A photosensitive resin composition comprising (A) a cardo-based resin comprising a repeating unit represented by chemical formula 1 (comprising chemical formula 4); (B) a reactive unsaturated compound; (C) a pigment; (D) an initiator; and (E) a solvent, and a light blocking layer using the same having improved adhesiveness or adhesion are provided.

The present disclosure relates to compounds of Formula (1) as useful materials for OLEDs. A is CN, cyanoaryl, or heteroaryl having at least one nitrogen atom as a ring-constituting atom; and D.sup.1, D.sup.2 and D.sup.3 are diarylamino or carbazolyl. ##STR00001##

Provided is an inkjet recording medium for an organic semiconductor device including a base material, an electrode, and ink receiving layer in this order, wherein the ink receiving layer has an ink penetration prevention area on an electrode side that prevents ink which permeates from a surface far from the electrode toward the electrode from reaching the electrode.

A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.

A technique, comprising: forming in situ on a support substrate: a first metal layer; a light-absorbing layer after the first metal layer; a conductor pattern after the light-absorbing layer; and a semiconductor layer after the conductor pattern; patterning the semiconductor layer using a resist mask to form a semiconductor pattern defining one or more semiconductor channels of one or more semiconductor devices; and patterning the light-absorbing layer using the resist mask and the conductor pattern, so as to selectively retain the light-absorbing layer in regions that are occupied by at least one of the resist mask and the conductor pattern.

A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is provided. By adjusting the optical path length between an electrode having a reflective property and a light-emitting layer by the central wavelength of a wavelength range of light passing through a color filter layer, the high-definition display device with high color purity is provided without performing selective deposition of light-emitting layers. In a light-emitting element, a plurality of light-emitting layers emitting light of different colors are stacked. The closer the light-emitting layer is positioned to the electrode having a reflective property, the shorter the wavelength of light emitted from the light-emitting layer is.

A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.

Memory devices are provided having a cross-point array of polymer junctions with individually-programmed conductances that can be reset. In one aspect, a memory device is provided. The memory device includes: bottom metal lines; top metal lines; and polymer junctions in between the bottom metal lines and the top metal lines, wherein the polymer junctions include an organic polymer doped with a spiropyran and an acid. A method of forming and a method of operating the memory device are also provided.

A photosensitive resin composition comprising (A) a cardo-based resin comprising a repeating unit represented by chemical formula 1 (comprising chemical formula 4); (B) a reactive unsaturated compound; (C) a pigment; (D) an initiator; and (E) a solvent, and a light blocking layer using the same having improved adhesiveness or adhesion are provided

The present invention provides a bio-sensing device comprising: a source electrode and a drain electrode disposed apart from each other; a gate electrode disposed apart between the source electrode and the drain electrode; an insulating film pattern disposed on the gate electrode to electrically insulate the gate electrode from the source electrode and the drain electrode; a sensing film, which is a channel connecting the source electrode and the drain electrode and is disposed on the insulating film pattern and on at least parts of the source electrode and the drain electrode and of which material includes single-walled carbon nanotubes (SWCNTs); and an anchor structure, which is a structure for binding the sensing film to the insulating film pattern and is disposed on the insulating film pattern and of which material includes multi-walled carbon nanotubes (MWCNTs).