Patent classifications
H05H2242/10
MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
STABILIZED DIODE RADIATION SOURCE, AND LONG-LIFE ROTATING TARGET FOR HIGH-POWER PARTICLE BEAMS
In one or more amendments, a particle accelerator has a particle beam source and a target. The particle accelerator is configured to output radiation in at least one pulse. The particle beam source has an electrode with an electrode surface. The electrode surface has a first portion and a second portion. The first portion of the electrode surface defines a spiral pattern with high spatial-frequency contours. The second portion of the electrode surface defines a spiral pattern with low spatial-frequency contours.
DEVICE FOR COOLING AN OBJECT IN A VACUUM CHAMBER
A cooling device for cooling an object contained in a vacuum chamber. The cooling device is insertable into and removable out of a boot housed by the vacuum chamber. The boot is in thermal contact with the object. A distal portion of the cooling device comprises a cold station and a coupler thermally connected to the cold station. The coupler comprises at least two mobile contacts thermally connected to the first cold station. The cooling device also comprises a driving means and a mechanical transmission connecting the driving means to the at least two mobile contacts. The driving means and the mechanical transmission are configured to move the at least two mobile contacts radially inwardly and outwardly to respectively loosen or make a conductive thermal contact between the cold station and the boot.
Y-TYPE INCLINED LITHIUM TARGET FOR GENERATING HIGH POWER NEUTRONS
The present invention relates to a y-type inclined lithium target for generating high power neutrons, comprising a pair of target modules comprising a substrate extending to a predetermined width and a solid target provided on one surface of the substrate, wherein the pair of target modules are installed at a first angle with respect to each other and are disposed at a second angle with respect to a direction in which a particle beam is irradiated. The y-type inclined lithium target for generating high power neutrons according to the present invention has the advantage of being capable of maximizing a heat transfer area. In addition, since the target is configured as a pair of target modules, each of the target modules can be miniaturized. Accordingly, generation and accuracy of a lithium layer can be improved, and the advantage of easy storage is provided.
Dielectric barrier discharge plasma generator
A dielectric barrier discharge plasma generator includes a ground electrode and a high voltage electrode which are configured to form a circuit to receive a power input for plasma generation, a dielectric barrier having a first surface attached to the high voltage electrode, and a second surface facing the ground electrode, and discharge gap being formed between the second surface of the dielectric barrier and the ground electrode for plasma generation, and a resiliently deformable mechanism operative to bias the high voltage electrode against the first surface of the dielectric barrier.
Gas treatment system and gas treatment method using the same
A gas treatment system includes a first scrubber, a regenerative catalytic oxidizer (RCO) that treats gas that passes through the first scrubber, a second scrubber that treats the gas that passed through the regenerative catalytic oxidizer, and a dielectric barrier discharge (DBD) plasma reactor that treats the gas that passed through the second scrubber. The regenerative catalytic oxidizer includes a two-bed regenerative catalytic reactor.
Ion beam exclusion paths on the target surface to optimize neutron beam performance
Embodiments of systems, devices, and methods relate to exclusion of ion beam paths on the target surface to optimize neutron beam performance. A particle beam is directed along an axis so that the particle beam is incident on a target positioned on the particle beam axis. The target has a scannable surface extending over an area substantially orthogonal to the axis. The particle beam is scanned across the scannable surface of the target along a first path having a first flux. The particle beam, having a second flux, is scanned across the scannable surface of the target along a second path that is within an exclusion area of the target.
Neutron beam source generation system comprising an accelerator, a target, and a neutron beam source stabilization control system, and neutron beam source generation method
A neutron beam source generation system, a neutron beam source stabilization control system, and a neutron beam source generation method are provided. The neutron beam source generation system includes an accelerator, a target, and a calibration module. The accelerator is configured to generate a proton beam. A neutron beam source is generated by irradiating the target with the proton beam. The calibration module includes a pair of electromagnet components, a profile-measuring component, a current-measuring component, and a Faraday cup component. The calibration module uses the pair of electromagnet components to control the distribution of the proton beam according to the profile distribution of the proton beam as measured by the profile-measuring component. The calibration module adjusts the current of the proton beam according to the first current value as measured by the current-measuring component, the second current value as measured by the Faraday cup component, or both.
Matchless plasma source for semiconductor wafer fabrication
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.