The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX.sub.3 and a second layer that includes a perovskite-like material defined by at least one of A′.sub.2B′X′.sub.4, A′.sub.3B′.sub.2X′.sub.9, A′B′X′.sub.4, A′.sub.2B′X′.sub.6, and/or A′.sub.2AB′.sub.2X′.sub.7, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A′ is a third cation, B′ is a fourth cation, X′ is a second anion, and A′ is different than A.

The present disclosure relates to a composition that includes a first layer that includes a perovskite defined by ABX.sub.3 and a second layer that includes a perovskite-like material defined by at least one of A′.sub.2B′X′.sub.4, A′.sub.3B′.sub.2X′.sub.9, A′B′X′.sub.4, A′.sub.2B′X′.sub.6, and/or A′.sub.2AB′.sub.2X′.sub.7, where the first layer is adjacent to the second layer, A is a first cation, B is a second cation, X is a first anion, A′ is a third cation, B′ is a fourth cation, X′ is a second anion, and A′ is different than A.

Provided is a novel method for producing a laminate that serves as an electron transport layer and an optically transparent electrode layer of a perovskite solar cell having, in the following order, an optically transparent electrode layer, an electron transport layer, a perovskite crystal layer, a hole transport layer, and a current collecting layer. The method involves forming a titanium oxide layer that serves as the electron transport layer on a member that serves as the optically transparent electrode layer by utilizing said member for cathode polarization in a treatment liquid containing a Ti component.

An encapsulation method of a display panel, a display panel and a display device are disclosed. The encapsulation method of the display panel includes: forming at least one thin film encapsulation inorganic material layer on a thin film encapsulation region of a display substrate; forming a photoresist pattern on the at least one thin film encapsulation inorganic material layer; and etching the at least one thin film encapsulation inorganic material layer by using the photoresist pattern as a mask to form a thin film encapsulation inorganic layer including a first opening pattern.

Embodiments of the disclosed subject matter provide a vapor distribution manifold that ejects organic vapor laden gas into a chamber and withdraws chamber gas, where vapor ejected from the manifold is incident on, and condenses onto, a deposition surface within the chamber that moves relative to one or more print heads in a direction orthogonal to a platen normal and a linear extent of the manifold. The volumetric flow of gas withdrawn by the manifold from the chamber may be greater than the volumetric flow of gas injected into the chamber by the manifold. The net outflow of gas from the chamber through the manifold may prevent organic vapor from diffusing beyond the extent of the gap between the manifold and deposition surface. The manifold may be configured so that long axes of delivery and exhaust apertures are perpendicular to a print direction.

Disclosed is a building blocks method for low-cost fabrication of single crystal organometallic perovskite materials with pseudo crystallized hole transporting material layer. This method uses self-assembled molecular monolayers SAM as building blocks. This approach enables creation of defect-free perovskite crystals with desired morphology and crystallinity in a controlled way. Additionally, the crosslinked molecular layers SAM play a role of hole transporting materials HTM and encapsulation against diffusion of metal atoms and gas molecules, thus enhancing the stability of the perovskite materials. This method is cost effective and can be scaled up.

Provided are P-type semiconductor layer, P-type multilevel element, and manufacturing method for the element. The P-type multilevel element comprises a gate electrode, an active structure overlapping the gate electrode, a gate insulating layer disposed between the gate electrode and the active structure, and source and drain electrodes electrically connected to both ends of the active structure, respectively. The active structure has a first P-type active layer, a second P-type active layer, and a barrier layer disposed between the first P-type active layer and the second P-type active layer. A threshold voltage for forming a channel in the first P-type active layer and a threshold voltage for forming a channel in the second P-type active layer have different values.

Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

Disclosed are a memristor device, a method of fabricating the same, a synaptic device including a memristor device, and a neuromorphic device including a synaptic device. The disclosed memristor device may comprise a first electrode, a second electrode disposed to be spaced apart from the first electrode; and a resistance changing layer including a copolymer between the first electrode and the second electrode. The copolymer may be a copolymer of a first monomer and a second monomer, and the first polymer formed from the first monomer may have a property that diffusion of metal ions is faster than that of the second polymer formed from the second monomer. The second polymer may have a lower diffusivity of metal ions as compared with the first polymer. The first monomer may include vinylimidazole (VI). The second monomer may include 1,3,5-trivinyl-1,3,5-trimethylcyclotrisiloxane (V3D3). The copolymer may include p(V3D3-co-VI).

A display apparatus includes a light-emitting device with improved reliability while maintaining liquid-repellent properties of peripheral layers after plasma irradiation. The display apparatus includes: a substrate; a pixel electrode disposed on the substrate; a pixel defining layer disposed on the pixel electrode and having an opening that exposes a central portion of the pixel electrode; and a liquid-repellent layer disposed on the pixel defining layer and having an upper surface having a concavo-convex structure.