A circuit is configured to drive a switch mode regulator and to control the slew rate at a switching terminal of the regulator. The circuit includes first and second transistors coupled between a voltage supply terminal and a switching terminal, and includes third and fourth transistors coupled between the voltage supply terminal and the switching terminal. The circuit includes a fifth transistor coupled to the fourth transistor in a current mirror configuration and a sixth transistor coupled between the voltage supply terminal and the third transistor. The circuit includes a first resistor coupled between the voltage supply terminal and the fifth transistor, and includes a second resistor coupled between the sixth transistor and the second transistor.

A circuit is configured to drive a switch mode regulator and to control the slew rate at a switching terminal of the regulator. The circuit includes first and second transistors coupled between a voltage supply terminal and a switching terminal, and includes third and fourth transistors coupled between the voltage supply terminal and the switching terminal. The circuit includes a fifth transistor coupled to the fourth transistor in a current mirror configuration and a sixth transistor coupled between the voltage supply terminal and the third transistor. The circuit includes a first resistor coupled between the voltage supply terminal and the fifth transistor, and includes a second resistor coupled between the sixth transistor and the second transistor.

A gatedriver circuit for controlling a power electronic switch. The circuit provides a galvanic separation and is magnetically immune. The gatedriver circuit comprises a transformer arranged with two separate cores of magnetically conductive material each forming a closed loop. A first electrical conductor has windings around a part of both cores, and a second electrical conductor also has windings around part of both cores. The two cores are positioned close to each other to allow mutual magnetic interaction. The windings of the first and second electrical conductors around the first core have the same winding direction, and the windings of the first and second electrical conductors around the second core have opposite winding direction of the windings of the first and second electrical conductors around the first core, so as to counteract electric influence induced by a common magnetic field through the closed loops of the first and second cores. Hereby, such gatedriver circuit is suitable for controlling power switches in environments with strong magnetic fields, e.g. inside a high power wind turbine.

The invention relates to an electrical circuit (1) for transmitting a useful analogue signal, which has a signal transmission path (16) with an input path (2) and an output path (3) and at least one switch (6), with which the useful signal which is carried on the input path (2) can be connected through to the output path (3) or the signal transmission path (16) can be interrupted. According to the invention, a compensation circuit (4) which substantially compensates for a distortion of the useful analogue useful signal generated by the at least one switch (6) when it is switched off (OFF) is provided, wherein the compensation circuit (4) is connected to a control terminal (G) of the at least one switch (6) and comprises at least one non-linear capacitance.

An active gate voltage control circuit for a gate driver of a power semiconductor switching device comprising a power semiconductor transistor, such as a GaN HEMT, provides active gate voltage control comprising current burst mode operation and protection mode operation. The gate-source turn-on voltage V.sub.gs(on) is increased in burst mode operation, to allow for a temporary increase of saturation current. In protection mode operation, a multi-stage turn-off may be implemented, comprising reducing V.sub.gs(on) to implement fast soft turn-off, followed by full turn-off to bring V.sub.gs(on) below threshold voltage, to reduce switching transients such as V.sub.ds spikes. Circuits of example embodiments provide for burst mode operation for enhanced saturation current, to increase robustness of enhancement mode GaN power switching devices, e.g. under overcurrent and short circuit conditions, or to provide active gate voltage control which adjusts dynamically to specific operating conditions or events.

Disclosed is an circuit for preventing latch-up, comprising a first transistor, a second transistor of a type opposite to that of the first transistor, and a control circuit, wherein a control terminal of the first transistor receives a first control voltage and a first terminal of the first transistor receives a first supply voltage; a control terminal of the second transistor receives a second control voltage, and is connected to a second terminal of the first transistor; a first terminal of the second transistor is connected to the control terminal of the first transistor, and a second terminal of the second transistor receives a second supply voltage. The control circuit is coupled on a path formed by the first transistor and the second transistor between the first supply voltage and the second supply voltage for disconnecting the path when the first control voltage and/or the second control voltage is out of a predetermined range. The circuit for preventing latch-up provided by the present invention, by introducing the control circuit on the path formed by the first transistor and the second transistor between the first supply voltage and the second supply voltage, can disconnect the path when the first control voltage and/or the second control voltage is out of the predetermined range, so that a latch-up effect is prevented from occurring during power-on phase.

Disclosed is an circuit for preventing latch-up, comprising a first transistor, a second transistor of a type opposite to that of the first transistor, and a control circuit, wherein a control terminal of the first transistor receives a first control voltage and a first terminal of the first transistor receives a first supply voltage; a control terminal of the second transistor receives a second control voltage, and is connected to a second terminal of the first transistor; a first terminal of the second transistor is connected to the control terminal of the first transistor, and a second terminal of the second transistor receives a second supply voltage. The control circuit is coupled on a path formed by the first transistor and the second transistor between the first supply voltage and the second supply voltage for disconnecting the path when the first control voltage and/or the second control voltage is out of a predetermined range. The circuit for preventing latch-up provided by the present invention, by introducing the control circuit on the path formed by the first transistor and the second transistor between the first supply voltage and the second supply voltage, can disconnect the path when the first control voltage and/or the second control voltage is out of the predetermined range, so that a latch-up effect is prevented from occurring during power-on phase.

Switch circuitry is disclosed having a series stack of transistors coupled between first and second port terminals. A string of gate resistors having a common gate terminal is coupled to gates of the series stack of transistors. A bias control transistor has a bias control terminal and first and second current terminals. The second control terminal is coupled to a switch control terminal configured to receive on-state and off-state control voltages that transition the series stack of transistors between passing a radio frequency signal and blocking the radio frequency signal from passing between the first and second port terminals, respectively. A string of diodes is coupled between the common gate terminal and the first current terminal, and a common gate resistor is coupled between the common gate terminal and the switch control terminal. The diodes contribute to actively generating additional negative gate bias as RF power level increases.

A method for operating a gate driver system includes measuring a first parameter according to a first priority schedule synchronously to a first edge of a switching signal generated by a gate driver integrated circuit and having a variable duty cycle. The method includes after measuring the first parameter of the gate driver system and prior to a second edge of the switching signal, measuring at least a second parameter of the gate driver system according to a first round-robin schedule synchronously to the first edge of the switching signal.

An RF signal switch circuit that allows connection of any of N radio frequency (RF) input terminals to a switch output port, either in a low loss mode, in a bypass mode, or, optionally, in a signal function mode. Embodiments of the invention allow for both a single switch in the series input path to a target circuit while still having the ability to isolate the bypass path from the target circuit. In the low loss and bypass mode, the circuit simultaneously exhibits low input insertion loss (and thus a low noise factor) and high bypass mode isolation.