A forming method for a silicon-based display panel includes providing a silicon substrate having a display region and a peripheral region surrounding the display region, providing a first set of photomasks corresponding to the display region, using the first set of photo masks in an exposure process of the display region, providing a second set of photomasks corresponding to the peripheral region, and using the second set of photomasks in an exposure process of the peripheral region. The exposure process of the display region and the exposure process of the peripheral region are different process steps. According to the forming method for the silicon-based display panel, splicing of pixel patterns in the display region is not carried out, so that the yield and the display effect are improved.

An organic thin film transistor (OTFT), in particular thin-film field-effect transistor (OFET), that includes a substrate, a source electrode, a drain electrode, a gate electrode arranged in a top gate arrangement, and an organic semiconductor functional layer. The source electrode, the drain electrode, and the gate electrode are arranged in a coplanar layer structure. The organic thin-film transistor has an intermediate layer for the capacitive decoupling of the gate electrode from the source electrode and/or from the drain electrode.

An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),

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The present disclosure provides a light emitting diode, a method of preparing the same, and a display device. The light emitting diode includes an anode, a quantum dot light emitting layer, an electron transport layer, a cathode, and a transition layer located between the electron transport layer and the cathode, the cathode including a transparent conductive oxide material, and a material of the transition layer having a work function W.sub.F between an LUMO of a material of the electron transport layer and a work function W.sub.F of a material of the cathode.

Graphene material-metal nanocomposites having a metal core with one or more graphene material layers disposed on the metal core. The nanocomposites may be formed by contacting metal nanowires and one or more graphene material and/or graphene material precursor in a dispersion. The nanocomposites may be used for form inks for coating or printing conductive elements or as conductors in various articles of manufacture. An article of manufacture may be an electrical device or an electronic device.

A method of forming a metal silicide nanowire network that includes multiple metal silicide nanowires fused together in a disorderly arrangement on a substrate. The metal silicide nanowire network can be formed by applying a solution that contains silicon nanowires onto the substrate, forming a metal layer on the silicon nanowires, and performing a silicidation anneal such that the metal silicide nanowires are fused together in a disorderly arrangement, forming a mesh. After the silicidation anneal is performed, any unreacted silicon or metal can be selectively removed.

[Problem] To provide a method for manufacturing an element which does not lead to the occurrence of a short due to etching, and which suppresses the deterioration of a photoelectric conversion layer. [Solution] An element manufacturing method, wherein the method includes the following steps which are performed on an element material including an electrode formed on a substrate, the electrode having a first electrode and a second electrode which are separated from each other, and a photoelectric conversion layer formed in a region that includes the first electrode and the second electrode: a step in which a first back-side electrode and a second back-side electrode are formed at positions on the photoelectric conversion layer corresponding to a first electrode and a second electrode, wherein the first back-side electrode and the second back-side electrode are not connected; a step in which etching is performed using the first back-side electrode and the second back-side electrode as a mask; and a connection electrode formation step in which a connection electrode for connecting the first back-side electrode and the second back-side electrode is formed.

An imaging element includes a photoelectric conversion section 23 including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked. An inorganic oxide semiconductor material layer 23B including a first layer 23C and a second layer 23D, from side of the first electrode, is formed between the first electrode 21 and the photoelectric conversion layer 23A, and ρ.sub.1≥5.9 g/cm.sup.3 and ρ.sub.1−ρ.sub.2≥0.1 g/cm.sup.3 are satisfied, where ρ.sub.1 is an average film density of the first layer 23C and ρ.sub.2 is an average film density of the second layer 23D in a portion extending for 3 nm from an interface between the first electrode 21 and the inorganic oxide semiconductor material layer 23B.

The present disclosure provides a printable curved-surface perovskite solar cell, including a curved-surface conductive substrate, a porous electron transport layer, a porous insulation layer, a porous back electrode layer and a perovskite filler. The curved-surface conductive substrate includes a curved-surface transparent substrate and a conductive layer deposited on the curved-surface transparent substrate. The porous electron transport layer, the porous insulation layer and the porous back electrode layer are sequentially deposited on the conductive layer from bottom to top. The perovskite filler is filled in pores of the porous electron transport layer, the porous insulation layer and the porous back electrode layer. The present disclosure further provides a method for preparing the printable curved-surface perovskite solar cell.

The manufacturing method provided by this application comprises: providing a substrate on which a plurality of pixel defining layers are arranged at intervals; disposing a hole injection layer on the substrate; disposing a hole transport layer on the hole injection layer; disposing an organic light emitting layer on the hole transport layer; disposing an electron transport layer on the organic light emitting layer and the pixel defining layers; and disposing a cathode metal layer on the electron transport layer, wherein the cathode metal layer comprises a first area located above the pixel defining layers; and processing the cathode metal layer in the first area.