A graphene semiconductor junction device, having a structure in which a graphene edge does not come into contact with a semiconductor, includes: a substrate; a gate electrode positioned on the substrate; a gate insulating layer that is positioned on the substrate to cover the gate electrode; a graphene layer positioned on the gate insulating layer; a semiconductor layer that is positioned on the graphene layer so as not to be joined to an edge of the graphene layer; a drain electrode positioned on the semiconductor layer; and a source electrode that is positioned on the graphene layer to be separated from the semiconductor layer.

The present invention relates to an organic electroluminescent device comprising an hole injection layer and electron injection layer with zero-valent metal, and a method of manufacturing the same. In particular the present invention relates to an organic electroluminescent device comprising an anode layer, at least one electron transport layer, at least one electron injection layer, a cathode layer, and an emission layer, wherein the emission layer is arranged between the anode layer and the cathode layer, wherein the at least a first electron transport layer and the injection layer are arranged between the emission layer and the cathode layer, wherein the electron injection layer is arranged in direct contact to the first transport electron layer, wherein the first electron transport layer is arranged nearer to the anode layer and the electron injection layer is arranged nearer to the cathode layer, wherein at least the first electron transport layer comprises an organic phosphine matrix compound, and a first zero-valent alkali metal; and the electron injection layer comprises a second zero-valent metal of an alkaline earth metal and/or rare earth metal, and an alkali metal halide.

Embodiments of the present disclosure describe a photodetector and/or photovoltaic device comprising a semiconducting substrate and a solution including at least GQD and PEDOT:PSS, the solution deposited as a layer on the semiconducting substrate. Embodiments of the present disclosure further describe a method of fabricating a photodetector and/or photovoltaic device comprising contacting an amount of GQD with PEDOT:PSS sufficient to form a solution; and depositing the solution as a layer on a semiconducting substrate.

Embodiments of the present disclosure describe a photodetector and/or photovoltaic device comprising a semiconducting substrate and a solution including at least GQD and PEDOT:PSS, the solution deposited as a layer on the semiconducting substrate. Embodiments of the present disclosure further describe a method of fabricating a photodetector and/or photovoltaic device comprising contacting an amount of GQD with PEDOT:PSS sufficient to form a solution; and depositing the solution as a layer on a semiconducting substrate.

A photodetector including graphene and poly(3-hexylthiopene) (P3HT) nanowires is claimed. A method of making the hybrid photodetector is also claimed.

A field effect transistor includes a semiconductor substrate, a first pad layer, carbon nanotubes and a gate structure. The first pad layer is disposed over the semiconductor substrate and comprises a 2D material. The carbon nanotubes are disposed over the first insulating pad layer. The gate structure is disposed over the semiconductor substrate and is vertically stacked with the carbon nanotubes. The carbon nanotubes extend from one side to an opposite side of the gate structure.

A coating composition includes a graphene oxide and a solvent. At least one of a carboxyl group and an epoxide group of the graphene oxide is functionalized by an amine. The amine has an activation energy to an epoxide group of the graphene oxide of about 3 kcal/mol to about 8 kcal/mol. A method of forming a stacked structure using the coating composition is provided. A method of manufacturing a display device using the coating composition is provided.

The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.

An electroluminescent LED device comprising a hole transport layer, an electron transport layer, an active emissive layer between the hole transport layer and the electron transport layer, and carbon dots forming the active emissive layer.

A graphene nanostructure has a nanographene, a conjugated functional group bonded to the nanographene via a pyrazine skeleton, and at least one Br group and/or at least one CN group introduced into the conjugated functional group. A graphene nanostructure preferably has an average size of 1 nm or larger to 100 nm or smaller, a band gap of 0.01 eV or higher to 1.2 eV or lower, and/or a HOMO level of 6.0 eV or higher to 4.0 eV or lower. As the conjugated functional group into which the Br group(s) and/or the CN group(s) are/is introduced, a 4-bromobenzene group, a 4,5-dibromobenzene group, a 5-bromopyridine group, a 5-bromopyrazine group, a benzonitrile group, a phthalonitrile group, or a 2,3-dicyanopyrazine group is desirable.