Provided is a power amplification circuit that includes: an amplifier that amplifies an input signal and outputs an amplified signal; a first bias circuit that supplies a first bias current or voltage to the amplifier; a second bias circuit that supplies a second bias current or voltage to the amplifier; a first control circuit that controls the first bias current or voltage; and a second control circuit that controls the second bias current or voltage. The current supplying capacity of the first bias circuit is different from the current supplying capacity of the second bias circuit.

Bias arrangements for amplifiers are disclosed. An example bias arrangement for an amplifier includes a bias circuit, configured to produce a bias signal for the amplifier; a linearization circuit, configured to improve linearity of the amplifier by modifying the bias signal produced by the bias circuit to produce a modified bias signal to be provided to the amplifier; and a coupling circuit, configured to couple the bias circuit and the linearization circuit. Providing separate bias and linearization circuits coupled to one another by a coupling circuit allows separating a linearization operation from a biasing loop to overcome some drawbacks of prior art bias arrangements that utilize a single biasing loop.

A low-noise amplifier is provided. The low-noise amplifier includes a first transistor configured to amplify an input signal; a second transistor which forms a cascade structure with the first transistor and configured to amplify an output signal of the first transistor; and a third transistor which forms a cascode structure together with the first transistor and configured to amplify the output signal of the first transistor, wherein a first signal including a sum of the output signal of the second transistor and the output signal of the third transistor is output to an output terminal.

A power amplifier arrangement comprises a power amplifier comprising at least one transistor having a first gate and a second gate. The first gate is configured to receive a radio frequency input signal superimposed with a first control signal, and the second gate is configured to receive a second control signal. The first control signal is a linearization signal varying in relation to an envelope of the input signal and the second control signal is a temperature compensation signal varying in relation to a temperature of the power amplifier, or vice versa.

Certain aspects of the present disclosure provide methods and apparatus for implementing an amplification system. The amplification system includes an amplifier comprising differential inputs and an output. The differential inputs include an inverting input and a non-inverting input. The amplification system further includes a feedback path from the output coupled to the inverting input. The feedback path from the output is coupled to at least one of an inverting amplifier or buffer, and the at least one of the inverting amplifier or buffer is further coupled to the non-inverting input.

Gain is suppressed. In a power amplification circuit, a first transistor has a first input terminal, a first output terminal, and a first ground terminal. A second transistor has a second input terminal, a second output terminal, and a second ground terminal. The second input terminal is connected to the first input terminal. The second output terminal is connected to the first output terminal. A first bias circuit is connected to the first input terminal. A second bias circuit is connected to the second input terminal. A first resistor is connected between the first ground terminal and the ground. A second resistor is connected between the second ground terminal and the ground. The second resistor has a resistance value greater than that of the first resistor.

A wideband amplifier includes a first stage and a second stage. The first stage includes a transconductance transistor driven by an input signal through an input transformer. The transconductance transistor couples to a cascode transistor forming an output node for the first stage. The second stage couples the output node from the first stage through an output transformer to drive an output transistor.

A cascode structure, an output structure, an amplifier and a driving circuit are provided. A bias voltage of a common-gate structure in the cascode structure is provided by the cascode structure, bias voltages of transistors in the output structure are all provided by the output structure, the amplifier includes the cascode structure and/or the output structure described above, the driving circuit includes the amplifier described above.

A low-noise amplifier device includes an inductive input element, an amplifier circuit, an inductive output element and an inductive degeneration element. The amplifier device is formed in and on a semiconductor substrate. The semiconductor substrate supports metallization levels of a back end of line structure. The metal lines of the inductive input element, inductive output element and inductive degeneration element are formed within one or more of the metallization levels. The inductive input element has a spiral shape and the an amplifier circuit, an inductive output element and an inductive degeneration element are located within the spiral shape.

A motion sensor device comprises: a reverse electrowetting-on-dielectric (REWOD) generator configured to generate alternating current (AC) based on motion; a motion sensor configured to measure motion data; and a wireless motion sensor read-out circuit coupled to the REWOD generator and the motion sensor, the wireless motion sensor read-out circuit configured to transmit the motion data and operate on the AC from the REWOD generator.