A domain wall displacement element includes a magnetoresistance element which has a reference layer and a domain wall displacement layer each containing a ferromagnetic body, a non-magnetic layer, and first and second magnetization fixed layers which are in contact with the displacement layer, wherein the first layer has a first region in contact with the displacement layer, a non-magnetic first intermediate layer, and a second region contacting the first intermediate layer, the first region has a first ferromagnetic layer contacting the first intermediate layer, the second region has a second ferromagnetic layer contacting the first intermediate layer, the first and second ferromagnetic layers are ferromagnetically coupled, a ferromagnetic layer closest to the displacement layer in the first region and a ferromagnetic layer closest to displacement layer in the second magnetization fixed layer have the same film configuration, and the first and second regions are different in film configuration.

Embodiments of present invention provide a method of forming a MRAM structure. The method includes forming a dielectric layer on top of a bottom contact; creating an opening in the dielectric layer, the opening has a slant top edge; filling a bottom portion of the opening to form a bottom electrode; filling a top portion of the opening with a first ferromagnetic material to form a first ferromagnetic layer; forming a stack of blanket layers, including a blanket tunnel barrier layer, a blanket second ferromagnetic layer, and a blanket top electrode layer, on top of the first ferromagnetic layer; patterning the stack of blanket layers into a top portion of a magnetic tunnel junction stack that includes a tunnel barrier layer, a second ferromagnetic layer, and a top electrode; and forming a top contact in contact with the top electrode. A structure formed thereby is also provided.

Embodiments of present invention provide a method of forming a MRAM structure. The method includes forming a dielectric layer on top of a bottom contact; creating an opening in the dielectric layer, the opening has a slant top edge; filling a bottom portion of the opening to form a bottom electrode; filling a top portion of the opening with a first ferromagnetic material to form a first ferromagnetic layer; forming a stack of blanket layers, including a blanket tunnel barrier layer, a blanket second ferromagnetic layer, and a blanket top electrode layer, on top of the first ferromagnetic layer; patterning the stack of blanket layers into a top portion of a magnetic tunnel junction stack that includes a tunnel barrier layer, a second ferromagnetic layer, and a top electrode; and forming a top contact in contact with the top electrode. A structure formed thereby is also provided.

A magnetic memory device and a method for fabricating the same are provided. The magnetic memory device includes a pinned layer pattern, a free layer pattern including boron (B), a tunnel barrier layer pattern between the pinned layer pattern and the free layer pattern, an oxide layer pattern spaced apart from the tunnel barrier layer pattern with the free layer pattern therebetween, the oxide layer pattern including a metal borate, and a capping layer pattern spaced apart from the free layer pattern with the oxide layer pattern therebetween, the capping layer pattern including a metal boride, wherein a difference between a boron concentration of the free layer pattern and a boron concentration of the oxide layer pattern is 10 at % or less, and a difference between the boron concentration of the oxide layer pattern and a boron concentration of the capping layer pattern is 10 at % or less.

A magnetic memory device and a method for fabricating the same are provided. The magnetic memory device includes a pinned layer pattern, a free layer pattern including boron (B), a tunnel barrier layer pattern between the pinned layer pattern and the free layer pattern, an oxide layer pattern spaced apart from the tunnel barrier layer pattern with the free layer pattern therebetween, the oxide layer pattern including a metal borate, and a capping layer pattern spaced apart from the free layer pattern with the oxide layer pattern therebetween, the capping layer pattern including a metal boride, wherein a difference between a boron concentration of the free layer pattern and a boron concentration of the oxide layer pattern is 10 at % or less, and a difference between the boron concentration of the oxide layer pattern and a boron concentration of the capping layer pattern is 10 at % or less.

Provided are a magnetic random access memory cell and a magnetic random access memory. In one form, a memory cell includes: a spin-orbit torque (SOT) layer, through which a write current flows when performing a write operation on the magnetic random access memory cell; a magnetic tunnel junction, located on the SOT layer; a first bottom plug, located on a bottom of the SOT layer and contacting one end of the SOT layer, and a second bottom plug, located on the bottom of the SOT layer and spaced apart from the first bottom plug, the second bottom plug contacting the other end of the SOT layer, and an arrangement direction of the second bottom plug and the first bottom plug forming an acute included angle with a magnetic moment direction of the magnetic tunnel junction.

Provided are a magnetic random access memory cell and a magnetic random access memory. In one form, a memory cell includes: a spin-orbit torque (SOT) layer, through which a write current flows when performing a write operation on the magnetic random access memory cell; a magnetic tunnel junction, located on the SOT layer; a first bottom plug, located on a bottom of the SOT layer and contacting one end of the SOT layer, and a second bottom plug, located on the bottom of the SOT layer and spaced apart from the first bottom plug, the second bottom plug contacting the other end of the SOT layer, and an arrangement direction of the second bottom plug and the first bottom plug forming an acute included angle with a magnetic moment direction of the magnetic tunnel junction.

Provided are a magnetic random access memory cell and a magnetic random access memory. One form of a memory cell includes: a spin-orbit torque (SOT) layer, through which a write current flows when performing a write operation on the magnetic random access memory cell, a direction of the write current being a first direction, and a direction parallel to the SOT layer and perpendicular to the first direction being a second direction; and a magnetic tunnel junction, located on the SOT layer, the magnetic tunnel junction including substructures symmetrical with respect to the second direction, and a magnetic moment direction of the substructure forming an acute included angle with the first direction.

Provided are a magnetic random access memory cell and a magnetic random access memory. One form of a memory cell includes: a spin-orbit torque (SOT) layer, through which a write current flows when performing a write operation on the magnetic random access memory cell, a direction of the write current being a first direction, and a direction parallel to the SOT layer and perpendicular to the first direction being a second direction; and a magnetic tunnel junction, located on the SOT layer, the magnetic tunnel junction including substructures symmetrical with respect to the second direction, and a magnetic moment direction of the substructure forming an acute included angle with the first direction.

According to one embodiment, a magnetic memory device includes a first ferromagnetic layer, a first nonmagnetic layer provided on the first ferromagnetic layer, a second ferromagnetic layer provided on the first nonmagnetic layer, an oxide layer containing magnesium (Mg), a rare-earth element, and a noble-metal element and provided on the second ferromagnetic layer, and a second nonmagnetic layer provided on the oxide layer.