An imaging element is disclosed that includes: a semiconductor substrate; a multilayer wiring layer; a plurality of structures; and a light reflecting layer. The semiconductor substrate has a first surface as a light incidence surface and a second surface opposite to the first surface. A light receiving section of the semiconductor substrate generates electric charge through photoelectric conversion. The multilayer wiring layer has a plurality of wiring layers and is on the second surface side of the semiconductor substrate. The plurality of structures is in the multilayer wiring layer. The light reflecting layer is in the multilayer wiring layer, and forms a reflective region or a non-reflective region in a region with the interlayer insulating layer interposed in between. The region has none of the structures formed therein. The reflective region and the non-reflective region are substantially symmetrical with respect to the optical center of the pixel.

The present technology relates to an imaging element and an electronic device capable of preventing light from leaking into an adjacent pixel. A semiconductor layer in which a first pixel in which a read pixel signal is used to generate an image, and a second pixel in which the read pixel signal is not used to generate an image are arranged, and a wiring layer stacked on the semiconductor layer are provided, and a structure of the first pixel and a structure of the second pixel are different. A first inter-pixel separation portion that separates the semiconductor layer of the adjacent first pixels, and a second inter-pixel separation portion that separates the semiconductor layer of the adjacent second pixels are further provided, and the first inter-pixel separation portion and the second inter-pixel separation portion are provided with different structures. The present technology can be applied to an imaging element in which dummy pixels are arranged.

An imaging device includes a counter electrode, a photoelectric conversion layer that converts light into a signal charge, a plurality of sets of electrodes each of which collects the signal charge, each of the plurality of sets including a first electrode included in a high-sensitivity pixel and a second electrode included in a low-sensitivity pixel, and an auxiliary electrode which is located, as seen in plan view, between the first electrode and the second electrode in each of the plurality of sets and which is commonly included in the high-sensitivity pixel and the low-sensitivity pixel. The distance between the first electrode and the auxiliary electrode is different from the distance between the second electrode and the auxiliary electrode.

The present technology relates to a solid-state imaging device and electronic equipment to suppress degradation of Dark characteristics. A photoelectric converting unit configured to perform photoelectric conversion, and a PN junction region including a P-type region and an N-type region on a side of a light incident surface of the photoelectric converting unit are included. Further, on a vertical cross-section, the PN junction region is formed at three sides including a side of the light incident surface among four sides enclosing the photoelectric converting unit. Further, a trench which penetrates through a semiconductor substrate in a depth direction and which is formed between the photoelectric converting units each formed at adjacent pixels is included, and the PN junction region is also provided on a side wall of the trench. The present technology can be applied, for example, to a backside irradiation type CMOS image sensor.

The present disclosure relates to a method and system for imaging a scene. The method includes generating a shutter pattern and applying the shutter pattern to a photodetector array. The system includes a sensor architecture in three dimensions, where elements of the sensor architecture are stacked in two or more layers. Some elements of the sensor architecture include a photodetector array, register array, a generator to generate shutter patterns, readout circuitry, and an ISP.

There is provided an imaging device including a pixel array section including pixel units two-dimensionally arranged in a matrix pattern, each pixel unit including a photoelectric converter, and a plurality of column signal lines disposed according to a first column of the pixel units. The imaging device further includes an analog to digital converter that is shared by the plurality of column signal lines.

There is provided an imaging device including a pixel array section including pixel units two-dimensionally arranged in a matrix pattern, each pixel unit including a photoelectric converter, and a plurality of column signal lines disposed according to a first column of the pixel units. The imaging device further includes an analog to digital converter that is shared by the plurality of column signal lines.

The present technology relates to a signal processing device and method, and a program that enable easier and more accurate failure detection. The signal processing device includes: an addition unit that adds test data for failure detection to valid data on which predetermined processing is to be performed, two or more samples processed in parallel in different paths having a same sample value in the test data; and a signal processing unit that performs the predetermined processing on the valid data and the test data that has been added to the valid data by a plurality of the paths. The present technology can be applied to in-car cameras.

The present technology relates to a signal processing device and method, and a program that enable easier and more accurate failure detection. The signal processing device includes: an addition unit that adds test data for failure detection to valid data on which predetermined processing is to be performed, two or more samples processed in parallel in different paths having a same sample value in the test data; and a signal processing unit that performs the predetermined processing on the valid data and the test data that has been added to the valid data by a plurality of the paths. The present technology can be applied to in-car cameras.

Provided are an optical filter having excellent light fastness and moisture resistance and having excellent detection accuracy, a structure, and an optical sensor. An optical filter 10a includes a near infrared transmitting filter 1 and a dielectric multi-layer film 2. In this optical filter, the dielectric multi-layer film 2 and the near infrared transmitting filter 1 are in contact with each other, or an organic layer 3 is provided between the dielectric multi-layer film 2 and the near infrared transmitting filter 3. In the optical filter, at least two wavelengths at which a transmittance in a wavelength range of 600 nm or longer and shorter than 1050 nm is 50% are present, and in a case where a wavelength on a shortest wavelength side is represented by λ1 and a wavelength on a longest wavelength side is represented by λ2 among the wavelengths at which the transmittance is 50%, predetermined conditions are satisfied.