Patent classifications
H03K3/02
Switching of paralleled reverse conducting IGBT and wide bandgap switch
A semiconductor module comprises reverse conducting IGBT connected in parallel with a wide bandgap MOSFET, wherein each of the reverse conducting IGBT and the wide bandgap MOSFET comprises an internal anti-parallel diode. A method for operating a semiconductor module with the method including the steps of: determining a reverse conduction start time, in which the semiconductor module starts to conduct a current in a reverse direction, which reverse direction is a conducting direction of the internal anti-parallel diodes; applying a positive gate signal to the wide bandgap MOSFET after the reverse conduction start time; determining a reverse conduction end time based on the reverse conduction start time, in which the semiconductor module ends to conduct a current in the reverse direction; and applying a reduced gate signal to the wide bandgap MOSFET a blanking time interval before the reverse conduction end time, the reduced gate signal being adapted for switching the wide bandgap MOSFET into a blocking state.
METHOD AND APPARATUS FOR IMPLEMENTING DRIVE SIGNAL FOR DRIVING RESOLVER SENSOR
A method and apparatus for generating a drive signal for driving a resolver sensor are provided. The method and apparatus implement a drive signal to be input to a resolver sensor. The method and apparatus perform counting in association with an incoming square wave signal and implement a drive signal after confirming that a specific point corresponding to a preset condition of the incoming square wave signal arrives.
METHOD AND APPARATUS FOR IMPLEMENTING DRIVE SIGNAL FOR DRIVING RESOLVER SENSOR
A method and apparatus for generating a drive signal for driving a resolver sensor are provided. The method and apparatus implement a drive signal to be input to a resolver sensor. The method and apparatus perform counting in association with an incoming square wave signal and implement a drive signal after confirming that a specific point corresponding to a preset condition of the incoming square wave signal arrives.
Semiconductor apparatus
A semiconductor apparatus includes a data input and output (input/output) circuit configured to operate by receiving a first voltage, a core circuit configured operate by receiving a second voltage, and a control circuit configured to output a power control signal for activating the data input/output circuit when the first voltage is higher than a first set voltage and the second voltage is higher a second set voltage.
Crystal oscillator
Provided is a crystal oscillator, including: a crystal; an oscillating circuit including a first oscillating transistor and a second oscillating transistor, where the first oscillating transistor and the second oscillating transistor are configured to provide transconductance for starting oscillation and maintaining oscillation of the crystal; a first driving circuit configured to generate a stable reference current; and a second driving circuit, configured to supply an operating voltage to the oscillating circuit and make an operating current of the first oscillating transistor and the second oscillating transistor be a stable current according to the reference current, where the operating voltage is used to control the first oscillating transistor and the second oscillating transistor to operate in a sub-threshold region.
Crystal oscillator
Provided is a crystal oscillator, including: a crystal; an oscillating circuit including a first oscillating transistor and a second oscillating transistor, where the first oscillating transistor and the second oscillating transistor are configured to provide transconductance for starting oscillation and maintaining oscillation of the crystal; a first driving circuit configured to generate a stable reference current; and a second driving circuit, configured to supply an operating voltage to the oscillating circuit and make an operating current of the first oscillating transistor and the second oscillating transistor be a stable current according to the reference current, where the operating voltage is used to control the first oscillating transistor and the second oscillating transistor to operate in a sub-threshold region.
Apparatus for generating high pulse voltage
Apparatus for generating high pulse voltage comprises a high DC voltage source, a low DC voltage source, an inductive load, two controllable gates, a controllable switch and, connected in series, a capacitor, a booster diode and an additional controllable switch, as well as a controllable pulse duration converter for pulses from a rectangular pulse generator. The preceding connection of the booster diode anode with the negative terminal of the low DC voltage source ensured by the pulse duration converter and second controllable switch correlates the booster diode switching time with the moment of closing the both controllable gates. Thus, the pulse noise present in the prior art designs is eliminated, and the level of interference emitted into the surroundings is decreased.
Apparatus for generating high pulse voltage
Apparatus for generating high pulse voltage comprises a high DC voltage source, a low DC voltage source, an inductive load, two controllable gates, a controllable switch and, connected in series, a capacitor, a booster diode and an additional controllable switch, as well as a controllable pulse duration converter for pulses from a rectangular pulse generator. The preceding connection of the booster diode anode with the negative terminal of the low DC voltage source ensured by the pulse duration converter and second controllable switch correlates the booster diode switching time with the moment of closing the both controllable gates. Thus, the pulse noise present in the prior art designs is eliminated, and the level of interference emitted into the surroundings is decreased.
PULSE VOLTAGE GENERATION DEVICE, METHOD, AND CONTROLLER
The present application discloses a pulse voltage generation device, method and controller, the device comprises: a transformer; a first AC/DC conversion circuit, with an alternating current side connected with a high-voltage side of the transformer; an energy storage capacitor, connected with a direct current side of the a first AC/DC conversion circuit, for storing electrical energy; and a discharge control circuit, in parallel connection with both ends of the energy storage capacitor, for controlling discharge of the energy storage capacitor to generate a high-voltage pulse. In the present application, an energy storage capacitor is arranged on a high-voltage side of the transformer, and a discharge control circuit is used to control the energy storage capacitor to discharge to generate a high-voltage pulse, avoiding the problem that frequency of the high-voltage pulse outputted on the high-voltage side is limited by variations of the induced magnetic field of the transformer, and is thus difficult to increase, and that the rising edge and falling edge of the high-voltage pulse take a long time.
PULSE VOLTAGE GENERATION DEVICE, METHOD, AND CONTROLLER
The present application discloses a pulse voltage generation device, method and controller, the device comprises: a transformer; a first AC/DC conversion circuit, with an alternating current side connected with a high-voltage side of the transformer; an energy storage capacitor, connected with a direct current side of the a first AC/DC conversion circuit, for storing electrical energy; and a discharge control circuit, in parallel connection with both ends of the energy storage capacitor, for controlling discharge of the energy storage capacitor to generate a high-voltage pulse. In the present application, an energy storage capacitor is arranged on a high-voltage side of the transformer, and a discharge control circuit is used to control the energy storage capacitor to discharge to generate a high-voltage pulse, avoiding the problem that frequency of the high-voltage pulse outputted on the high-voltage side is limited by variations of the induced magnetic field of the transformer, and is thus difficult to increase, and that the rising edge and falling edge of the high-voltage pulse take a long time.