A transparent display device includes a substrate on which a pixel including an emission area and a first transparent area is defined, and a light-emitting diode provided in the emission area and including a first electrode, a light-emitting layer, and a second electrode. The transparent display device further includes an anti-deposition layer provided in the first transparent area. The height of the light-emitting layer at an edge area of the emission area is higher than the height of the light-emitting layer at a center area of the emission area. Further, the second electrode is disposed over the entire surface excluding the first transparent area, and the height of the anti-deposition layer at an edge area of the first transparent area is higher than the height of the anti-deposition layer at a center area of the first transparent area.

Methods of annealing and/or sintering a transparent conductive oxide (TCO) film disclosed, and wherein the TCO film comprises indium tin oxide film (ITO), fluorine-doped tin film (FTO), indium doped zinc oxide (IZO), or aluminum-doped zinc oxide (AZO). Such methods involve irradiating the TCO film with a light source and where the annealing and/or sintering is selective to the TCO film.

An optoelectronic component on a substrate includes a first and a second electrode. The first electrode is arranged on the substrate and the second electrode forms a counter electrode. At least one photoactive layer system is arranged between these electrodes. The at least one photoactive layer system including at least one donor-acceptor system having organic materials.

The present disclosure relates to the field of manufacturing displays, and provides a method for manufacturing a display substrate, a method for manufacturing a mask plate, and a display device. The method for manufacturing a display substrate comprises: providing a first substrate; providing a mask plate opposite to the first substrate, the mask plate comprising one or more light-transmissive regions, and an electrically conductive material is provided on a surface of the mask plate facing the first substrate; and irradiating a surface of the mask plate facing away from the first substrate with light rays, such that the electrically conductive material is transferred to a surface of the first substrate facing the mask plate, thereby forming an electrically conductive layer having one or more electrically conductive portions, wherein a projection of each of the one or more electrically conductive portions on the mask plate coincides with a respective light-transmissive region.

The present disclosure provides a mask and a manufacturing method thereof, an evaporation method and a display screen, to achieve normal display of an area around such components as an earpiece, a front camera, and sensors on the front of a display screen, and increase the screen-to-body ratio. The mask comprises a substrate provided with at least one opening, an orthographic projection of the opening on a display plane of a display screen to be fabricated coinciding with a display area of the display screen to be fabricated; a shielding part arranged inside the opening, an orthographic projection of the shielding part on the display plane coinciding with an orthographic projection of a component to be shielded in the display screen to be fabricated on the display plane; and a connecting part located between the shielding part and a side wall of the opening.

A switching device structure includes: a first gate structure disposed on a side of a substrate layer; a first buffer layer disposed on a side of the first gate structure and a side of the substrate layer; a first source-drain structure and an oxide semiconductor structure disposed on a side of the first buffer layer away from the substrate layer, the oxide semiconductor structure being in contact with a part of the first source-drain structure; a first insulating layer disposed on a side of the first source-drain structure and a side of the oxide semiconductor structure which are away from the first buffer layer; and a second gate structure and a second source-drain structure disposed on a side of the first insulating layer away from the first buffer layer, the second source-drain structure being electrically connected to the other part of the first source-drain structure.

A display panel and a method of manufacturing the same are provided. The method of manufacturing the display panel includes providing a substrate, and forming other layers on the substrate sequentially. Accordingly, a first via hole, a second via hole, and a third via hole are formed. The first via hole and the second via hole are filled with a flexible material to form a flexible layer and a stress release unit, respectively. Then, a metal layer which fills the third via hole is formed on the interlayer dielectric layer.

The present invention provides an array substrate and a manufacturing method thereof, and a display panel. The manufacturing method of the array substrate includes following steps of: providing a base, wherein the base comprises a non-display region; forming an inorganic film set layer on the base; forming an opening on the inorganic film set layer and forming a patterned source-drain layer, wherein the opening is disposed in the non-display region, and the source-drain layer does not cover or fill the opening; and forming an organic planarization layer on the inorganic film set layer, wherein the organic planarization layer covers the source-drain layer and fills and covers the opening.

In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.

In a method of forming a gate-all-around field effect transistor, a gate structure is formed surrounding a channel portion of a carbon nanotube. An inner spacer is formed surrounding a source/drain extension portion of the carbon nanotube, which extends outward from the channel portion of the carbon nanotube. The inner spacer includes two dielectric layers that form interface dipole. The interface dipole introduces doping to the source/drain extension portion of the carbon nanotube.