A method for fabricating a perovskite film includes the steps of: placing a substrate on a substrate stage in a chamber, the substrate stage configured to rotate around its central axis at a rotation speed; depositing first source materials on the substrate from a first set of evaporation units, each coupled to the side section or the bottom section of the chamber; depositing second source materials on the substrate from a second set of evaporation units coupled to the bottom section, wherein the chamber includes a shield defining two or more zones having respective horizontal cross-sectional areas, which are open and facing the substrate, designated for the two or more evaporation units in the second set. The perovskite film includes multiple unit layers each being formed by one rotation of the substrate stage, and having composition and thickness thereof controlled by adjusting evaporation rates, rotation speed and horizontal cross-sectional areas.

A method of depositing a lateral pattern of a deposition material onto a substrate. The method comprises fabricating a laterally patterned deposition surface on the substrate having one or more deposition regions and one or more non-deposition regions. The method comprises depositing deposition material onto the deposition regions of the deposition surface to form a deposition structure comprising deposited regions and non-deposited regions. Depositing deposition material comprises dissolving the deposition material in a solvent to form a solution, introducing the deposition surface into fluid contact with the solution, varying a temperature of the solution, varying a pressure of the solution; and selectively heating the deposition regions to temperatures greater than the temperature of the solution to cause the deposition material to precipitate from the solution and deposit onto the deposition regions.

The present application discloses a method for preparing quantum dots light-emitting diode, including the following step: providing a base plate, placing the base plate into an inert atmosphere containing active gas, and printing quantum dots ink on a surface of the base plate to prepare a quantum dots light-emitting layer. The method for preparing the quantum dots light-emitting diode provided in the present application changes the film-forming atmosphere of inkjet printing, and prepares the quantum dots light-emitting layer in the inert atmosphere containing active gas, which can improve the device efficiency of the quantum dots light-emitting diode while ensuring the printability of quantum dots ink.

Disclosed is a method of forming a thin film using a surface protection material, the method comprising supplying the surface protection material to the inside of a chamber on which a substrate is placed; purging the interior of the chamber; supplying a doping precursor to the inside of the chamber; purging the interior of the chamber; supplying a first reactant to the inside of the chamber so that the first reactant reacts with the adsorbed doping precursor to form a doping thin film; supplying a dielectric film precursor to the inside of the chamber; purging the interior of the chamber; and supplying a second reactant to the inside of the chamber so that the second reactant reacts with the adsorbed dielectric film precursor to form a dielectric film.

A method for preparing a quantum dot light-emitting diode, including the following steps: providing a substrate, the substrate is a cathode substrate; or the substrate is an anode substrate provided with a quantum dot light-emitting layer, and the quantum dot light-emitting layer is arranged on the anode surface of the anode substrate; placing the substrate in an inert atmosphere containing a first gas, and printing an electron transport material ink on the substrate surface to prepare an electron transport layer; preparing other film layers on the electron transport layer to prepare a quantum dot light-emitting diode, the quantum dot light-emitting diode at least includes the following structure: an anode and a cathode arranged oppositely, a quantum dot light-emitting layer arranged between the anode and the cathode, and an electron transport layer arranged between the quantum dot light-emitting layer and the cathode.

The present teachings relate to various embodiments of an hermetically-sealed gas enclosure assembly and system that can be readily transportable and assemblable and provide for maintaining a minimum inert gas volume and maximal access to various devices and apparatuses enclosed therein. Various embodiments of an hermetically-sealed gas enclosure assembly and system of the present teachings can have a gas enclosure assembly constructed in a fashion that minimizes the internal volume of a gas enclosure assembly, and at the same time optimizes the working space to accommodate a variety of footprints of various OLED printing systems. Various embodiments of a gas enclosure assembly so constructed additionally provide ready access to the interior of a gas enclosure assembly from the exterior during processing and readily access to the interior for maintenance, while minimizing downtime.

Apparatus and techniques are described herein for use in manufacturing electronic devices. Such as can include organic light emitting diode (OLED) devices. Such apparatus and techniques can include using one or more modules having a controlled environment. For example, a substrate can be received from a printing system located in a first processing environment, and the substrate can be provided a second processing environment, such as to an enclosed thermal treatment module comprising a controlled second processing environment. The second processing environment can include a purified gas environment having a different composition than the first processing environment.

To provide an organic photoelectric conversion element, imaging device, and optical sensor having low dark currents, and a method of manufacturing a photoelectric conversion element. Provided is a photoelectric conversion element, including: a first electrode; an organic photoelectric conversion layer disposed in a layer upper than the first electrode, the organic photoelectric conversion layer including one or two or more organic semiconductor materials; a buffer layer disposed in a layer upper than the organic photoelectric conversion layer, the buffer layer including an amorphous inorganic material and having an energy level of 7.7 to 8.0 eV and a difference in a HOMO energy level from the organic photoelectric conversion layer of 2 eV or more; and a second electrode disposed in a layer upper than the buffer layer.

The invention relates to a method for synthesis of films made of light-absorbing material with perovskite-like structure which can be used for fabrication of perovskite solar cells. The method for synthesis of films made of light-absorbing material with perovskite-like structure with a structural formula ACB.sub.3 is characterized by sequential deposition of a layer of a reagent C onto a layer of a reagent AB with a thickness determined by stoichiometry of the reaction followed by the immersion of the layers in a liquid or gaseous medium containing reagent B.sub.2 where component A states for CH.sub.3NH.sub.3.sup.+, (NH.sub.2).sub.2CH.sup.+, C(NH.sub.2).sub.3.sup.+, Cs.sup.+ or a mixture thereof, component B states for Cl.sup.−, Br.sup.−, I.sup.− or a mixture thereof, component C states for metals Sn, Pb, Bi, or their melts, oxides, salts. The technical result achieved using the claimed invention is a simple and fast method for fabrication of a layer of light-absorbing organic-inorganic material with a perovskite-like structure which is homogeneous due to the formation of a film of the intermediate phase AB-B.sub.2 with improved morphology on the surfaces of a large area due to rapid crystallization, which allows the obtained material to be used in solar cells of large area.

The present teachings relate to various embodiments of an hermetically-sealed gas enclosure assembly and system that can be readily transportable and assemblable and provide for maintaining a minimum inert gas volume and maximal access to various devices and apparatuses enclosed therein. Various embodiments of an hermetically-sealed gas enclosure assembly and system of the present teachings can have a gas enclosure assembly constructed in a fashion that minimizes the internal volume of a gas enclosure assembly, and at the same time optimizes the working space to accommodate a variety of footprints of various OLED printing systems. Various embodiments of a gas enclosure assembly so constructed additionally provide ready access to the interior of a gas enclosure assembly from the exterior during processing and readily access to the interior for maintenance, while minimizing downtime.