A switching system can include a main switching device configured to switch a voltage, a gate driver having an output coupled to a drive terminal of the main switching device and configured to deliver a drive signal to the main switching device, and a clamp circuit. The clamp circuit can be coupled to the drive terminal of the main switching device. The clamp circuit can include a logic gate configured to drive a clamp switching device coupled to and configured to clamp a voltage at the drive terminal of the main switching device. A drive signal of the clamp switching device can be substantially complementary to the main switching device drive signal. The logic gate can provide at least a portion of a delay between switching transitions of the main switching device and switching transitions of the clamp switching device.

The present application relates to an isolated drive circuit, of the type commonly employed as high side drivers, for providing a drive signal to a semiconductor switch. The isolated drive circuit comprises a transformer with primary and secondary windings. The circuit further comprises a primary side circuit having a plurality of switches arranged in a bridge configuration with the primary winding positioned across the output of the bridge and a secondary side circuit connected to the secondary winding of the transformer and having a drive circuit output for providing a drive signal to the semiconductor switch. The advantage of this approach is that the entire circuit can be constructed as a module for use as a single component on a circuit board without requiring additional external components.

A switching system can include a main switching device configured to switch a voltage, a gate driver having an output coupled to a drive terminal of the main switching device and configured to deliver a drive signal to the main switching device, and a clamp circuit. The clamp circuit can be coupled to the drive terminal of the main switching device. The clamp circuit can include a logic gate configured to drive a clamp switching device coupled to and configured to clamp a voltage at the drive terminal of the main switching device. A drive signal of the clamp switching device can be substantially complementary to the main switching device drive signal. The logic gate can provide at least a portion of a delay between switching transitions of the main switching device and switching transitions of the clamp switching device.

A semiconductor integrated circuit includes first to fourth transistor arrangement regions. A portion of the third transistor arrangement region is located on a second side in a first direction of the second transistor arrangement region. A portion of the first transistor arrangement region connected to the second transistor arrangement region is sandwiched in the first direction by the second transistor arrangement region and the portion of the third transistor arrangement region. The portion of the first transistor arrangement region is located on a first side in the first direction of the fourth transistor arrangement region. The portion of the third transistor arrangement region connected to the fourth transistor arrangement region is sandwiched in the first direction by the fourth transistor arrangement region and the portion of the first transistor arrangement region.

Provided are a semiconductor device and a method of operating the same. A semiconductor device may include a comparator which compares a first voltage with a rectified voltage and provides a second voltage in accordance with the comparison. A timer circuit may operate a timer according to the second voltage and output a third voltage in correspondence with an operation time of the timer. A driver may drive a transistor with a fourth voltage generated by the driver according to the third voltage. A calibration circuit may generate a timer calibration signal based on the second voltage and the fourth voltage. The timer calibration signal may be provided to the timer circuit and used to calibrate the operation time of the timer. More efficient rectification, with reduced occurrence of reverse current, may thereby be realized.

A semiconductor integrated circuit includes first to fourth transistor arrangement regions. A portion of the third transistor arrangement region is located on a second side in a first direction of the second transistor arrangement region. A portion of the first transistor arrangement region connected to the second transistor arrangement region is sandwiched in the first direction by the second transistor arrangement region and the portion of the third transistor arrangement region. The portion of the first transistor arrangement region is located on a first side in the first direction of the fourth transistor arrangement region. The portion of the third transistor arrangement region connected to the fourth transistor arrangement region is sandwiched in the first direction by the fourth transistor arrangement region and the portion of the first transistor arrangement region.

Modulating a gate drive current supplied to an output drive switch coupled to an electric motor by performing at least the following: obtain a gate drive current modulation profile, supply, based on the gate drive current modulation profile, a first gate drive current level as the gate drive current when the output drive switch is operating within a first region, drop the first gate drive current level to a second gate drive current level when the output drive switch transitions from the first region to operating within a Miller region, increase the second gate drive current level to a third gate drive current level within the Miller region, and set the gate drive current to a fourth gate drive current level when the output drive switch transitions from the Miller region to operating within a third region.

A switching system can include a main switching device configured to switch a voltage, a gate driver having an output coupled to a drive terminal of the main switching device and configured to deliver a drive signal to the main switching device, and a clamp circuit. The clamp circuit can be coupled to the drive terminal of the main switching device. The clamp circuit can include a logic gate configured to drive a clamp switching device coupled to and configured to clamp a voltage at the drive terminal of the main switching device. A drive signal of the clamp switching device can be substantially complementary to the main switching device drive signal. The logic gate can provide at least a portion of a delay between switching transitions of the main switching device and switching transitions of the clamp switching device.

An overvoltage protection apparatus and method. The overvoltage protection apparatus includes: a determining unit, having an input end connected to an input end of the apparatus and an output end connected to an input end of a soft-start unit, and configured to determine whether an input voltage at the input end of the apparatus exceeds a preset protection voltage; and the soft-start unit, having an input end connected to the input end of the apparatus and an output end connected to an output end of the apparatus, where if the determining unit determines that the input voltage does not exceed the preset protection voltage and remains stable in a preset delay time, the soft-start unit delivers the input voltage to the output end of the apparatus; and otherwise, the soft-start unit does not deliver a voltage signal to the output end of the apparatus.

The present disclosure concerns a method and a circuit for controlling first and second switches electrically in series, wherein one or a plurality of crossings of a voltage threshold by a voltage across the first switch cause a conductive state of the second switch.