An imaging device including: a semiconductor substrate having a first surface and a second surface opposite to the first surface; a microlens located closer to the first surface than to the second surface; and a first photoelectric converter located between the first surface and the microlens. The first photoelectric converter includes a first electrode, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that converts light into electric charges. The first photoelectric converter is the closest of any photoelectric converter existing between the first surface and the microlens to the first surface. The imaging device includes no photodiode as a photoelectric converter, and a focal point of the microlens is located below a lowermost surface of the photoelectric conversion layer.

An imaging device including: a semiconductor substrate having a first surface and a second surface opposite to the first surface; a microlens located closer to the first surface than to the second surface; and a first photoelectric converter located between the first surface and the microlens. The first photoelectric converter includes a first electrode, a second electrode, and a photoelectric conversion layer that is located between the first electrode and the second electrode and that converts light into electric charges. The first photoelectric converter is the closest of any photoelectric converter existing between the first surface and the microlens to the first surface. The imaging device includes no photodiode as a photoelectric converter, and a focal point of the microlens is located below a lowermost surface of the photoelectric conversion layer.

A flexible substrate material having opposed front and back sides and extending in an X-Y plane, the front side being provided with a first electrode layer and further provided with at least one thin film to form at least one thin film device stack; the thin film device stack extending from the X-Y plane in a Z direction perpendicular to the X-Y plane to a distance T; the substrate material having at least one protective structure applied to at least one of the substrate material sides, the first electrode layer and the at least one thin film; the at least one protective structure extending in the Z direction to a distance S from the X-Y plane, the distance S being greater than the distance T.

The present invention relates to a method for manufacturing a photovoltaic device comprising: —forming a porous first conducting layer on one side of a porous insulating substrate, —coating the first conducting layer with a layer of grains of a doped semiconducting material to form a structure, —performing a first heat treatment of the structure to bond the grains to the first conducting layer, —forming electrically insulating layers on surfaces of the first conducting layer, —forming a second conducting layer on an opposite side of the porous insulating substrate, —applying a charge conducting material onto the surfaces of the grains, inside pores of the first conducting layer, and inside pores of the insulating substrate, and—electrically connecting the charge conducting material to the second conducting layer.

A display device having a photosensing function is provided. A display device having a biometric authentication function typified by fingerprint authentication is provided. A display device having a touch panel function and a biometric authentication function is provided. The display device includes a first substrate, a light guide plate, a first light-emitting element, a second light-emitting element, and a light-receiving element. The first substrate and the light guide plate are provided to face each other. The first light-emitting element and the light-receiving element are provided between the first substrate and the light guide plate. The first light-emitting element has a function of emitting first light through the light guide plate. The second light-emitting element has a function of emitting second light to a side surface of the light guide plate. The light-receiving element has functions of receiving the first light and converting the first light into an electric signal and functions of receiving the second light and converting the second light into an electric signal. The first light includes visible light, and the second light includes infrared light.

The present invention aims to provide a solar cell that is excellent in photoelectric conversion efficiency, suffers little degradation during encapsulation (initial degradation), and has excellent durability. The present invention relates to a solar cell including: a laminate having an electrode, a counter electrode, and a photoelectric conversion layer disposed between the electrode and the counter electrode; and an inorganic layer covering the counter electrode to encapsulate the laminate, the photoelectric conversion layer including an organic-inorganic perovskite compound represented by the formula: R-M-X.sub.3, R representing an organic molecule, M representing a metal atom, X representing a halogen atom or a chalcogen atom, the inorganic layer containing a metal oxide, a metal nitride, or a metal oxynitride.

The present technology relates to an imaging device, a manufacturing device, and a manufacturing method capable of preventing a substance such as hydrogen from entering and preventing change in performance. The imaging device includes an organic photoelectric conversion film, an upper electrode provided in an upper portion of the organic photoelectric conversion film, a lower electrode provided in a lower portion of the organic photoelectric conversion film, and a metal thin film provided between the organic photoelectric conversion film and the upper electrode or between the organic photoelectric conversion film and the lower electrode. The metal thin film is provided between the organic photoelectric conversion film and the upper electrode. The upper electrode is formed of an oxide semiconductor, a metal oxide, and the metal thin film. The present technology can be applied to a vertical spectral imaging device.

Methods of patterning a layer of a photonic device are provided using stamps or masks derived from pre-written optical media discs. One method comprises pressing a stamp on a surface of a layer of a photonic device, the stamp comprising a stamping surface which defines a negative replica of a quasi-random pattern of nanostructures defined in a recording layer of a pre-written optical media disc, for a period of time sufficient to imprint the quasi-random pattern of nanostructures defined in the recording layer of the pre-written optical media disc onto the surface of the layer of the photonic device; and removing the stamp. The stamps, the masks, and the photonic devices comprising the patterned layers are also provided.

An object of the present invention is to provide a solar cell that is excellent in photoelectric conversion efficiency, suffers little degradation during encapsulation (initial degradation), has high-temperature durability, and is excellent in temperature cycle resistance. The present invention provides a solar cell including: a laminate having an electrode, a counter electrode, and a photoelectric conversion layer disposed between the electrode and the counter electrode; and an encapsulation material covering the counter electrode to encapsulate the laminate, the photoelectric conversion layer including an organic-inorganic perovskite compound represented by the formula: R-M-X.sub.3, R representing an organic molecule, M representing a metal atom, X representing a halogen atom or a chalcogen atom, the encapsulation material including a (meth)acrylic resin having a C atom/O atom ratio of 4 or more in the molecule.

An object of the present invention is to provide a solar cell that is excellent in photoelectric conversion efficiency, suffers little degradation during encapsulation (initial degradation), has high-humidity durability, and is excellent in temperature cycle resistance. The present invention provides a solar cell including: a laminate having an electrode, a counter electrode, and a photoelectric conversion layer disposed between the electrode and the counter electrode; and an encapsulation material covering the counter electrode to encapsulate the laminate, the photoelectric conversion layer including an organic-inorganic perovskite compound represented by the formula: R-M-X.sub.3, R representing an organic molecule, M representing a metal atom, X representing a halogen atom or a chalcogen atom, the encapsulation material including a resin having at least one skeleton selected from the group consisting of polyisobutylene, polyisoprene, and polybutadiene.