The invention relates to a topological semiconductor switch for power electronics that has at least two power semiconductors, in particular power transistors, characterized in that the topological semiconductor switch has at least one first power semiconductor containing a first semiconductor material, and at least one second power semiconductor containing a second semiconductor material. The invention also relates to a motor vehicle.

Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.

A multi-sense circuit includes a transistor circuit having sense nodes and a gate node, a peak detector having inputs coupled to the sense nodes of the transistor circuit and an output, and a control circuit having a gate control node coupled to the gate node of the transistor circuit and an overcurrent protection node coupled to the output of the peak detector.

A method includes simultaneously controlling several transistors by a first signal and separately controlling the transistors by distinct second pulsed signals.

A method for selecting a power source for a load is provided. The method includes monitoring the primary power source, when the primary power source is providing power to the load, determining if a condition of the primary power source crosses a first threshold, when the condition crosses the first threshold, turning on a first power field effect transistor to couple a back-up power source to the load through a second power field effect transistor, when the primary power source is not providing power to the load, determining if a condition of the primary power source crosses a second threshold, and when the condition crosses the second threshold, switching off the first power field effect transistor to couple the primary power source to the load through a third power field effect transistor.

A method for selecting a power source for a load is provided. The method includes monitoring the primary power source, when the primary power source is providing power to the load, determining if a condition of the primary power source crosses a first threshold, when the condition crosses the first threshold, turning on a first power field effect transistor to couple a back-up power source to the load through a second power field effect transistor, when the primary power source is not providing power to the load, determining if a condition of the primary power source crosses a second threshold, and when the condition crosses the second threshold, switching off the first power field effect transistor to couple the primary power source to the load through a third power field effect transistor.

A solid state circuit breaker assembly includes a transistor, a transient voltage suppression device, and a circuit board. The transistor and/or the transient voltage suppression device may be electrically connected to the circuit board. The solid state circuit breaker module may be configured to be connected to one or more non-scalable modules to regulate current. The solid state circuit breaker module may be configured to receive one or more scalable modules. The transistor and/or the transient voltage suppression device may be disposed on the circuit board in a substantially symmetrical configuration.

A switching device 1 includes a SiC semiconductor chip 11 which has a gate pad 14, a source pad 13 and a drain pad 12 and in which on-off control is performed between the source and the drain by applying a drive voltage between the gate and the source in a state where a potential difference is applied between the source and the drain, a sense source terminal 4 electrically connected to the source pad 13 for applying the drive voltage, and an external resistance (source wire 16) that is interposed in a current path between the sense source terminal 4 and the source pad 13, is separated from sense source terminal 4, and has a predetermined size.

A pulse modulator comprises a solid state power switch having a source, a drain, a gate and a separate gate drive connected to ground. One pulse modulator comprises a plurality of stages connected as an induction adder. Each stage includes a plurality of cells and at least some of the cells each include a solid state power switch having a source, a drain, a gate and a separate gate drive connected to ground to control the discharge of a capacitor. In one embodiment the solid state power switch is a power MOSFET.

A circuit includes an electronic component package that comprises a first lead, a second lead, and a third lead; and a III-N transistor encased in the electronic component package, the III-N transistor including a drain, a gate, and a source, where the source is coupled to the first lead, the gate is coupled to the second lead, and the drain is coupled to the third lead. The circuit includes a high voltage node and a resistor, the resistor having a first terminal coupled to the high voltage node and a second terminal coupled to the third lead. The circuit further includes a ferrite bead connected in parallel to the resistor and coupled between the third lead and the high voltage node. When switching, the deleterious effects of a parasitic inductance of the circuit's power loop are mitigated by the ferrite bead and the resistor.