A transparent photovoltaic cell and method of making are disclosed. The photovoltaic cell may include a transparent substrate and a first active material overlying the substrate. The first active material may have a first absorption peak at a wavelength greater than about 650 nanometers. A second active material is disposed overlying the substrate, the second active material having a second absorption peak at a wavelength outside of the visible light spectrum. The photovoltaic cell may also include a transparent cathode and a transparent anode.

The present disclosure provides an optical-sensing device, a manufacturing method thereof, and a display panel. The optical-sensing device includes a sensor TFT disposed on a substrate and a switch TFT connected with the sensor TFT. The sensor TFT and the switch TFT include a first active layer and a second active layer, the first active layer comprises a first IGZO layer and a perovskite layer disposed on the first IGZO layer, and the second active layer comprises a second IGZO layer.

An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode; an organic layer; a first semiconductor layer; and a second semiconductor layer. The second electrode is disposed to be opposed to the first electrode. The organic layer is provided between the first electrode and the second electrode. The organic layer includes at least a photoelectric conversion layer. The first semiconductor layer is provided between the second electrode and the organic layer. The first semiconductor layer includes at least one of a carbon-containing compound or an inorganic compound. The carbon-containing compound has a greater electron affinity than a work function of the first electrode. The inorganic compound has a greater work function than the work function of the first electrode. The second semiconductor layer is provided between the second electrode and the first semiconductor layer. The second semiconductor layer has an absolute value B of a difference between a HOMO (Highest Occupied Molecular Orbital) level and a Fermi level of the second electrode or has, near the Fermi level, an in-gap level having a state density of 1/10000 or more as compared with the HOMO level. The absolute value B is greater than or equal to an absolute value A of a difference between a first LUMO (Lowest Unoccupied Molecular Orbital) level and the Fermi level. The first LUMO level is calculated from an optical band gap.

An imaging element according to an embodiment of the present disclosure includes: a first electrode; a second electrode; an organic layer; a first semiconductor layer; and a second semiconductor layer. The second electrode is disposed to be opposed to the first electrode. The organic layer is provided between the first electrode and the second electrode. The organic layer includes at least a photoelectric conversion layer. The first semiconductor layer is provided between the second electrode and the organic layer. The first semiconductor layer includes at least one of a carbon-containing compound or an inorganic compound. The carbon-containing compound has a greater electron affinity than a work function of the first electrode. The inorganic compound has a greater work function than the work function of the first electrode. The second semiconductor layer is provided between the second electrode and the first semiconductor layer. The second semiconductor layer has an absolute value B of a difference between a HOMO (Highest Occupied Molecular Orbital) level and a Fermi level of the second electrode or has, near the Fermi level, an in-gap level having a state density of 1/10000 or more as compared with the HOMO level. The absolute value B is greater than or equal to an absolute value A of a difference between a first LUMO (Lowest Unoccupied Molecular Orbital) level and the Fermi level. The first LUMO level is calculated from an optical band gap.

Provided is an intrinsically stretchable organic solar cell, a manufacturing method thereof, and an electronic device comprising the same. The intrinsically stretchable organic solar cell of the present invention is characterized that wherein excellent interfacial bonding among stretchable constituent elements constituting each layer is induced so that the constituent elements are seamlessly integrated into a single system, thereby ensuring excellent initial power conversion efficiency (PCE), and mechanical robustness showing that 70% or more of initial PCE is maintained in spite of repetitive tensile strains. Thus, the organic solar cell is useful for an electronic device applied to any one selected from a group consisting of sensors, electronic skins, flexible displays, and stretchable displays.

Provided is an intrinsically stretchable organic solar cell, a manufacturing method thereof, and an electronic device comprising the same. The intrinsically stretchable organic solar cell of the present invention is characterized that wherein excellent interfacial bonding among stretchable constituent elements constituting each layer is induced so that the constituent elements are seamlessly integrated into a single system, thereby ensuring excellent initial power conversion efficiency (PCE), and mechanical robustness showing that 70% or more of initial PCE is maintained in spite of repetitive tensile strains. Thus, the organic solar cell is useful for an electronic device applied to any one selected from a group consisting of sensors, electronic skins, flexible displays, and stretchable displays.

The present invention relates to a perovskite optoelectronic device and a manufacturing method therefor. The present invention allows manufacture of a perovskite optoelectronic device with high efficiency at a low cost, as well as improving the electrical conductivity of a carbon nanotube electrode, by laying graphene oxide over conventional carbon nanotubes and may also be applied to a flexible device.

A tandem solar cell includes a perovskite solar cell including a perovskite absorption layer, a silicon solar cell placed under the perovskite solar cell, a junction layer placed between the perovskite solar cell and the silicon solar cell, an upper electrode placed on the perovskite solar cell, and a lower electrode placed under the silicon solar cell.

Organic-inorganic light-absorbing materials with perovskite structure, being used in perovskite solar cells production. The objective of the invention is to provide the possibility of obtaining perovskite using precursors that are in a liquid state without the use of additional substances and reagents. The concept of the invention is based on the fact that a light-absorbing material with perovskite structure with general formula ADB.sub.3, where A stands for methylammonium MA.sup.+ (CH.sub.3NH.sub.3.sup.+), formamidinium, FA.sup.+ ((NH.sub.2).sub.2CH.sup.+), guanidinium Gua (C(NH2)3+), cesium Cs.sup.+ or a mixture thereof, B stands for Cl.sup.−, Br.sup.−, I.sup.− or a mixture thereof, while the component D represents Sn, Pb, Bi or a mixture thereof, is obtained by mixing composition AB-nB.sub.2 and a component containing D, where the component containing D is chosen from elemental Sn, Pb, Bi and/or their salts, mixtures, alloys, whereas the composition AB-nB.sub.2 is deposited onto the component D followed by subsequent removal of the excessive components, n is greater than or equal to one, the component B.sub.2 represents Cl.sub.2, Br.sub.2, I.sub.2 or a mixture thereof.

A monolithic solar cell includes a first solar cell that is a sequential stack of an electrode, a silicon substrate, and an n-type emitter layer; a recombination layer disposed on the n-type emitter layer; an interfacial layer that is a double layer constituted of PEDOT:PSS and poly-TPD or PEDOT:PSS and PCDTBT, and that is disposed on the recombination layer; and a second solar cell that includes a p-type hole selective layer and a perovskite layer disposed on the p-type hole selective layer, the a p-type hole selective layer contacting and being integrated onto the interfacial layer of the first solar cell in a heat treatment during which the interfacial layer is partially decomposed, wherein the presence of the interfacial layer prevents a reduction in photoelectric conversion efficiency that occurs if the first solar cell and the second solar cell are combined without the presence of the interfacial layer.