to a selected one or more front end circuitry inputs to create one or more signal paths. The attenuator circuitry is connected between the output of the amplifier and ground to create an attenuation path in a shunt configuration relative to the one or more signal paths. The attenuator circuitry is configured to attenuate the RF signal.

A receiver front end (300) having low noise amplifiers (LNAs) is disclosed herein. A cascode having a “common source” configured input FET and a “common gate” configured output FET can be turned on or off using the gate of the output FET. A first switch (235) is provided that allows a connection to be either established or broken between the source terminal of the input FET of each LNA. A drain switch (260) is provided between the drain terminals of input FETs to place the input FETs in parallel. This increases the g.sub.m of the input stage of the amplifier, thus improving the noise figure of the amplifier.

Methods, systems, and devices for differential amplifier schemes for sensing memory cells are described. In one example, a memory apparatus may include a differential amplifier having a first input node configured to be coupled with a memory cell and having an output node configured to be coupled with a sense component. In some examples, the memory apparatus may also include a capacitor having a first node coupled with the first input node, and a first switching component configured to selectively couple a second node of the capacitor with the output node. The differential amplifier may configured such that a current at the output node is proportional to a difference between a voltage at the first input node of the differential amplifier and a voltage at the second input node of the differential amplifier.