The present invention relates to a soft actuator moving linearly against external stimuli whose expansion and contraction can be actively controlled, suggesting that the actuator of the invention overcomes the problems of the conventional soft actuators, The soft actuator of the present invention can be repetitively driven quickly and accurately by controlling heating and cooling by using thermoelectric effect and, the soft actuator of the present invention can realize bending, tensioning, compression, and rotational driving of a tubular device containing a driver.

We disclose herein a CMOS-based flow sensor comprising a substrate comprising an etched portion; a dielectric region located on the substrate, wherein the dielectric region comprises a dielectric membrane over an area of the etched portion of the substrate; a p-n junction type device formed within the dielectric membrane, wherein the p-n junction type device is configured to operate as a temperature sensing device.

A thermoelectric device may include a plurality of electrically conductive first threads and a plurality of electrically insulating second threads structured and arranged to define a fabric. At least one first thread of the plurality of first threads may include a plurality of p-doped thread sections and a plurality of n-doped thread sections arranged in alternating relationship with one another. The plurality of first threads may extend in a wavy course defining a plurality of curvature-turning points. The plurality of p-doped thread sections and the plurality of n-doped thread sections may be arranged in a respective curvature-turning point of the plurality of curvature-turning points.

Disclosed is a thermoelectric cell having thermoelectric tracks of alternating types connected in series by metallic connections, including a platform suspended over a substrate by arms, the platform and the arms being parts of the same thermally and electrically insulating layer, and each arm supporting a thermoelectric track.

A thermoelectric device, module, and system, and method for and method for making is provided. The thermoelectric device (200) having a first and second elements (202 and 204). The first and second elements (202 and 204) having first and second portions (206 and 208), and third and fourth portions (212 and 214) with first and second regions (210 and 216) connected between the first and second portions (206 and 208) and third and fourth portions (112 and 114), respectively. The first and second portions (206 and 208) and third and fourth portions (112 and 114) are electrically coupled though regions (210 and 216) and with thermal conductance between first and second portions (206 and 208) and third and fourth portions (212 and 214) being inhibited by regions (110 and 116), respectively. Thermoelectric element (203) having first and second electrodes (219, 221), wherein electrode (221) of the thermoelectric element (103) is electrically and thermally coupled to portion (208) and wherein the electrode (119) is electrically and thermally coupled to portion (112).

Metal interconnect layers on a top surface connected through holes to interconnect layers of the same or interconnect layers of a thermoelectrically different material on a bottom surface material on the bottom surface. Through hole connection provided by a material of the same or similar thermoelectric material as interconnects. A second metal of a thermoelectrically different material than the first interconnect layer is connected through a second hole from the top side interconnect to the bottom side interconnect. A second through hole connection provided by a metal of the same or similar thermoelectric material as the interconnect layer on the bottom side. Layers are connected in an alternating fashion to form a differential thermocouple. The pattern is created by printing conductive metallic inks on the surfaces and through holes, or by a combination of plating and etching processes and printing conductive metallic inks on the surfaces and through holes.

The embodiments of the present invention relate to a thermoelectric element and a thermoelectric module used for cooling, and the thermoelectric module can be made thin by having a first substrate and a second substrate with different surface areas to raise the heat-dissipation effectiveness.

A thermoelectric module with high efficiency is provided. The thermoelectric module may include a first substrate including a plurality of first electrodes, a second substrate provided opposite the first substrate and including a plurality of second electrodes, a plurality of thermoelectric devices provided between the first substrate and the second substrate and electrically connected to the first electrodes and the second electrodes, and a wire connection hole configured to penetrate through at least one of the first substrate and the second substrate and expose a portion of at least one surface of the first electrodes and the second electrodes.

Systems, methods, and devices of the various embodiments provide for microfabrication of devices, such as semiconductors, thermoelectric devices, etc. Various embodiments may include a method for fabricating a device, such as a semiconductor (e.g., a silicon (Si)-based complementary metal-oxide-semiconductor (CMOS), etc.), thermoelectric device, etc., using a mask. In some embodiments, the mask may be configured to allow molecules in a deposition plume to pass through one or more holes in the mask. In some embodiments, molecules in a deposition plume may pass around the mask. Various embodiments may provide thermoelectric devices having metallic junctions. Various embodiments may provide thermoelectric devices having metallic junctions rather than junctions formed from semiconductors.

A solid state energy conversion device along with its production methods and systems of use is provided. The device in its most basic form consists of two layers, in contact with each other, of dissimilar materials in terms of electron density and configuration, sandwiched between metal layers, which serve as the anode and cathode of the device. One example, of the inside layers, is when a carbon and an ionic material layer (carbon matrix) is contacted with, the other inner material, consisting of an oxide mixed with an ionic material (oxide matrix). This device takes advantage of the built-in potential that forms across the barrier between the carbon matrix and the oxide matrix. The built-in potential of the device (when not attached to a resistive load at the terminals), which is determined mathematically by integrating the electrostatic forces that have created themselves across the barrier, will rise or fall in direct proportion to the rise and fall of the device temperature (in kelvins). When a load is attached across the terminals of the device, current flows. Depending on the size of the load or the surface area of the device, a reduced current will allow sustained recombination such that the built-in potential and current remains steady overtime. Otherwise, the current curve will fall over time similar to a capacitor device. Experimentation shows that current rises by the fourth power of the temperature factor.