Patent classifications
H05H2242/10
Device and Method for Generating a Dielectric Barrier Discharge
In an embodiment a device includes a thermoelectric component, an electrode arranged opposite the thermoelectric component and a high voltage source configured to generate a high voltage between the thermoelectric component and the electrode sufficient to ignite a dielectric barrier discharge.
GAS TREATMENT SYSTEM AND GAS TREATMENT METHOD USING THE SAME
A gas treatment system includes a first scrubber, a regenerative catalytic oxidizer (RCO) that treats gas that passes through the first scrubber, a second scrubber that treats the gas that passed through the regenerative catalytic oxidizer, and a dielectric barrier discharge (DBD) plasma reactor that treats the gas that passed through the second scrubber. The regenerative catalytic oxidizer includes a two-bed regenerative catalytic reactor.
A COMPACT CYCLOTRON RESONANCE HIGH-POWER ACCELERATION FOR ELECTRONS
Apparatuses and methods for accelerating electrons including an electron source configured to provide a beam of electrons and an accelerator utilize electron cyclotron resonance acceleration (eCRA). The accelerator includes a radio frequency (RF) cavity having a longitudinal axis, one or more inlets, and one or more outlets and an electromagnet substantially surrounding at least a portion of the cavity and configured to produce an axial magnetic field. At least one pair of waveguides couple the cavity to an RF source configured to generate an RF wave. The RF wave is a superposition of two orthogonal TE.sub.111 transverse electric modes excited in quadrature to produce an azimuthally rotating standing-wave mode configured to accelerate the beam of electrons axially entering the cavity with non-linear cyclotron resonance acceleration.
PLASMA SOURCE FOR GENERATING A DISINFECTING AND/OR STERILIZING GAS MIXTURE
A plasma source for generating a disinfecting and/or sterilizing gas mixture, including an ionization chamber having a dielectric tubular portion, an inflow port for feeding a gas or gas mixture into the chamber, an outflow port for exhausting the disinfecting and/or sterilizing gas mixture out of the chamber, a first electrode positioned inside the dielectric tubular portion, and a second electrode positioned outside the dielectric tubular portion. The plasma source has a high voltage source having a high voltage output terminal, wherein an electrical conductor connects the output terminal to the first or second electrode, and a forced gas cooling system for cooling the ionization chamber.
Matchless plasma source for semiconductor wafer fabrication
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
Radioisotope production
A radioisotope production apparatus (RI) comprising an electron source arranged to provide an electron beam (E). The electron source comprises an electron injector (10) and an electron accelerator (20). The radioisotope production apparatus (RI) further comprises a target support structure configured to hold a target (30) and a beam splitter (40) arranged to direct the a first portion of the electron beam along a first path towards a first side of the target (30) and to direct a second portion of the electron beam along a second path towards a second side of the target (30).
Compositions for treatment of cancer, methods and systems for forming the same
Solutions having a solvent and a cold atmospheric plasma dissolved in the solvent are described. Methods and systems of forming cold atmospheric plasma (CAP)-containing solutions are also described. A system for producing (CAP)-containing solutions includes a gas source; a plasma generating device having a hollow body fluidically coupled with the gas source, a closed proximal end and an open distal end, the hollow body receiving gas from the gas source, and at least one electrode in or about the hollow body and ionizing the gas to discharge a cold atmospheric plasma (CAP) from the open distal end; and a container for housing a fluid, the open distal end of the plasma generating device in fluid communication with an inner portion of the container. CAP-containing solutions can be used in treatment of cancer cells, infected tissue sterilization, microorganism inactivation, promotion of wound healing, skin regeneration, and blood coagulation, and teeth bleaching/whitening.
ION BEAM EXCLUSION PATHS ON THE TARGET SURFACE TO OPTIMIZE NEUTRON BEAM PERFORMANCE
Embodiments of systems, devices, and methods relate to exclusion of ion beam paths on the target surface to optimize neutron beam performance. A particle beam is directed along an axis so that the particle beam is incident on a target positioned on the particle beam axis. The target has a scannable surface extending over an area substantially orthogonal to the axis. The particle beam is scanned across the scannable surface of the target along a first path having a first flux. The particle beam, having a second flux, is scanned across the scannable surface of the target along a second path that is within an exclusion area of the target.
Apparatuses for generating neutrons
An apparatus for generating neutrons may include: a hollow casing configured to rotate about a central axis, the casing including a wall having a central region substantially at the central axis and a peripheral region, wherein the wall defines a cavity, and wherein the cavity is configured to contain a first coolant fluid; an active layer at least partially on the peripheral region external to the cavity, wherein the active layer is configured to realize a neutron-generating reaction; at least one particle accelerator configured to direct an ion beam on the active layer to activate the neutron-generating reaction; movement means configured to rotate the casing about the central axis and to force the first coolant fluid to contact the wall at the active layer for cooling the casing; and external cooling including a second coolant fluid contacting at least an external portion of the wall.
MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.