An excellent complementary semiconductor device is provided using a simple process. An n-type drive semiconductor device including a substrate; and a source electrode, a drain electrode, a gate electrode, a gate insulating layer, and a semiconductor layer on the substrate; and including a second insulating layer on the opposite side of the semiconductor layer from the gate insulating layer; in which the second insulating layer contains an organic compound containing a bond between a carbon atom and a nitrogen atom; and in which the semiconductor layer contains a carbon nanotube composite having a conjugated polymer attached to at least a part of the surface thereof.

Provided is a method of manufacturing a film, including: a manufacturing step of forming a film by performing movement, in a state in which a blade surface of a coating blade disposed to be spaced so as to face a substrate surface of a substrate is in contact with a solution for forming a film which is provided between the blade surface and the substrate surface, in a first direction in a plane parallel to the substrate surface, in which the solution is stored in a liquid reservoir between the blade surface and the substrate surface, and at least a portion of an outer peripheral end portion of the coating blade which is in contact with the solution is tilted with respect to the first direction in a plane parallel to the substrate surface. Accordingly, a method of manufacturing a film for forming a high quality film with high productivity is provided.

A method of manufacturing an organic semiconductor film, including a step of moving a coating blade surface positioned to face a substrate surface in a first direction parallel to the substrate surface, while in contact with an organic semiconductor solution supplied to a portion between the blade surface and the substrate surface to form the organic semiconductor film in the first direction. The coating blade is disposed to have first and second gaps having different separation gap sizes with the substrate surface in a region where the blade surface and the organic semiconductor solution are in contact. The first gap is positioned on an upstream side of the first direction and the second gap, which is smaller than the first gap, is provided on a downstream side. A second gap size is a minimum distance between the substrate surface and the blade surface and is 40 ?m or less.

A device for manufacturing an organic semiconductor film, including a coating member disposed to face a substrate surface while spaced therefrom for forming the film, and forming a liquid reservoir of an organic semiconductor solution between the coating member and the substrate; a supply portion that supplies the solution; and a cover portion that covers at least a crystal growth portion of the solution. The cover portion includes a guide that guides a deposit formed of an evaporated solvent of the solution to a film-unformed region of the organic semiconductor film. While the solution is supplied between the coating member and the substrate surface by the supply portion, the coating member is moved in a first direction parallel to the substrate surface in a state of being in contact with the solution, to form the film with the crystal growth portion as a starting point.

The present disclosure relates to a memory device having a hybrid insulating layer and a method for preparing the same. In detail, a memory device including a gate electrode on a substrate, a source electrode, and a drain electrode has a hybrid memory insulating layer between the gate electrode and the source and drain electrodes that is polarizable and includes a mixed material of inorganic matter and organic matter to lead to hysteresis. According to the present disclosure, a memory insulating layer is formed as a hybrid insulating layer including a mixture of polyvinylphenol as the organic matter and vinyltriethoxysilane as the inorganic matter to complement the properties of an inorganic memory and an organic memory whereby increasing memory performance, and it stably operates at both low and high temperatures whereby having a wide usage range.

An object of the present invention is to provide an organic semiconductor composition that may form an organic thin film transistor having excellent hysteresis characteristics while high carrier mobility is maintained. Another object of the present invention is to provide an organic semiconductor film, an organic thin film transistor, and a method of manufacturing an organic thin film transistor. An organic semiconductor composition according to the present invention includes: a compound X having a molecular weight of 2,000 or greater and having a repeating unit represented by Formula (1); and a low molecular weight compound Y represented by Formula (2).

##STR00001##

Provided are a compound which is excellent in solubility in a solvent and easily provides a film exhibiting high mobility without complicated processes, an organic semiconductor material using the same, and an organic semiconductor ink which enables easy fabrication of an organic transistor composed of a practical configuration. The problems are solved by a method of producing a dinaphthothiophene derivative, the method including the following steps (I) and (II): (I) a first step of subjecting a naphthol derivative represented by General Formula (A) and a naphthalene thiol derivative represented by General Formula (B) to dehydration condensation in the presence of acid to produce a sulfide derivative represented by General formula (C); and (II) a second step of performing dehydrogenation reaction of the sulfide derivative (C) in the presence of a transition metal salt or a transition metal complex to produce a dinaphthothiophene derivative (D).

The present invention is to provide a semiconductor element achieving a high-level detection sensitivity when utilized as a sensor. The present invention relates to a semiconductor element including an organic film, a first electrode, a second electrode, and a semiconductor layer, in which the first electrode, the second electrode and the semiconductor layer are formed on the organic film, the semiconductor layer is arranged between the first electrode and the second electrode, the semiconductor layer contains a carbon nanotube, and the organic film has a water contact angle of 5? or more and 50? or less.

An object of the present invention is to provide a method for accurately forming an antenna substrate as well as an antenna substrate with wiring line and electrode by a coating method. One aspect of the present invention provides a method for producing an antenna substrate with wiring line and electrode including the steps of: (1) forming a coating film using a photosensitive paste containing a conductive material and a photosensitive organic component on an insulating substrate; (2-A) processing the coating film into a pattern corresponding to an antenna by photolithography; (2-B) processing the coating film into a pattern corresponding to a wiring line; (2-C) processing the coating film into a pattern corresponding to an electrode; (3-A) curing the pattern corresponding to an antenna into an antenna; (3-B) curing the pattern corresponding to a wiring line into a wiring line; and (3-C) curing the pattern corresponding to an electrode into an electrode.

An object of the present invention is to provide a compound which, when used for organic semiconductor films in organic thin-film transistors, makes the organic thin-film transistors exhibit a high carrier mobility, a material for an organic thin-film transistor for which the compound is used, a composition for an organic thin-film transistor, an organic thin-film transistor and a method for manufacturing the same, and an organic semiconductor film.

An organic thin-film transistor of the present invention contains a compound represented by General Formula (1) in an organic semiconductor film (organic semiconductor layer) thereof.

##STR00001##