H10K71/40

Display panel and method for manufacturing the same

A display panel has an irregular display area and includes a substrate, a first electrode layer, a first organic-material layer, and a second electrode layer. The first electrode layer is disposed on the substrate. The first organic-material layer is disposed on the first electrode layer, in which the first organic-material layer includes a first portion and a second portion which are connected to each other. The second electrode layer is disposed on the first electrode layer. The first organic-material layer is configured to produce electroluminescence phenomenon by a bias applied by the first and second electrode layers, and the first portion has brightness less than that of the second portion under the bias.

Electronic devices using organic small molecule semiconducting compounds

Small organic molecule semi-conducting chromophores containing a halogen-substituted core structure are disclosed. Such compounds can be used in organic heterojunction devices, such as organic small molecule solar cells and transistors.

Ionic compound, and coating composition and organic light-emitting device comprising same

The present disclosure relates to an ionic compound, and a coating composition and an organic light emitting device including the same.

Ionic compound, and coating composition and organic light-emitting device comprising same

The present disclosure relates to an ionic compound, and a coating composition and an organic light emitting device including the same.

Display panel

An embodiment of the present disclosure provides a display panel having a non-rectangular display region. The display panel includes a substrate, a pixel definition layer, a first organic material layer, and a second organic material layer. The pixel definition layer is disposed on the substrate, and defines a first pixel area and a second pixel area on the substrate. The first organic material layer is disposed in the first pixel area and has a first light-emitting region. The second organic material layer is disposed in the second pixel area and has a second light-emitting region. The first organic material layer and the second organic material layer have the same material and the same vertical projection area on the substrate, and the vertical projection area of the first light-emitting region on the substrate is smaller than the vertical projection area of the second light-emitting region on the substrate.

Display panel

An embodiment of the present disclosure provides a display panel having a non-rectangular display region. The display panel includes a substrate, a pixel definition layer, a first organic material layer, and a second organic material layer. The pixel definition layer is disposed on the substrate, and defines a first pixel area and a second pixel area on the substrate. The first organic material layer is disposed in the first pixel area and has a first light-emitting region. The second organic material layer is disposed in the second pixel area and has a second light-emitting region. The first organic material layer and the second organic material layer have the same material and the same vertical projection area on the substrate, and the vertical projection area of the first light-emitting region on the substrate is smaller than the vertical projection area of the second light-emitting region on the substrate.

THIN-FILM LIGHT-EMITTING DEVICE INCLUDING CHARGE GENERATING JUNCTION LAYER AND METHOD OF FABRICATING THIN-FILM LIGHT-EMITTING DEVICE

The present invention discloses a thin-film light-emitting device including a charge generating junction layer and a method of fabricating the thin-film light-emitting device. The thin-film light-emitting device including a charge generating junction layer according to one embodiment of the present invention includes a negative electrode; at least one light-emitting unit formed on the negative electrode and including a charge generating junction layer, an electron injection/transport layer, a thin-film light-emitting layer, and a hole injection/transport layer in a sequential order; and a negative electrode formed on the light-emitting unit. In the thin-film light-emitting device of the present invention, the charge generating junction layer has a layer-by-layer structure in which a p-type semiconductor layer and an n-type semiconductor layer are formed, and the concentration of oxygen vacancies at the interface between the p-type and n-type semiconductor layers is adjusted by annealing the n-type semiconductor layer.

OPTIMUM WARP IN ORGANIC SUBSTRATES
20210367152 · 2021-11-25 ·

An organic substrate and method of making with optimal thermal warp characteristics is disclosed. The organic substrate has one or more top layers and one or more bottom layers. A chip footprint region is a surface region on each of the top and bottom layers that is defined as the projection of one or more semiconductor chips (chips) on the surface of each of the top and bottom layers. One or more top removal patterns are located on and may or may not remove material from the surface of one or more of the top layers within the chip footprint region of the respective top layer. One or more bottom removal patterns are located on and remove material from the surface of one or more of the bottom layers outside the chip footprint region of the respective bottom layer. The removal of the material from one or more of the top layers and/or bottom layers changes and optimizes a thermal warp of the organic substrate. In some embodiments, a Shape Inversion Temperature (SIT) of the substrate is made equal to or above a reflow temperature.

Imaging element, method of manufacturing imaging element, and imaging device
11183540 · 2021-11-23 · ·

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×10.sup.10 s.sup.−1 to 1×10.sup.16 s.sup.−1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.

TECHNIQUES FOR THERMAL TREATMENT OF ELECTRONIC DEVICES

Apparatus and techniques are described herein for use in manufacturing electronic devices. such as can include organic light emitting diode (OLED) devices. Such apparatus and techniques can include using one or more modules having a controlled environment. For example, a substrate can be received from a printing system located in a first processing environment, and the substrate can be provided a second processing environment, such as to an enclosed thermal treatment module comprising a controlled second processing environment. The second processing environment can include a purified gas environment having a different composition than the first processing environment.