The invention relates to the field of measuring equipment, and more particularly, to gas analysis sensors/chemical sensors designed to analyze the composition of gas mixtures and to detect and quantify toxic chemical gaseous compounds in an environment. The gas multisensor includes an array of N organic field-effect transistors, each of which consist of at least a source electrode and a drain electrode separated by an organic semiconductor layer, a gate electrode, a dielectric layer, and an additional receptor layer based on a metalloporphyrin of general formula 1 or 2 and completely or partially covering the organic semiconductor layer, while a metal ion M of metalloporphyrin is a transition metal, and each of the N organic field-effect transistors contained in the array differs from the other organic field- effect transistors in the array by the chemical structure of the receptor layer. The technical result is lowering the limit of detection of an electronic nose device based on chemosensors.

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A technique, comprising: forming in situ on a support substrate: a first metal layer; a light-absorbing layer after the first metal layer; a conductor pattern after the light-absorbing layer; and a semiconductor layer after the conductor pattern; patterning the semiconductor layer using a resist mask to form a semiconductor pattern defining one or more semiconductor channels of one or more semiconductor devices; and patterning the light-absorbing layer using the resist mask and the conductor pattern, so as to selectively retain the light-absorbing layer in regions that are occupied by at least one of the resist mask and the conductor pattern.

A device comprising a stack of layers defining one or more electronic elements, wherein the stack comprises at least: one or more semiconductor channels; a dielectric; a first conductor pattern defining one or more coupling conductors, wherein the one or more coupling conductors are capacitively coupled to the one or one or more semiconductor channels via the dielectric; a planarisation layer; a second conductor pattern defining one or more routing conductors, wherein the second conductor pattern is in contact with the first conductor pattern via through holes in at least the planarisation layer, and wherein the semiconductor channel regions are at least partly outside the through hole regions.

The present disclosure relates to a stretchable organic light-emitting diode and a manufacturing method thereof, the stretchable organic light-emitting diode including: a stretchable driving unit including a stretchable field effect transistor (FET); and a stretchable light-emitting unit including an elastic material on the stretchable driving unit.

A technique of producing a stack defining a plurality of TFTs including at least source/drain electrodes and addressing lines at a source/drain level, wherein the method comprises: forming a patterned source/drain level stack comprising at least a first layer over the support substrate and a second layer over the first layer, to define at least said source/drain electrodes and said addressing lines; depositing semiconductor channel material over at least said source/drain electrodes and said addressing lines; and patterning the layer of semiconductor channel material by a patterning process; wherein the material of the first layer is more resistant to removal by said patterning process than the material of said second layer.

Methods and devices for forming painted circuits using multiple layers of electrically conductive paint. In one aspect, a painted circuit includes a substrate (111) and one or more paint layer (106, 108, 110, 112, 114, 116, 120, 122) applied to the substrate, where the one or more paint layers each form an electrical component of the painted circuit. A given paint layer of the one or more paint layers includes a conductive paint formulation having a resistance that is defined by a concentration of conductive material that is included in the conductive paint formulation and a thickness of the given paint layer, and lower concentrations of the conductive material included in the conductive paint formulation provide a higher resistance than higher concentrations of conductive material.

A flexible display substrate for a foldable display apparatus, a method of manufacturing the flexible display substrate, and a foldable display apparatus are disclosed. The flexible display substrate includes: a first region corresponding to a non-foldable region of the foldable display apparatus; a second region corresponding to a foldable region of the foldable display apparatus; a plurality of first pixel units disposed in the first region, configured to display an image, and each including a polysilicon thin film transistor; and a plurality of second pixel units disposed in the second region, configured to display an image, and each including an organic thin film transistor.

Embodiments of the present disclosure relate to the field of electronic sensing technologies, and provide a chemical sensing unit, a chemical sensor, and a chemical sensing device. The chemical sensing unit includes a thin film transistor arranged on a substrate, and a light emitting diode coupled to the thin film transistor. The thin film transistor includes a semiconductor active layer, a source, and a drain, and the semiconductor active layer is mainly composed of a chemically sensitive semiconductor material. The chemical sensing unit is provided with a via hole in a region between the source and the drain, such that the semiconductor active layer is exposed at a position corresponding to the via hole. The light emitting diode includes a first electrode, a light-emitting functional layer, and a second electrode which are stacked in sequence, wherein the first electrode is coupled to the drain.

A sensor sheet includes unit sensor sheets configured to detect a physical property value at multiple points on a sensor layer, each unit sensor sheet including a first substrate, and an electrode layer and the sensor layer sequentially formed on one side of the first substrate; and a wiring substrate to which the unit sensor sheets are configured to be coupled, the wiring substrate including a second substrate, and a plurality of wirings provided on one side of the second substrate. One side of the wiring substrate and one side of each unit sensor sheet are facing each other. A conductive bonding member configured to electrically couple each unit sensor sheet and the wiring substrate with each other, is included between the electrode layer of each unit sensor sheet and at least one of the wirings of the wiring substrate.

Provided are a complementary carbon nanotube field effect transistor (CNT-FET) and a manufacturing method thereof. In particular, provided is carbon nanotube-based type conversion technology (p-type.fwdarw.n-type) using a photosensitive polyvinyl alcohol polymer which can be selectively cross-linked at a desired position based on a semiconductor standard process, i.e., photolithography. The CNT-FET includes: a substrate; a first channel layer formed on the substrate and made of a carbon nanotube; a first source electrode formed at one side of the first channel layer and made of a conductive material; a first drain electrode formed at the other side of the first channel layer and made of a conductive material; a conversion induction layer formed on the first channel layer between the first source electrode and the first drain electrode and configured to convert the first channel layer from a p-type to an n-type; a protective layer configured to protect the conversion induction layer; and a first gate electrode formed on the protective layer.