H10K85/50

Perovskite and other solar cell materials
10916712 · 2021-02-09 · ·

Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes, the active layer having perovskite material and other material such as mesoporous material, interfacial layers, thin-coat interfacial layers, and combinations thereof. The perovskite material may be photoactive. The perovskite material may be disposed between two or more other materials in the photovoltaic device. Inclusion of these materials in various arrangements within an active layer of a photovoltaic device may improve device performance. Other materials may be included to further improve device performance, such as, for example: additional perovskites, and additional interfacial layers.

ORGANIC-INORGANIC HYBRID PEROVSKITES
20210070776 · 2021-03-11 ·

The application relates to organic-inorganic hybrid perovskites of formula (I): [(A).sub.1-2,48p-b(B).sub.3,48p+b].sub.(1+2p-y)/(1+p)(Pb).sub.1-p-m(M).sub.m(X.sup.1).sub.3-y-q(X.sup.2).sub.q (I), and perovskite photovoltaic cells comprising same.

A PHOTOVOLTAIC PANEL AND METHOD OF MANUFACTURING THE SAME
20210090817 · 2021-03-25 ·

A photovoltaic panel (1) is provided, comprising in the order named, a first electrically conductive layer (10), a photo-voltaic layer (20) of a perovskite photovoltaic material, a second electrically conductive layer (30), and a protective coating (40) that at least forms a barrier against moisture. The first electrically conductive layer (10) is partitioned along first partitioning lines (L11, L12) extending in a first direction (D1). The second electrically conductive layer (30) and the photovoltaic layer (20) are partitioned along second partitioning lines (L21, L22) extending in the first direction (D1) and along third partitioning lines (L31, L32) extending in a second direction (D2) different from the first direction (D11). The first and the second partitioning lines alternate each other and a space (50) is defined by the first and third partitioning lines that is filled with a protective filler material forming a barrier against moisture, therewith defining photovoltaic cells encapsulated by the protective material of the coating and the protective filler material.

Perovskite light-emitting device

Provided are: a light-emitting layer for a perovskite light-emitting device; a method for manufacturing the same; and a perovskite light-emitting device using the same. The method of the present invention for manufacturing a light-emitting layer for a halide perovskite light-emitting device comprises a step of forming a first nanoparticle thin film by coating, on a member for coating a light-emitting layer, a solution comprising halide perovskite nanoparticles including a perovskite nanocrystal structure. Thereby, a nanoparticle light emitter has therein a halide perovskite having a crystal structure in which FCC and BCC are combined; and can show high color purity. In addition, it is possible to improve the luminescence efficiency and luminance of a device by making perovskite as nanoparticles and then introducing the same into a light-emitting layer.

Double perovskite

The present invention relates to a semiconductor device comprising a semiconducting material, wherein the semiconducting material comprises a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I]; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X]. The invention also relates to a process for producing a semiconductor device comprising said semiconducting material. Also described is a compound comprising: (i) one or more first monocations [A]; (ii) one or more second monocations [B.sup.I] selected from Cu.sup.+, Ag.sup.+ and Au.sup.+; (iii) one or more trications [B.sup.III]; and (iv) one or more halide anions [X].

ENERGY-HARVESTING CHROMOGENIC DEVICES

The present disclosure relates to devices that include a perovskite, where, when a first condition is met, at least a portion of the perovskite is in a first phase that substantially transmits light, when a second condition is met, at least a portion of the perovskite is in a second phase that substantially absorbs light, and the perovskite is reversibly switchable between the first phase and the second phase by reversibly switching between the first condition and the second condition.

Stacked photoelectric conversion device and method for producing same

A method for manufacturing a stacked photoelectric conversion device includes forming an intermediate transparent conductive layer on a light-receiving surface of a crystalline silicon-based photoelectric conversion unit including a crystalline silicon substrate, and forming a thin-film photoelectric conversion unit on the intermediate transparent conductive layer. The stacked photoelectric conversion device includes the crystalline silicon-based photoelectric conversion unit, the intermediate transparent conductive layer, and the thin-film photoelectric conversion unit. The light-receiving surface of the crystalline silicon-based photoelectric conversion unit has a textured surface including a plurality of projections and recesses. The textured surface has an average height of 0.5 m or more. The intermediate transparent conductive layer fills the recesses of the textured surface and covers the tops of the projections of the textured surface. At least a part of the thin-film photoelectric conversion unit is deposited by a wet method.

Photoelectric conversion element, and method and apparatus for manufacturing the same
10950810 · 2021-03-16 · ·

A photoelectric conversion element according to an embodiment includes: a first electrode; a second electrode; and a photoelectric conversion layer that is in contact with the first electrode and the second electrode and includes an active layer containing a perovskite compound. The active layer gives an X-ray diffraction pattern having a first diffraction peak ascribed to the (004) plane of the perovskite compound and a second diffraction peak ascribed to the (220) plane of the perovskite compound. The ratio of the maximum intensity of the first diffraction peak to the maximum intensity of the second diffraction peak is 0.18 or more.

SOLAR CELL MODULE COMPRISING PEROVSKITE SOLAR CELL AND MANUFACTURING METHOD THEREOF
20210082634 · 2021-03-18 ·

A solar cell module includes: a solar cell comprising a perovskite solar cell; a first encapsulating material and a second encapsulating material for sealing the solar cell; a first protective member positioned on the first encapsulating material; a second protective member positioned on the second encapsulating material; and a third encapsulating material positioned on a side surface of the first encapsulating material and the second encapsulating material. The water vapor transmission rate (WVTR) of the third encapsulating material is less than the WVTR of the second encapsulating material, and the WVTR of the second encapsulating material is less than the WVTR of the first encapsulating material. Thus, it is possible to obtain the effects of securing the conversion efficiency of the solar cell module against degradation and securing reliability of the solar cell module.

SOLAR CELL
20210091323 · 2021-03-25 ·

The present disclosure provides a solar cell including a first electrode, a second electrode, a photoelectric conversion layer disposed between the first electrode and the second electrode, and an electron transport layer disposed between the first electrode and the photoelectric conversion layer. At least one of the first electrode and the second electrode has a light-transmitting property. The photoelectric conversion layer contains a perovskite compound composed of a monovalent cation, a Sn cation, and a halogen anion. The electron transport layer contains an electron transport material containing niobium oxide. The niobium oxide is amorphous. The electron transport material has a conduction band at a bottom of which an energy level with respect to a vacuum level is greater than 3.9 eV and less than 3.1 eV.