Patent classifications
H05H2242/10
Plate-type ozone generator and system for generating ozone
A plate-type ozone generator includes a first ground electrode plate, second ground electrode plate, central plate and reactor middle frame arranged between first end and second end of plate-type ozone generator, wherein the central plate houses the reactor middle frame that is moveable from centre of central plate. The frame includes a high-voltage electrode plate, first dielectric barrier plate and second dielectric barrier plate, first gap being formed between first dielectric barrier plate and first ground electrode plate and second gap being formed between second dielectric barrier plate and second ground electrode plate. The first gap and second gap are filled with gas. A power source is used to charge the first ground electrode plate, second ground electrode plate, and high-voltage electrode plate. Dielectric barrier discharge occurs for generating ozone.
Matchless plasma source for semiconductor wafer fabrication
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
Matchless plasma source for semiconductor wafer fabrication
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
Matchless plasma source for semiconductor wafer fabrication
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
Device and method for generating a dielectric barrier discharge
In an embodiment a device includes a thermoelectric component, an electrode arranged opposite the thermoelectric component and a high voltage source configured to generate a high voltage between the thermoelectric component and the electrode sufficient to ignite a dielectric barrier discharge.
Fluid diffusion system and method for dielectric barrier discharge system
A system includes a dielectric barrier discharge (DBD) reactor. The DBD reactor includes a plurality of dielectric barriers. The DBD reactor also includes a plurality of electrodes disposed between the plurality of dielectric barriers. The system also includes a diffuser system fluidly coupled to an outlet of the DBD reactor. The diffuser system is configured to direct a fluid output through the outlet to one or more channels disposed between the plurality of dielectric barriers. The diffuser system includes a diffuser configured to diffuse the fluid into the one or more channels to cool at least one dielectric barrier of the plurality of dielectric barriers.
SUPERCONDUCTING CRYO MODULE
Provided is a superconducting cryo module that can be made more compact. A superconducting cryo module according to the present disclosure comprises: a superconducting accelerating cavity that has a cell part accelerating electrons, a beam pipe part extending from the cell part to an electron incidence side, and an extraction part of the electrons which were accelerated by the cell part; and an electron gun that is located in the interior of the beam pipe part of the superconducting accelerating cavity, is located on the same axis as a beam axis BA of the superconducting accelerating cavity, and emits electrons into the cell part.
Cathode end cooling systems for plasma windows positioned in a beam accelerator system
A beam accelerator system comprises an ion accelerator that generates a high-energy ion beam, a low-pressure chamber, an anode adjacent and fluidly connected to the low-pressure chamber, a plasma window adjacent and fluidly connected to the anode, and a cathode housing block adjacent and fluidly connected to the plasma window. The plasma window comprises a plurality of cooling plates, each cooling plate comprising an aperture that is aligned with an aperture in one or more adjacent cooling plate to form a plasma channel. The cathode housing block comprises a cathode target region and a cooling portion. The cooling portion comprises a fluid inlet, a fluid outlet, a cooling channel fluidly coupling the fluid inlet and the fluid outlet, and an opening adjacent to the plasma window and aligned with a longitudinal axis of the plasma channel.
MATCHLESS PLASMA SOURCE FOR SEMICONDUCTOR WAFER FABRICATION
A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
Low Energy Electron-Cooling System and Method
An adiabatically expanded low energy electron-cooling system and method for increasing the phase space intensity and overall intensity of low energy particle beams, including a vacuum-chamber to allow electron beam and particle beam merging and separation, a cathode to generate the electron beam, a collector to collect the electron beam, magnetic field generation devices including solenoids and toroids to guide the electrons on their desired trajectories, ports to allow particles to enter and leave, neutralizing-background-ions to neutralize electron electric fields, electrodes to accelerate and decelerate the electron beam and an adiabatic-solenoid to enable electron beam expansion. By overlapping the electron and particle beams in an overlap-region, thermal energy is transferred from the particle beam to the electron beam, which allows an increase in the phase space density and overall density of the particle beams.