A pulse shaping device includes an inductor that is selectively output-coupled to a first port of a capacitor. The inductor is charged to a selected current throughput and then coupled to the first port to generate a first characteristic within the current flowing at a second port of the capacitor. The capacitor is charged until reaching a clamping voltage at the first port. A voltage clamp of the shaping device clamps the first port of the capacitor at the clamping voltage to generate a second characteristic within the current flowing at a second port of the capacitor.

Disclosed is a resonant circuit and method for matched clock and data timing performance for improving timing closure of digital circuits on advanced semiconductor manufacturing processes. The matched resonance circuit comprises pulse generator circuit (202) and plurality of generating latches (206A-N) and plurality of sampling latches (304A-N). The pulse generator circuit (202) comprises plurality of inverters (210A-N), optimum resistance (214) and exclusive OR (Ex-OR) gate (218) which are connected in series and a matched capacitance. The pulse generator circuit (202) generates timing pulse output using one or more buffers and clock inductor. Each generating latch receives clock timing pulse output as timing pulse into plurality of sampling flip-flop latches (304A-N) through clock sample path (CS) to match arrival of timing pulse and outputs of plurality of input data lines that are resonated by connecting one or more of respective load capacitances with at least one shared inductor (208).

In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. in some embodiments, an RE circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

In some method and apparatus embodiments, an RF circuit comprises a switch transistor having a source, a drain, a gate, and a body. A gate control voltage is applied to the gate of the switch transistor. A body control voltage is applied to the body of the switch transistor. The body control voltage is a positive bias voltage when the switch transistor is in an on state. in some embodiments, an RE circuit comprises a control voltage applied to the gate of the switch transistor through a first resistance and applied to the body of the switch transistor through a second resistance. The first resistance is different from the second resistance.

A transistor circuit includes a transistor having a gate terminal and first and second conduction terminals, a first circuit configured to convert an AC input signal of the transistor circuit to a gate bias voltage and to apply the gate bias voltage to the gate terminal of the transistor, a second circuit configured to convert the AC input signal of the transistor circuit to a control voltage, and a switching circuit configured to apply a first voltage to the first conduction terminal of the transistor in response to the control voltage.

An input/output (I/O) circuit may be provided. The I/O circuit may include an input control circuit and an output control circuit. The input control circuit may be configured to apply a stress to a transmission path based on an input signal while in a test mode and buffer the input signal using a drivability changed by the stress applied to the transmission path to generate first and second transmission signals while in a normal mode after the test mode. The output control circuit may be configured to drive and output an output signal according to the first and second transmission signals based on a test mode signal.

An input/output (I/O) circuit may be provided. The I/O circuit may include an input control circuit and an output control circuit. The input control circuit may be configured to apply a stress to a transmission path based on an input signal while in a test mode and buffer the input signal using a drivability changed by the stress applied to the transmission path to generate first and second transmission signals while in a normal mode after the test mode. The output control circuit may be configured to drive and output an output signal according to the first and second transmission signals based on a test mode signal.

A semiconductor standard cell of a flip-flop circuit includes semiconductor fins extending substantially parallel to each other along a first direction, electrically conductive wirings disposed on a first level and extending substantially parallel to each other along the first direction, and gate electrode layers extending substantially parallel to a second direction substantially perpendicular to the first direction and formed on a second level different from the first level. The flip-flop circuit includes transistors made of the semiconductor fins and the gate electrode layers, receives a data input signal, stores the data input signal, and outputs a data output signal indicative of the stored data in response to a clock signal, the clock signal is the only clock signal received by the semiconductor standard cell, and the data input signal, the clock signal, and the data output signal are transmitted among the transistors through at least the electrically conductive wirings.

A semiconductor standard cell of a flip-flop circuit includes semiconductor fins extending substantially parallel to each other along a first direction, electrically conductive wirings disposed on a first level and extending substantially parallel to each other along the first direction, and gate electrode layers extending substantially parallel to a second direction substantially perpendicular to the first direction and formed on a second level different from the first level. The flip-flop circuit includes transistors made of the semiconductor fins and the gate electrode layers, receives a data input signal, stores the data input signal, and outputs a data output signal indicative of the stored data in response to a clock signal, the clock signal is the only clock signal received by the semiconductor standard cell, and the data input signal, the clock signal, and the data output signal are transmitted among the transistors through at least the electrically conductive wirings.

Provided is a gate drive circuit and a gate drive system, with which current unevenness among power devices connected in parallel can be reduced more. A gate drive circuit includes: an objective waveform generation unit configured to generate an objective waveform; a drive waveform generation unit configured to generate a drive waveform from the objective waveform, by referring to on-timing set information and off-timing set information; a drive control unit configured to drive the power device to turn the power device on/off, based on the drive waveform; a state detection unit configured to detect the state of the power device; a predicted waveform generation unit configured to generate a predicted waveform of a voltage; and an update unit configured to update the on-timing set information and the off-timing set information, based on the result of the state detection and the result of comparison to the predicted waveform.