A method of fabricating a display device may include forming a preliminary first pixel definition layer by coating a first material on a base substrate including a first electrode, forming a first pixel definition layer by forming a first opening in the preliminary first pixel definition layer, the first opening exposing the first electrode, performing a plasma treatment on the first pixel definition layer, forming a preliminary organic layer by providing a first organic material, forming a preliminary second pixel definition layer by coating a second material on the first pixel definition layer, forming a second pixel definition layer by forming a second opening in the preliminary second pixel definition layer, the second opening overlapping with the first opening, and forming an organic layer by providing a second organic material. A thickness of the organic layer may be greater than a thickness of the preliminary organic layer.

A display panel, a display device, and a method for manufacturing the display panel. The display panel includes a base substrate. The base substrate includes a display area and a functional area, the functional area includes a light-transmitting region, the light-transmitting region includes a plurality of pixel units, and the plurality of pixel units is capable of emitting white light. Each of the pixel units includes at least one sub-pixel, each of the pixel units further includes a cathode, orthographic projections of a plurality of cathodes onto the base substrate are separated from each other, and an orthographic projection of an effective light-emitting area of each of the sub-pixels onto the base substrate is within the orthographic projection of the cathode of a corresponding one of the pixel units onto the base substrate.

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I]; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I] selected from Cu.sup.+, Ag.sup.+ and Au.sup.+; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X].

The present disclosure describes an organic-inorganic metal-halide-based semiconducting material that melts at lower temperatures compared to conventional inorganic semiconductors. The hybrid material is structurally engineered to easily access both crystalline and amorphous glassy states, with each state offering distinct physical properties.

The present disclosure describes an organic-inorganic metal-halide-based semiconducting material that melts at lower temperatures compared to conventional inorganic semiconductors. The hybrid material is structurally engineered to easily access both crystalline and amorphous glassy states, with each state offering distinct physical properties.

The present application discloses a perovskite layer, a method for preparing a perovskite layer, a perovskite-layer solar cell and a perovskite-layer-solar-cell assembly, which relates to the technical field of photovoltaics, and is used to prepare a perovskite layer that can completely cover the substrate and has few defects. The method for preparing a perovskite layer includes: providing a substrate; forming perovskite seed crystals on the substrate; soaking the perovskite seed crystals into a perovskite solution; by the effect of the perovskite seed crystals, the perovskite seed crystals growing into a perovskite thin film; and performing annealing treatment to the perovskite thin film, to form the perovskite layer. The perovskite layer and the preparing method thereof according to the present application are used for the fabrication of a solar cell.

The present application discloses a perovskite layer, a method for preparing a perovskite layer, a perovskite-layer solar cell and a perovskite-layer-solar-cell assembly, which relates to the technical field of photovoltaics, and is used to prepare a perovskite layer that can completely cover the substrate and has few defects. The method for preparing a perovskite layer includes: providing a substrate; forming perovskite seed crystals on the substrate; soaking the perovskite seed crystals into a perovskite solution; by the effect of the perovskite seed crystals, the perovskite seed crystals growing into a perovskite thin film; and performing annealing treatment to the perovskite thin film, to form the perovskite layer. The perovskite layer and the preparing method thereof according to the present application are used for the fabrication of a solar cell.

A method for manufacturing a light emitting device includes: providing a base layer and forming an electron transport layer including first and second transport regions. The forming of the electron transport layer includes: applying an electron transport composition including a metal oxide and a photoacid generator such that first and second preliminary transport regions are formed, and irradiating the first and second preliminary transport regions with light, and in the irradiating with the light, the amount of light per unit area irradiated on the first preliminary transport region is different from the amount of light per unit area irradiated on the second preliminary transport region.

A method of manufacturing a display device, includes preparing a substrate, forming a plurality of pixel electrodes on the substrate, forming a pixel-defining layer covering edge portions of the plurality of pixel electrodes and defining a plurality of exposed upper surfaces of the plurality of pixel electrodes, and forming an emission layer on the plurality of exposed upper surfaces of the plurality of pixel electrodes. The forming of the emission layer includes forming an emission layer by ejecting ink onto the plurality of exposed upper surfaces in an order from an exposed upper surface having a largest area to an exposed upper surface having a smallest area.

A method of manufacturing a display device, includes preparing a substrate, forming a plurality of pixel electrodes on the substrate, forming a pixel-defining layer covering edge portions of the plurality of pixel electrodes and defining a plurality of exposed upper surfaces of the plurality of pixel electrodes, and forming an emission layer on the plurality of exposed upper surfaces of the plurality of pixel electrodes. The forming of the emission layer includes forming an emission layer by ejecting ink onto the plurality of exposed upper surfaces in an order from an exposed upper surface having a largest area to an exposed upper surface having a smallest area.