The disclosure provides a production method for an EL device including a base material, a TFT layer, and an EL layer; the production method including: forming at least a portion of the base material from a first resin film obtained by curing a first solution applied and a second resin film obtained by curing a second solution applied, wherein a viscosity of the first solution is made higher than a viscosity of the second solution.

A vapor deposition mask device includes a vapor deposition mask having an effective region in which a plurality of first through holes is disposed, and a frame attached to the vapor deposition mask. The vapor deposition mask device includes a plurality of joint portions that joins the vapor deposition mask and the frame to each other. The plurality of joint portions is arranged along the outer edge of the vapor deposition mask. A notch is formed at a position corresponding to between two adjacent joint portions in the outer edge of the vapor deposition mask.

An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.

An embodiment provides a display device manufacturing method comprising the steps of: preparing a substrate having a plurality of semiconductor chips arranged thereon (S1); bonding at least one first semiconductor chip of the plurality of semiconductor chips to a transfer member (S2); irradiating laser light to the first semiconductor chip to separate the first semiconductor chip from the substrate (S3); disposing the first semiconductor chip on a panel substrate of a display device by means of the transfer member (S4); and irradiating light to the transfer member to separate the first semiconductor chip from the transfer member (S5), wherein the transfer member comprises: a transfer layer and a bonding layer disposed on one surface of the transfer layer; the bonding layer comprises at least one bonding protrusion; and the first semiconductor chip is bonded to the bonding protrusion in step S2.

According to a flexible OLED device production method of the present disclosure, after an intermediate region and a flexible substrate region of a plastic film of a multilayer stack are divided, the interface between the plastic film and a glass base is irradiated with laser light. The multilayer stack is separated into the first portion and the second portion while the multilayer stack is kept in contact with the stage. The first portion includes the intermediate region and an OLED device which are adhered to the stage. The OLED device includes a functional layer region and the flexible substrate region. The second portion includes the glass base. The intermediate region adhered to the stage is removed from the stage while the OLED device is kept adhered to the stage.

The present invention relates to an electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration. The present invention also relates to an organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein the light emitting layer contains a metal complex having a group represented by formula (I).

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The present invention relates to an electroluminescence device having high luminous efficiency (for example, external quantum efficiency) and high durability and causing little chromaticity shift after device deterioration. The present invention also relates to an organic electroluminescence device material comprising a substrate having thereon a pair of electrode and at least one organic layer between the electrodes, the organic layer containing a light emitting layer, wherein the light emitting layer contains a metal complex having a group represented by formula (I).

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In the display device, the plurality of display bodies are jointed together and fixed to the elongated flexible circuit board.

An organic EL display device (100) including a plurality of pixels includes an element substrate (1) including a substrate, and a plurality of organic EL elements supported by the substrate and respectively located in the plurality of pixels; and a thin film encapsulation structure (10) covering the plurality of pixels. The thin film encapsulation structure includes a first inorganic barrier layer (12), an organic barrier layer (14) in contact with a top surface of the first inorganic barrier layer (12), the organic barrier layer (14) including a plurality of solid portions distributed discretely, and a second inorganic barrier layer (16) in contact with the top surface of the first inorganic barrier layer (12) and top surfaces of the plurality of solid portions of the organic barrier layer (14). The organic barrier layer (14) exhibits a chromatic color.

An organic EL display device (100) including a plurality of pixels includes an element substrate (1) including a substrate, and a plurality of organic EL elements supported by the substrate and respectively located in the plurality of pixels; and a thin film encapsulation structure (10) covering the plurality of pixels. The thin film encapsulation structure includes a first inorganic barrier layer (12), an organic barrier layer (14) in contact with a top surface of the first inorganic barrier layer (12), the organic barrier layer (14) including a plurality of solid portions distributed discretely, and a second inorganic barrier layer (16) in contact with the top surface of the first inorganic barrier layer (12) and top surfaces of the plurality of solid portions of the organic barrier layer (14). The organic barrier layer (14) is black.