H10K2102/20

DISPLAY DEVICE
20240237488 · 2024-07-11 ·

In a display device according to an embodiment of the present disclosure, a second electrode layer which has a higher melting point than that of the first electrode layer has high resistance to laser heat, such that damage thereto may be reduced even when a laser cutting process is performed. Thus, penetration of external defect-causing factors into an organic light-emitting layer may be reduced due to the second electrode layer constituting an outermost layer of the cathode electrode layer.

LIGHT EMITTING DEVICE INCLUDING ORGANIC FUNCTIONAL LAYER
20240284765 · 2024-08-22 ·

A light emitting device includes an organic light emitting element arranged above a substrate and including an anode, an organic functional layer including an organic light emitting layer, and a cathode, a capacitive element including an upper electrode arranged between the substrate and the organic light emitting element so as to reflect light entering from the organic functional layer via the anode, a dielectric layer arranged between the substrate and the upper electrode, and a lower electrode arranged between the substrate and the dielectric layer, and an insulating layer arranged between the capacitive element and the organic light emitting element. The upper electrode is electrically insulated from the anode. A distance between the upper electrode and the organic light emitting layer is adjusted so as to improve efficiency of light extraction from the organic light emitting layer.

TRANSPARENT STRUCTURE FOR EMITTING LIGHT
20240324274 · 2024-09-26 ·

A transparent structure for emitting light is described. The transparent structure comprises an emissive layer (EML) positioned between first and second electrodes. The EML is tuned such that luminance through the first electrode is greater than luminance through the second electrode.

Highly efficient inverted polymer solar cells using an indium gallium zinc oxide interfacial layer

Organic polymer semiconductor-based polymer solar cells (PSCs) have attracted considerable research interest due to having excellent electrical, structural, optical, mechanical, and chemical properties. In the past 20 years, considerable efforts have been made to develop PSCs. Generally, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is used as a hole transport layer (HTL) of the PSC to enhance hole extraction efficiency, but highly acidic PEDOT:PSS destroys an indium tin oxide (ITO) electrode and an active layer and thus reduces the lifetime of the device. To avoid this problem, some attempts have been made to develop inverted PSCs having different electron transport layers (ETLs). However, such a device has limited power conversion efficiency (PCE) due to low electron mobility of the ETL. Therefore, attempts have been made to enhance the PCE of inverted PSCs using indium gallium zinc oxide (IGZO) having optimized indium (In), gallium (Ga), and zinc (Zn) contents. Accordingly, inverted PSCs that have ZnO or IGZO (having varying In:Ga:Zn molar ratios) as an ETL and have an ITO/ETL/PTB7:PC.sub.71BM/MoO.sub.3/Al structure have been constructed. The PCE of the inverted PSC can be increased from 6.22% to 8.72% using IGZO having an optimized weight ratio of In, Ga, and Zn.

MULTIPLE DISTRIBUTED BRAGG REFLECTOR PIXEL ARRAY
20240341157 · 2024-10-10 ·

A microcavity pixel array device and fabrication method having a shared multi-DBR system configured to cover a wide spectral bandwidth range. A wide emission waveband is achieved by depositing a first DBR on top of an OLED array and subsequently depositing a second DBR on top of the first DBR, with each DBR having a unique design. The multi-DBR covers a wider spectral bandwidth range than a single DBR, therefore achieving nearly total reflection for a range of OLEDs designed at different color wavelengths.

ANTI-SHOCK LAYER AND DISPLAY PANEL INCLUDING THE SAME

A display panel includes a display area, a circuit element layer including insulating layers and a transistor in the display area, a first insulating layer among the insulating layers defining a first through hole of the circuit element layer which is in the display area, a light emitting element electrically connected to the transistor, and an anti-shock pattern having an elastic modulus greater than about 100 gigapascals, the anti-shock pattern being in the first through hole.

PERYLENE DIIMIDE CATHODE INTERLAYER FOR ORGANIC PHOTOVOLTAICS
20240357841 · 2024-10-24 ·

Multilayer organic electronic devices having an electron transport layer (ETL). The ETL is a film comprising an N-annulated perylene diimide (NPDI) compound having at least one pyrrole NH bond and at least 1 equivalent of Cs.sub.2CO.sub.3 with respect to the NPDI compound and the number of pyrrolic NH bonds in the NPDI compound. The ETL is positioned between the photoactive layer and the top electrode (cathode). Multilayer devices including the ETL are fabricated employing immiscible solvent methods. A method for making the ETL layers is provided which employs an ink formulation in which the NPDI compound is solubilized in a selected polar solvent by addition of at least one equivalent of Cs.sub.2CO.sub.3 respect to the NPDI compound. Exemplary polar solvents include ethanol, 1-propanol, ethyl acetate and mixtures thereof.

Organic Electronic Device Comprising at Least One Metal Complex of Formula (I)
20240397744 · 2024-11-28 ·

The present invention relates to an organic electronic device comprising a substrate, an anode layer, a cathode layer, at least one first emission layer, and a hole injection layer, wherein the hole injection layer comprises a metal complex, wherein the metal complex has the formula (I): Formula (I).

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DISPLAY APPARATUS AND METHOD FOR MANUFACTURING DISPLAY APPARATUS
20240423025 · 2024-12-19 ·

A display apparatus with high display quality is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first coloring layer, a second coloring layer, and a first insulating layer. The first light-emitting device includes a first pixel electrode over the first insulating layer, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer. The second light-emitting device includes a second pixel electrode over the first insulating layer, a second EL layer over the second pixel electrode, and the common electrode over the second EL layer. The first coloring layer is provided to overlap with the first light-emitting device. The second coloring layer is provided to overlap with the second light-emitting device. The first coloring layer and the second coloring layer transmit light of different wavelength ranges. The first insulating layer includes a depressed portion between the first pixel electrode and the second pixel electrode. A third EL layer is provided in the depressed portion of the first insulating layer. The first EL layer, the second EL layer, and the third EL layer contain the same material. The sum of the thickness of the first pixel electrode and the depth of the depressed portion is larger than the thickness of the third EL layer.

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE

A device includes a carbon nanotube having a channel region and dopant-free source/drain regions at opposite sides of the channel region, a first metal oxide layer interfacing a first one of the dopant-free source/drain regions of the carbon nanotube, a second metal oxide layer interfacing a second one of the dopant-free source/drain regions of the carbon nanotube and a gate structure over the channel region of the carbon nanotube, and laterally between the first metal oxide layer and the second metal oxide layer.