A near-infrared absorber includes a compound represented by Chemical Formula 1. A near-infrared absorbing/blocking film, a photoelectric device, an organic sensor, and an electronic device may include the near-infrared absorber.

##STR00001##

In Chemical Formula 1, Ar, Ar.sup.1, Ar.sup.2, Ar.sup.3, Ar.sup.4, X.sup.1, X.sup.2, L.sup.1, L.sup.2, R.sup.1, and R.sup.2 are the same as defined in the detailed description.

A method for preparing an inorganic perovskite battery based on a synergistic effect of gradient annealing and antisolvent includes preparing a perovskite layer by a gradient annealing and an antisolvent treatment. A thickness of the perovskite layer is 100 to 1000 nm; when preparing a perovskite precursor solution of the perovskite layer, a solvent is an amide-based solvent and/or a sulfone-based solvent; a concentration of the perovskite precursor solution for preparing the perovskite layer is 0.4 to 2 M; and the gradient annealing is conducted at 40 to 70° C./0.5 to 5 min+70 to 130° C./0.5 to 5 min+130 to 160° C./5 to 20 min+160 to 280° C./0 to 20 min; and a solvent for the anti-solvent treatment is an alcohol solvent, a benzene solvent or an ether solvent.

A photovoltaic device includes a first electrode, a first photoactive material layer, one or more interfacial layers, a second photoactive material layer comprising a 2-D perovskite material having the formula (C′).sub.a(C).sub.bM.sub.nX.sub.3n+1 and a second electrode. C′ is a bulky organic cation, C is a small organic or inorganic cation, M is a metal, X is a halide, a and b are real numbers, and n is an integer.

Method of manufacturing a photovoltaic device, comprising the steps of: providing a substrate; depositing a first electrode layer on said substrate; depositing a p-type hole transport layer on said first electrode layer; depositing a Perovskite-based absorber layer on said p-type hole transport layer; depositing an n-type electron transport layer on said Perovskite-based absorber layer; and depositing a second electrode layer on said n-type electron transport layer, wherein said second electrode layer comprises boron doped zinc oxide or tin oxide and is deposited by chemical vapour deposition at an absolute pressure of 5 mbar or less.

A solid-state imaging device includes: a plurality of pixels each including a first electrode, an organic photoelectric conversion film, and a second electrode in this order on a substrate, the organic photoelectric conversion film including a first inclined surface on a side wall; and a first sealing film formed, on the plurality of pixels, to cover the side wall of the organic photoelectric conversion film and the second electrode.

The present disclosure relates to a conjugated polymer and a perovskite solar cell including the same, more particularly to a conjugated polymer capable of improving moisture stability and thermal stability. When the conjugated polymer according to the present disclosure is used in an organic electronic device, superior efficiency can be maintained for a long period of time.

A method for manufacturing a photovoltaic device includes fabricating a first photovoltaic device portion with a first perovskite material layer having a first face, and fabricating a second photovoltaic device portion with a second perovskite material layer having a second face. Then first photovoltaic device portion and the second photovoltaic device portion are arranged such that the first face is in contact with the second face. Finally, the first photovoltaic device portion and second photovoltaic device portion are compressed at a pressure sufficient to fuse the first perovskite material to the second perovskite material.

The complex comprising one or more of the compound represented by general formula: RPb.sub.n1X.sub.m1 (wherein R is a cation represented by R.sup.1NH.sub.3.sup.+ (wherein R.sup.1 represents a univalent substituted or unsubstituted hydrocarbon group), or the following formula: ##STR00001##
(wherein R.sup.2 represents a hydrogen atom, or a univalent substituted or unsubstituted hydrocarbon group); X is the same or different, and each represents a halogen atom; n1 is 0.8 to 1.2; and m1 is 2.8 to 3.2, or the compound represented by general formula: R.sub.2Pb.sub.n2X.sub.m2 wherein R and X are as defined above; n2 is 2.8 to 3.2; and m2 is 7.7 to 8.3; and one or more dimethylformamide molecules is capable of decreasing the stirring time upon dissolution in an organic solvent such as DMSO, as well as decreasing the hysteresis and improving the solar cell characteristics (in particular, photoelectric conversion efficiency) when the complex is applied to a perovskite layer.

A method of manufacturing a perovskite multilayered structure includes providing a substrate, forming a first perovskite layer on the substrate, forming a second perovskite layer by a reaction between the halogen compounds and at least one of the metal halides, the metal oxides, or the metal sulfides.

A hole transporting material comprises a conductive polymer coil, and a plurality of transition metal oxide particles, which suspended and dispersed in the conductive polymer coil. Wherein the transition metal oxide particles are formed in the conductive polymer coil by a sol-gel reaction. The invention also disclosed a method of manufacturing a hole transporting material and an organic photodiode. The hole transporting material of the present invention can has a good match with an electron donor material of an active layer, so that the organic photodiode including the hole transporting material said above can have better power conversion efficiency.