A DC switching device has at least one switching unit which is arranged between two terminals. Further, the DC switching device has a control unit for controlling the at least one switching unit. The switching unit has a first and a second semiconductor switching element, which are arranged in parallel with one another, the first switching element being a high-voltage switching element and the second switching element being a low-power-loss switching element. The switching unit is controllable by the control unit in such a way that, when the switching unit is switched off, initially the second switching element is switched to be non-conductive, and subsequently the first switching unit is switched to be non-conductive, and when the switching unit is switched on, initially the first switching element is switched to be conductive and subsequently the second switching element is switched to be conductive.

Disclosed herein are switching or other active FET configurations that implement a branch design with one or more interior FETs of a main path coupled in parallel with one or more auxiliary FETs of an auxiliary path. Such designs include a circuit assembly for performing a switching function that includes a branch with a plurality of auxiliary FETs coupled in series and a main FET coupled in parallel with an interior FET of the plurality of auxiliary FETs. The body nodes of the FETs can be interconnected and/or connected to a body bias network. The body nodes of the FETs can be connected to body bias networks to enable individual body bias voltages to be used for individual or groups of FETs.

Systems, apparatuses, and methods for efficient operation of a switch arrangement are described. Selectively operating one of a plurality of parallel-connected switches at different times along a period of a periodic waveform may allow for improved efficiency, uniform loss-spreading, and enhanced thermal design of an electronic circuit including use of power switches.

Systems, apparatuses, and methods for efficient operation of a switch arrangement are described. Selectively operating one of a plurality of parallel-connected switches at different times along a period of a periodic waveform may allow for improved efficiency, uniform loss-spreading, and enhanced thermal design of an electronic circuit including use of power switches.

A method for operating a silicon carbide (SiC) MOSFET arrangement, The arrangement includes two or more SiC MOSFETs, which are set up such that they are connected electrically in parallel with one another, and is arranged in a device. The method comprises the step of switching on the SiC MOSFETs while avoiding overloading individual ones of the SiC MOSFETs. A device is also described which includes a SiC MOSFET arrangement that includes two or more SiC MOSFETs, which are set up such that they are connected electrically in parallel with one another, and a switch unit that is set up for switching the SiC MOSFET arrangement. The switch unit is set up for switching on the SiC MOSFETs while avoiding overloading individual ones of the SiC MOSFETs.

A method for controlling a circuit control system. Currents are sensed at outputs of transistors in the circuit control system. Levels are identified for the currents. A number of characteristics of the transistors are controlled while the currents flow out of the transistors such that the currents flowing out of the transistors have desired levels.

A method for controlling a circuit control system. Currents are sensed at outputs of transistors in the circuit control system. Levels are identified for the currents. A number of characteristics of the transistors are controlled while the currents flow out of the transistors such that the currents flowing out of the transistors have desired levels.

An electronic circuit includes: a bus bar connected to a power source having a positive terminal and a negative terminal; and a plurality of object switching elements as driving objects connected to the bus bar, the object switching elements forming a parallel connected circuit. The object switching elements include minimum on-resistance elements having minimum on-resistance compared to other object switching elements in a corresponding current region among mutually different current regions; and connection points between the minimum on-resistance elements and the bus bar are located at different locations to have mutually different inductance of respective conduction paths between the power source to the connection points located at the different locations.

Provided is an electronic circuit capable of preventing a switching device from breakage when a short-circuit occurs. When a gate control signal CG1 is inverted from an L level to an H level, a first switching circuit 32 selects a first input terminal a, and connects an output terminal d to the first input terminal a, whereby turning on a MOSFET 21. When a predetermined time Tx elapses after the output terminal d of the first switching circuit 32 is connected to the first input terminal a, a second switching circuit 34 selects a first input terminal e, and connects an output terminal g to the first input terminal e. Furthermore, immediately after the connection, the first switching circuit 32 selects a second input terminal b, and connects the output terminal d to the second input terminal b. Consequently, immediately after the MOSFET 21 is turned on, a gate resistor is switched from a first gate resistor 33 having a small resistance value to a second gate resistor 35 having a large resistance value.

A semiconductor control device includes a switching element including a main element, and a sense element connected in parallel with the main element; and a control circuit configured to bias a sense electrode of the sense element by a negative voltage, and to detect a leakage current of another switching element connected in series with the main element. The control circuit biases the sense electrode by the negative voltage, for example, so as to turn on the sense element, without turning on the main element.