A strain sensor is based on a self-biasing reference circuit that reaches an operating state that, at least at first order, is at least supply-voltage independent. The strain sensor provides an output signal that is defined by the operating state of the self-biasing reference circuit. At least one component in the self-biasing reference circuit has an electrical characteristic that depends on a strain to which the at least one component is subjected. This makes that the operating state of the self-biasing reference circuit depends on the strain. As a result, the output signal of the strain sensor varies as a function of the strain to which the at least one component is subjected.

A high-speed transimpedance amplifier with bandwidth extension feature over full temperature range and bandwidth extension method belong to the field of integrated circuit. The present invention solves the problem existed in boosting core amplifier bandwidth technology over full temperature range. The present invention includes a preamplifier TIA, a phase splitting stage PS, a pre-driver stage Pre-Drive, an output buffer BUFF and an offset cancelation circuit OC. The preamplifier TIA adopts the gate-drain voltage cancelation technology to expand the bandwidth, so that its −3 dB bandwidth is greater than twice the closed-loop bandwidth of the first-order TIA. The pre-driver stage Pre-Drive is used to drive the output buffer BUFF. By adjusting the source-level negative feedback capacitance value of the pre-driver stage Pre-Drive circuit to generate a high-frequency gain that varies with temperature, the preamplifier TIA bandwidth differences under different temperature conditions are compensated.

Disclosed is a temperature compensation circuit including: a first current path to perform temperature compensation on a second transistor in a first temperature range; and a second current path having a diode which goes to an on state in a second temperature range higher than the first temperature range, to perform temperature compensation on the second transistor by means of a current flowing through the diode in the on state.

A high-speed transimpedance amplifier with bandwidth extension feature over full temperature range and bandwidth extension method belong to the field of integrated circuit. The present invention solves the problem existed in boosting core amplifier bandwidth technology over full temperature range. The present invention includes a preamplifier TIA, a phase splitting stage PS, a pre-driver stage Pre-Drive, an output buffer BUFF and an offset cancelation circuit OC. The preamplifier TIA adopts the gate-drain voltage cancelation technology to expand the bandwidth, so that its −3 dB bandwidth is greater than twice the closed-loop bandwidth of the first-order TIA. The pre-driver stage Pre-Drive is used to drive the output buffer BUFF. By adjusting the source-level negative feedback capacitance value of the pre-driver stage Pre-Drive circuit to generate a high-frequency gain that varies with temperature, the preamplifier TIA bandwidth differences under different temperature conditions are compensated.

An amplifier circuit 1001 with a variable temperature coefficient of a gain is an amplifier circuit with a variable temperature coefficient of a gain in which a variable resistor VR is connected between a first signal and a second signal having temperature coefficients of an amplification factor different from each other, a variable output of the variable resistor VR is connected to an input of a buffer amplifier Ub, and an output of the buffer amplifier Ub is used as an output Vo, wherein the first signal is an output of a first temperature coefficient circuit 100, and the second signal is an output of another amplifier circuit 501.

Disclosed is an integrated circuit amplifier having a power transistor with a signal/bias input terminal, a first high current terminal, and a second high current terminal, and thermal protection circuitry with a sensor transistor having a sensor control terminal, a sensor output terminal, and a sensor current terminal coupled to a fixed voltage node. Sensor bias circuitry includes a sensor bias terminal coupled to the sensor control terminal, wherein the sensor bias circuitry is configured to generate a temperature set point at which a sensor output voltage at the sensor output terminal drops at least 50% when the temperature of the sensor transistor is above the temperature set point. Shutdown circuitry coupled between the sensor output terminal and the signal/bias input terminal is configured to reduce a bias signal at the signal/bias terminal in response to the at least 50% drop in sensor output voltage.

A circuit for biasing a transistor is provided. The circuit includes an output terminal configured to be coupled to a gate terminal of the transistor and circuitry. In a first state, the circuitry is configured to output a control signal at a first voltage level for setting the transistor to a first transistor state. In a second state, the circuitry is configured to first output the control signal at a second voltage level different from the first voltage level following by changing the control signal from the second voltage level towards a third voltage level different from the first and second voltage level over time.

An integrated cinema amplifier comprises a power supply stage that distributes power over a plurality of channels for rendering immersive audio content in a surround sound listening environment. The amplifier automatically detects maximum and net power availability and requirements based on audio content by decoding audio metadata and dynamically adjusts gains to each channel or sets of channels based on content and operational/environmental conditions. A power supply stage provides power to drive a plurality of channels corresponding to speaker feeds to a plurality of speakers. The amplifier has a front panel having an LED array with each LED associated with a respective channel or group of channels of the multi-channel amplifier, and a control unit configured to light the LEDs according to display patterns based on operating status or error conditions of the amplifier.

Solder bumps are placed in direct contact with the silicon substrate of an amplifier integrated circuit having a flip chip configuration. A plurality of amplifier transistor arrays generate waste heat that promotes thermal run away of the amplifier if not directed out of the integrated circuit. The waste heat flows through the thermally conductive silicon substrate and out the solder bump to a heat-sinking plane of an interposer connected to the amplifier integrated circuit via the solder bumps.

Radio frequency (RF) power amplifier architectures and circuits providing compensated current and gain from turn-on to end of long signal burst intervals to counteract amplifier transistor thermal rise due to self-heating at turn-on. The RF receiver circuit may be implemented as one of a single chip device or as part of an integrated system of components for use in mobile communication systems.