Provided is a Hall element which is reduced in asymmetrically generated offset voltage. A semiconductor device includes: a semiconductor layer of a first conductivity type having a Hall element forming region; an element isolation region of the first conductivity type having a concentration higher than a concentration of the semiconductor layer, the element isolation region being formed so as to surround the Hall element forming region; and a Hall element formed in the Hall element forming region and comprising a magnetism sensing portion of a second conductivity type which is higher in concentration than the semiconductor layer and which is kept apart from the element isolation region through the semiconductor layer.

This application concerns quantum computing, and in particular to structures and mechanisms for providing topologically protected quantum computation. In certain embodiments, a magnetic tunnel barrier is controlled that separates Majorona zero modes (“MZMs”) from an edge area (e.g., a gapless edge) of a quantum spin hall system. In particular implementations, the magnetic tunnel barrier is formed from a pair of magnetic insulators whose magnetization is held constant, and the magnetic tunnel barrier is tuned by controlling a gate controlling the electron density around the magnetic insulator in the QSH plane, thereby forming a quantum dot. And, in some implementations, a state of the quantum dot is read out (e.g., using a charge sensor as disclosed herein).

A spin-orbit-torque magnetoresistance effect element of the present invention includes: a functional unit, a first ferromagnetic layer whose magnetization direction is configured to be fixed, a second ferromagnetic layer whose magnetization direction is configured to change, and a non-magnetic layer located between the first ferromagnetic layer and the second ferromagnetic layer being laminated therein; a spin-orbit torque wiring which extends in a first direction which intersects a lamination direction of the functional unit and is joined to the second ferromagnetic layer; a heat sink layer which extends in the first direction, is disposed so that the heat sink layer and the spin-orbit torque wiring at least partially overlap when viewed in a plan view from the lamination direction, and is provided spaced from the spin-orbit torque wiring in the lamination direction by a distance of twice a thickness of the functional unit or less in the lamination direction thereof.

A Hall effect device includes a semiconductor region and at least three contacts to the semiconductor region, which are arranged in the semiconductor region substantially along a line or curve. The line or curve functionally separates the semiconductor region in a first region and a second region. The Hall effect device further including a first electrode that is electrically isolated against the first region and a second electrode that is electrically isolated against the second region. Two of the at least three contacts supply electric energy to the first region and to the second region, and the remaining at least one contact taps an output signal of the first region and/or the second region that responds to a magnetic field component.

Embodiments of the disclosure provide methods for forming MTJ structures from a film stack disposed on a substrate for MRAM applications and associated MTJ devices. The methods described herein include forming the film properties of material layers from the film stack to create a film stack with a sufficiently high perpendicular magnetic anisotropy (PMA). An iron containing oxide capping layer is utilized to generate the desirable PMA. By utilizing an iron containing oxide capping layer, thickness of the capping layer can be more finely controlled and reliance on boron at the interface of the magnetic storage layer and the capping layer is reduced.

A semiconductor device includes a first and a second vertical Hall elements formed parallel to each other. Each of the first and the second vertical Hall elements includes: a semiconductor layer on the semiconductor substrate; a Hall voltage output electrode and a first and a second drive current supply electrodes each formed of an impurity region, and sequentially arranged along a straight line on the semiconductor layer; and a first electrode isolation diffusion layer between the first drive current supply electrode and the Hall voltage output electrode, and a second electrode isolation diffusion layer between the Hall voltage output electrode and the second drive current supply electrode. The first and the second drive current supply electrodes each has the second depth deeper than the first depth of the Hall voltage output electrode and the depth of each of the electrode isolation diffusion layers.

A component semiconductor structure having a semiconductor layer, which has a front side and a back side, at least one integrated circuit being formed on the front side and a first oxide layer being formed on the back side, a monolithically formed semiconductor body having a top surface and a back surface being provided, and a second oxide layer being formed on the back surface, and the two oxide layers being integrally connected to each other, and a sensor region formed between the top surface and the back surface and having a three-dimensional isotropic Hall sensor structure being disposed in the semiconductor body, the Hall sensor structure extending from a buried lower surface up to the top surface, and at least three first highly doped semiconductor contact regions being formed on the top surface and at least three second highly doped semiconductor contact regions being formed on the lower surface.

The present disclosure describes a semiconductor circuit arrangement comprising a Hall sensor circuit integrated into a semiconductor substrate and configured to conduct a Hall supply current between a first terminal and a second terminal of a Hall effect region at an angle of 45° with respect to a normal to a primary flat plane of the semiconductor substrate laterally through the Hall effect region, wherein the Hall supply current has a first dependence on a mechanical stress of the semiconductor substrate. A resistance arrangement integrated into the semiconductor substrate, the resistance arrangement being different than the Hall effect region, is configured to conduct a current between a first terminal and a second terminal of the resistance arrangement, wherein the current through the resistance arrangement has a second dependence on the mechanical stress of the semiconductor substrate. A compensation circuit is configured to correct, on the basis of a signal difference between the first terminal of the Hall effect region and the first terminal of the resistance arrangement, a Hall voltage that is measured between a third and a fourth terminal of the Hall effect region and is dependent on the mechanical stress of the semiconductor substrate.

Structures for a Hall sensor and methods of forming a structure for a Hall sensor. The structure includes a semiconductor body having a top surface and a sloped sidewall defining a Hall surface that intersects the top surface. The structure further includes a well in the semiconductor body and multiple contacts in the semiconductor body. The well has a section positioned in part beneath the top surface and in part beneath the Hall surface. Each contact is coupled to the section of the well beneath the top surface of the semiconductor body.

Valleytronic devices comprise a channel layer having ferrovalley propertiesband-spin splitting and Berry curvature dependence on the polarization of the channel layer. Certain monochalcogenides possess these ferrovalley properties. Valleytronic devices utilize ferrovalley properties to store and/or carry information. Valleytronic devices can comprise a cross geometry comprising a longitudinal portion and a transverse portion. A spin-polarized charge current injected into the longitudinal portion of the device is converted into a voltage output across the transverse portion via the inverse spin-valley Hall effect whereby charge carriers acquire an anomalous velocity in proportion to the Berry curvature and an applied in-plane electric field resulting from an applied input voltage. Due to the Berry curvature dependency on the material polarization, switching the polarity of the input voltage that switches the channel layer polarization also switches the polarity of the differential output voltage.