An electrical current transducer including a housing, a magnetic core comprising a central passage and a magnetic circuit gap, a magnetic field detector positioned in the magnetic circuit gap, and a leadframe conductor arrangement comprising a primary conductor for carrying the current to be measured and magnetic field detector conductors for connecting the magnetic field detector to an external circuit.

An apparatus is provided which comprises: a first paramagnet; a stack of layers, a portion of which is adjacent to the first paramagnet, wherein the stack of layers is to provide an inverse Rashba-Edelstein effect; a second paramagnet; a magnetoelectric layer adjacent to the second paramagnet; and a conductor coupled to at least a portion of the stack of layers and the magnetoelectric layer.

A field-sensor device comprises first and second field sensors disposed in corresponding different first and second orientations, each responsive to an external field to produce corresponding first and second sensor signals. One of or both the first and second sensor signals are converted to equivalent comparable sensor signals in a common orientation and compared to determine a faulty field sensor. If a faulty field sensor is determined, a faulty sensor signal is produced or, if a faulty sensor is not determined, an output sensor signal responsive to the first, second or comparable sensor signals is produced. Evaluation of the direction of differences between the comparable sensor signals can determine which of the first and second field sensors is faulty.

A semiconductor stack for a Hall effect device, which comprises: a bottom barrier comprising Al.sub.xGa.sub.1-xAs, a channel comprising In.sub.yGa.sub.1-yAs, on the bottom barrier, a channel barrier with a thickness which is at least 2 nm and which is smaller than or equal to 15 nm, and which at least comprises a first layer comprising Al.sub.zGa.sub.1-zAs with 0.1≤z≤0.22, wherein the first layer has a thickness of at least 2 nm, wherein a conduction band edge of the bottom barrier and the first layer is higher than a conduction band edge of the channel, a doping layer comprising a composition of Al, Ga and As and doped with n-type material, a top barrier comprising a composition of Al, Ga and As.

A semiconductor device includes a semiconductor substrate 10 of a first conductivity type, a vertical Hall element 100 provided on the semiconductor substrate 10, and an excitation conductor 200 provided directly above the vertical Hall element 100 with an intermediation of an insulating film 30. The vertical Hall element 100 includes a semiconductor layer 101 of a second conductivity type provided on the semiconductor substrate 10, and a plurality of electrodes 111 through 115 each constituted from a high-concentration second conductivity type impurity region and provided on the surface of the semiconductor layer 101 along a straight line. A ratio W.sub.C/W.sub.H between a width W.sub.C of the excitation conductor 200 and a width W.sub.H of each of the plurality of electrodes 111 through 115 satisfies 0.3≤W.sub.C/W.sub.H≤1.0.

A semiconductor devices has a vertical Hall element formed on a semiconductor substrate, the vertical Hall element including a semiconductor layer of a second conductivity type formed above the semiconductor substrate; an impurity diffusion layer of the second conductivity type formed in an upper portion of the semiconductor layer and having a concentration higher than that of the semiconductor layer; a plurality of electrodes formed on a surface of the impurity diffusion layer, arrayed in a straight line, and each formed from an impurity region of the second conductivity type; a plurality of electrode isolation diffusion layers of the first conductivity type each formed between two adjacent electrodes; and a buried layer formed between the semiconductor substrate and the semiconductor layer, and having a concentration higher than that of the semiconductor layer and lower than that of the impurity diffusion layer.

The magnetoresistive stack or structure of a magnetoresistive device includes one or more electrodes or electrically conductive lines, a magnetically fixed region, a magnetically free region disposed between the electrodes or electrically conductive lines, and a dielectric layer disposed between the free and fixed regions. The magnetoresistive device may further include a spin-Hall (SH) material proximate to at least a portion of the free region, and one or more insertion layers comprising antiferromagnetic material.

A current sensor integrated circuit (IC) includes a unitary lead frame having at least one first lead having a terminal end, at least one second lead having a terminal end, and a paddle having a first surface and a second opposing surface. A semiconductor die is supported by the first surface of the paddle, wherein the at least one first lead is electrically coupled to the semiconductor die and the at least one second lead is electrically isolated from the semiconductor die. The current sensor IC further includes a first mold material configured to enclose the semiconductor die and the paddle and a second mold material configured to enclose at least a portion of the first mold material, wherein the terminal end of the at least one first lead and the terminal end of the at least one second lead are external to the second mold material.

A magnetic memory device includes a spin-orbit torque (SOT) induction spin Hall electrode and a free layer of a magnetic tunnel junction (MTJ) stack disposed on the spin Hall electrode which is a synthetic anti-ferromagnetic structure. The free layer has a magnetic moment which is askew of the long axis of the MTJ stack and askew the direction of current flow through the spin Hall electrode. The MTJ stack internally generates a magnetic field to switch the state of the free layer. The free layer includes a first layer separated from a second layer by a spacer layer, where the first layer and the second layer may have the same or different crystalline structures.

A Hall element that exhibits an anomalous Hall effect includes a substrate and a thin film as a magneto-sensitive layer on the substrate, the thin film having a composition of Fe.sub.xSn.sub.1-x, where 0.5≤x<0.9. The thin film may be made of an alloy of Fe and Sn, and a dopant element. The dopant element may be a transition metal element that modulates spin-orbit coupling or magnetism. The dopant element may be a main-group element that has a different number of valence electrons from Sn and modulates carrier density. The dopant element may be a main-group element that modulates density of states.