Spin-Hall (SH) material is provided near free regions of magnetoresistive devices that include magnetic tunnel junctions. Current flowing through such SH material injects spin current into the free regions such that spin torque is applied to the free regions. The spin torque generated from SH material can be used to switch the free region or to act as an assist to spin-transfer torque generated by current flowing vertically through the magnetic tunnel junction, in order to improve the reliability, endurance, or both of the magnetoresistive device. Further, one or more additional regions or manufacturing steps may improve the switching efficiency and the thermal stability of magnetoresistive devices.

The semiconductor device includes a first vertical Hall element provided in a first region of a semiconductor substrate, and including a first plurality of electrodes arranged at predetermined intervals on a first straight line, a second vertical Hall element provided in a second region of the semiconductor substrate different from the first region, and including a second plurality of electrodes of the same number as that of the first plurality of electrodes, the second plurality of electrodes being arranged at the predetermined intervals on a second straight line parallel to the first straight line, a first drive power source configured to drive the first vertical Hall element, and a second drive power source configured to drive the second vertical Hall element and provided separately from the first drive power source.

A spin-orbit torque wiring extending in a first direction and a first ferromagnetic layer laminated on one surface of the spin-orbit torque wiring. In addition, the spin-orbit torque wiring includes a first wiring and a second wiring from the first ferromagnetic layer side. The first wiring and the second wiring are both made of a metal and a temperature dependency of the resistivity of the first wiring in a temperature range of at least −40° C. to 100° C. is higher than that of the second wiring.

A Hall-effect sensor package includes and an IC die including a Hall-Effect element and a leadframe including leads on a first side providing a first field generating current (FGC) path including ≥1 first FGC input pin coupled by a reduced width first curved head over or under the Hall-effect sensor element to ≥1 first FGC output pin, and second leads on a second side of the package. Some leads on the second side are attached to bond pads on the IC die including the output of the Hall-effect element. A clip is attached at one end to the first FGC input pin and at another end to a location on the first FGC output pin, having a reduced width second curved head in between that is over or under the Hall-effect sensor element opposite the first head.

A base element for switching a magnetization state of a nanomagnet includes a heavy-metal nanostrip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet includes a shape having a long axis and a short axis. The ferromagnetic nanomagnet has both a perpendicular-to-the-plane anisotropy H.sub.kz and an in-plane anisotropy H.sub.kx and the ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable by a flow of electrical charge through the heavy-metal nanostrip. A direction of flow of the electrical charge through the heavy-metal nanostrip includes an angle ξ with respect to the short axis of the nanomagnet.

Electrical current transducer including an insulating body, a magnetic core comprising a central passage and a magnetic circuit gap, a magnetic field detector positioned in the magnetic circuit gap, and a sheet metal leadframe conductor arrangement comprising a primary conductor for carrying the current to be measured and secondary conductors for connecting the magnetic field detector to an external circuit, the primary conductor comprising a central portion extending through the central passage of the magnetic core, lateral extension arms extending from opposite ends of the central portion, and connection ends for connection to an external conductor, the secondary conductors comprising a plurality of conductors, each conductor comprising a sensing cell connection pad substantially aligned with the central portion of the primary conductor and a connection end for connection to the external circuit, the insulating body comprising an inner overmold portion surrounding a central portion of the primary conductor and forming a core guide positioning and insulating the magnetic core with respect to the leadframe conductor arrangement. The insulating body further comprises an outer overmold portion molded over the inner overmold portion, the magnetic core, magnetic field sensor, and a central portion of the leadframe conductor arrangement.

Various embodiments of the present disclosure provide a power device including at least one first conductive element adapted to generate a magnetic field when traversed by a current, and characterised in that it further comprises a Hall sensor electrically insulated from the first conductive element. The sensor and the first conductive element are mutually arranged so as to detect said magnetic field indicative of the current that traverses the first conductive element.

The invention relates to a technique for inducing local electric field controlled magnetization, despite the absence of magnetic components. There is provided a novel heterostructure (100), a semiconductor device thereof, or an array of semiconductor devices. The heterostructure comprises a semiconductor substrate (102) carrying a plurality of layers forming at least one heterojunction (104) and hosting a two-dimensional electron gas layer (104B) when one of the layer of the plurality of layers is bounded to an interacting layer (106) being a chiral or a biological macromolecule assembly.

A sensor device comprising: a lead frame; a first/second semiconductor die having a first/second sensor structure at a first/second sensor location, and a plurality of first/second bond pads electrically connected to the lead frame; the semiconductor dies having a square or rectangular shape with a geometric center; the sensor locations are offset from the geometrical centers; the second die is stacked on top of the first die, and is rotated by a non-zero angle and optionally also offset or shifted with respect to the first die, such that a perpendicular projection of the first and second sensor location coincide.

A sensor device comprising: a lead frame; a first/second semiconductor die having a first/second sensor structure at a first/second sensor location, and a plurality of first/second bond pads electrically connected to the lead frame; the semiconductor dies having a square or rectangular shape with a geometric center; the sensor locations are offset from the geometrical centers; the second die is stacked on top of the first die, and is rotated by a non-zero angle and optionally also offset or shifted with respect to the first die, such that a perpendicular projection of the first and second sensor location coincide.