An organic/inorganic composite structure includes a silicon substrate and a conductive polymer layer. The silicon substrate includes a plurality of microstructures disposed on a surface of the silicon substrate. The conductive polymer layer is disposed on the plurality of microstructures. A spaced distance is between the conductive polymer layer and the surface of the silicon substrate.

A display apparatus having a photosensing function is provided. The display apparatus includes a first pixel circuit and a second pixel circuit. The first pixel circuit includes a light-receiving device, a first transistor, and a second transistor. The second pixel circuit includes a light-emitting device. The light-receiving device includes a first pixel electrode, an active layer, and a common electrode. The light-emitting device includes a second pixel electrode, a light-emitting layer, and the common electrode. The active layer is positioned over the first pixel electrode and includes a first organic compound. The light-emitting layer is positioned over the second pixel electrode and includes a second organic compound different from the first organic compound. The common electrode includes a portion overlapping with the first pixel electrode with the active layer therebetween and a portion overlapping with the second pixel electrode with the light-emitting layer therebetween. The first transistor includes low-temperature polysilicon as a semiconductor layer and the second transistor includes a metal oxide as a semiconductor layer.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

A semiconductive component with a layer system includes at least one layer comprising a compound of the general formula (I) or (II). ##STR00001##

The present invention relates to the field of organic electronics, such as OLEDs, OPVs and organic photo detectors. It particularly provides intermediates and materials suitable for manufacturing such organic electronics, to specific manufacturing methods and to specific uses.

Various embodiment include optical and optoelectronic devices and methods of making same. Under one aspect, an optical device includes an integrated circuit having an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions. Under another aspect, a film includes a network of fused nanocrystals, the nanocrystals having a core and an outer surface, wherein the core of at least a portion of the fused nanocrystals is in direct physical contact and electrical communication with the core of at least one adjacent fused nanocrystal, and wherein the film has substantially no defect states in the regions where the cores of the nanocrystals are fused. Additional devices and methods are described.

An organic semiconductor device with low driving voltage is provided. The organic semiconductor device includes a layer containing an organic compound between a pair of electrodes. The layer containing an organic compound includes a hole-transport region. The hole-transport region includes a first layer and a second layer. The first layer is positioned between the anode and the second layer. When a potential gradient of a surface potential of an evaporated film is set as GSP (mV/nm), a value obtained by subtracting GSP of an organic compound in the second layer from GSP of an organic compound in the first layer is less than or equal to 20 (mV/nm).

The present invention provides an array substrate and a display panel. The array substrate comprises a base substrate comprising a first surface and a second surface which is opposite to the first surface, and a pixel circuit arranged on the first surface of the base substrate, wherein the array substrate further comprises a driving circuit, which is arranged on the second surface of the base substrate and is in signal connection with the pixel circuit. The present invention further provides a display panel comprising the array substrate. In the present invention, the driving circuit provides an electrical drive signal required for display to the pixel circuit, and both the driving circuit and the pixel circuit are integrated on the base substrate of the array substrate, thereby improving the degree of integration of the array substrate and reducing the total volume of the display panel.

Provided are single photon devices, single photon emitting and transferring apparatuses, and methods of manufacturing and operating the single photon devices. The single photon device includes a carrier transport layer disposed on a conductive substrate and at least one quantum dot disposed on the carrier transport layer. A single photon emitting and transferring apparatus includes a single photon device, an element that injects a single charge into the single photon device described above, a light collecting unit that collects light emitted from the single photon device, and a light transfer system that transmits light collected by the light collecting unit to the outside.

Embodiments of forming an image sensor with an organic photodiode are provided. The organic photodiode uses dual electron-blocking layers formed next to the anode of the organic photodiode to reduce dark current. By using dual electron-blocking layers, the values of highest occupied molecular orbital (HOMO) for the neighboring anode layer and the organic electron-blocking layer are matched by one of the dual electron-blocking layers to form a photodiode with good performance. The values of the lowest occupied molecular orbital (LOMOs) of the dual electron-blocking layers are selected to be lower than the neighboring anode layer to reduce dark current.