Provided are an organic-inorganic hybrid perovskite nanocrystal particle light emitting body having a gradient structure, a method of producing the same, and a light emitting element using the same. The organic-inorganic hybrid perovskite nanocrystal particle light emitting body having a gradient structure includes an organic-inorganic hybrid perovskite nanocrystal which is dispersible in an organic solvent, wherein the nanocrystal has a gradient composition in which a composition is changed from the center thereof to the outside. Therefore, the gradual change in the content in the nanocrystal may be used to uniformly adjust a fraction in the nanocrystal, to reduce surface oxidation, and to improve exciton confinement in the perovskite present in large quantities inside the nanocrystal, and thus light emission efficiency may be improved and durability and stability may be increased.

The present invention provides a hole transport material, a preparation method thereof, and an electroluminescent device. Through ingenious molecular design, a xanthracene structure is combined with different electron-donating groups to synthesize a series of hole transport materials with a suitable highest occupied molecular orbital (HOMO) energy level and a suitable lowest unoccupied molecular orbital (LUMO) energy level, and a series of high-performance display devices can be manufactured using the hole transport materials provided by the present invention.

An apparatus for manufacturing a display device, includes: a heater which generates heat; a pressing member which contacts a target object of a display device to transfer the heat to the target object; a body connected to each of the heater and the pressing member and through which the heat from the heater is provided to the pressing member; and a first housing cover extended from the body to surround the pressing member and the body in a plan view. Engagement of the first housing cover with the target object defines an internal space of the first housing cover having a temperature, and measurement by the apparatus, of the temperature of the internal space, controls bonding of layers of the target object to each other.

The present disclosure describes solution methods for manufacturing perovskite halide films for use in solar cells. The methods include the use of additives that facilitate the formation of transitory, intermediate films that are later transformed into the final target perovskite halide films, such that the final films provide improved physical characteristics and operational performance.

The present invention relates to a composition for an insulator of a thin film transistor, an insulator and an organic thin film transistor comprising the same. The insulator of a thin film transistor prepared with the composition of the present invention displays an excellent permittivity along with a low surface energy, and the organic thin film transistor comprising the same displays an improved organic semiconductor morphology formed on the top surface of the insulator, so that it can bring the effect of reducing leakage current density, improving charge carrier mobility, and improving current on/off ratio.

A photovoltaic device is provided. The photovoltaic device includes a metal salt layer disposed adjacent to a perovskite layer. The metal salt layer diffuses into the perovskite layer. Methods for fabricating the photovoltaic device are also provided.

The present application provides a method for preparing a perovskite film, and a related perovskite film, solar cell and solar cell device thereof. The preparation method may include the steps of (1) providing a target material comprising the following elements: lead, a halogen, and one or more alkali metals; (2) sputtering using the target material in step (1), where a process gas is a noble gas, optionally, argon, so as to obtain a film; (3) subjecting the film obtained in step (2) to a chemical bath treatment, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and (4) sputtering on the film obtained in step (3) using a tin metal, where a process gas comprises a noble gas, optionally, a mixture of argon and a halogen gas, so as to obtain the perovskite film.

The present invention relates to a method for manufacturing a photovoltaic device comprising: —forming a porous first conducting layer on one side of a porous insulating substrate, —coating the first conducting layer with a layer of grains of a doped semiconducting material to form a structure, —performing a first heat treatment of the structure to bond the grains to the first conducting layer, —forming electrically insulating layers on surfaces of the first conducting layer, —forming a second conducting layer on an opposite side of the porous insulating substrate, —applying a charge conducting material onto the surfaces of the grains, inside pores of the first conducting layer, and inside pores of the insulating substrate, and—electrically connecting the charge conducting material to the second conducting layer.

Active emissive layers (e.g., of a light-emitting electrochemical cell (LEC)) are provided and can comprise zero-dimensional (0D) perovskite material in combination with a three-dimensional (3D) perovskite material, as well as electroluminescent devices (e.g., LECs) utilizing such active emissive layers and methods of fabricating and using such active emissive layers and electroluminescent devices. The 0D perovskite material can be incorporated into a matrix film of the 3D perovskite material. The 0D perovskite material can be, for example, perovskite nanocrystals (PNCs). The 0D perovskite material can be, for example, Cs.sub.4PbBr.sub.6, and the 3D perovskite material can be, for example, CsPbBr.sub.3.

A method including depositing a lead halide precursor ink onto a substrate; drying the lead halide precursor ink to form a first thin film; annealing the first thin film; and forming a perovskite material layer, wherein forming the perovskite material layer includes: depositing a benzylammonium halide precursor ink onto the first thin film; drying the benzylammonium halide precursor ink; depositing a formamidinium halide precursor ink onto the benzylammonium halide precursor ink; drying the formamidinium halide precursor ink to form a second thin film; and annealing the second thin film.