There is provided an electronic device capable of suppressing a decrease in resolution of a captured image while increasing types of information obtained by an imaging unit. An electronic device includes an imaging unit that includes a plurality of pixel groups each including two adjacent pixels, in which at least one first pixel group of the plurality of pixel groups includes a first lens that condenses incident light, a first photoelectric conversion unit that photoelectrically converts a part of the incident light condensed through the first lens, and a second photoelectric conversion unit different from the first photoelectric conversion unit that photoelectrically converts a part of the incident light condensed through the first lens, and at least one second pixel group different from the first pixel group among the plurality of pixel groups includes a second lens that condenses incident light, a third photoelectric conversion unit that photoelectrically converts the incident light condensed through the second lens, and a third lens different from the second lens that condenses the incident light, a fourth photoelectric conversion unit different from the third photoelectric conversion unit that photoelectrically converts the incident light condensed through the third lens.

To suppress occurrence of flare and ghost while reducing the size or height of an imaging apparatus. The imaging apparatus is configured by mounting a cover structure on a solid-state imaging element. The solid-state imaging element generates a pixel signal by photoelectric conversion according to a light amount of incident light. The cover structure includes a non-flat surface for focusing incident light on a light receiving surface of the solid-state imaging element. The non-flat surface of the cover structure may have either a concave shape or a convex shape. It is assumed that the cover structure includes an inorganic material such as glass, silicon, or germanium.

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

Embodiments disclosed herein reduce petal flare. A flare-suppressing image sensor includes a plurality of pixels including a first set of pixels and a second set of pixels. The flare-suppressing image sensor further includes plurality of microlenses, where each microlens is aligned to a respective one of the first set of pixels. The flare-suppressing image sensor further includes plurality of sub-microlens, where each microlens array is aligned to a respective one of the second set of pixels.

To prevent peeling at an interface between layers forming a layer structure of a solid-state imaging element even in a case where stress is caused by an increase in pressure in a cavity in a configuration in which a translucent member is provided on the solid-state imaging element with a support portion interposed therebetween and the cavity is formed between the solid-state imaging element and the translucent member. There are included a solid-state imaging element, the light-receiving side of which corresponds to one of plate surface sides of a semiconductor substrate; a translucent member provided on the light-receiving side of the solid-state imaging element at a predetermined distance therefrom; and a support portion that forms a cavity between the solid-state imaging element and the translucent member, in which the solid-state imaging element has a layer structure provided on the light-receiving side of the semiconductor substrate, the layer structure including a first layer, a second layer, and a third layer, the second layer being different in material from the first layer, the third layer being different in material from the first layer and formed in the second layer, and the third layer has a protrusion-and-recess shape portion at least in a region where the support portion is formed in a planar direction along the plate surface of the semiconductor substrate, the protrusion-and-recess shape portion forming an interface between the second layer and the third layer in a protrusion-and-recess shape.

Provided is a semiconductor device having high planarity in an in-plane direction. This semiconductor device includes a semiconductor substrate, a first plating film pattern, a second plating film pattern, and an insulating layer. The semiconductor substrate has a first surface, and a second surface on a side opposite to the first surface. The first plating film pattern includes a first portion that covers a first regional portion of the first surface, and a second portion that is stacked to cover a portion of the first portion. The second plating film pattern includes a third portion that covers a second regional portion different from the first regional portion of the first surface, and also includes a fourth portion that is stacked to cover a portion of the third portion. A portion between the second portion and the fourth portion is filled with the insulating layer.

Provided is a pixel circuit. The pixel circuit includes a conversion element forming a voltage of an input level at a first node, a first transistor adjusting the voltage of the first node to a first level in response to a first signal received at a first time interval, a first capacitive element forming a voltage at a second node based on the voltage of the first node, a second transistor adjusting a level of the voltage of the second node to a second level in response to the first signal, a third transistor forming a voltage at a third node, a fourth transistor outputting a current in response to a second signal received in a second time interval, and a. fifth transistor adjusting the voltage of the third node to a third level in response to a third signal received in a third time interval.

A semiconductor apparatus that makes it possible to suppress propagation of noise and heat between elements formed in upper and lower substrates in a stacked structure of plural substrates and suppress deterioration of characteristics of the elements is provided. The semiconductor apparatus includes: a first substrate including a first element layer including a first active element, a first wiring layer arranged on the first element layer, and a shield layer including an electrically conductive material arranged on the first wiring layer; and a second substrate including a second element layer including a second active element arranged on the shield layer, and a second wiring layer arranged on the second element layer, in which the first substrate and the second substrate are stacked one on another.

The present invention includes a light source unit; a light receiving pixel unit which includes a photo electric conversion device and an electric charge accumulating unit, and a distance image processing unit, when the distance is measured by an input voltage in accordance with an electric charge accumulated in the electric charge accumulating unit, that: measures a distance via a normal mode at a predetermined width of radiation light when the distance is measured by an input voltage in accordance with an electric charge accumulated in the electric charge accumulating unit, and switches to the detailed measurement mode according to the distance to the object measured via the normal mode and adjusts a phase of the radiation light radiated from the light source unit by a detailed measurement mode.

To provide an inexpensive display device. The display device includes a pixel and an IC chip. The pixel includes a first pixel circuit including a display element and a second pixel circuit including a light-receiving device. The one IC chip includes a control circuit, a data driver circuit, and a read circuit. The first and second pixel circuits are electrically connected to the read circuit. The control circuit has a function of controlling driving of the data driver circuit and the read circuit. The data driver circuit has a function of supplying image data to the first pixel circuit. The read circuit has a function of outputting a monitor signal corresponding to a monitor current when the monitor current flows through the first pixel circuit. The read circuit also has a function of outputting an imaging signal corresponding to imaging data acquired by the second pixel circuit.