A magnetic memory includes a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT hybrid magnetic devices includes a first magnetic layer, as a magnetic free layer, a spacer layer disposed under the first magnetic layer, and a second magnetic layer, as a magnetic reference layer, disposed under the spacer layer. The SOT conductive layer is disposed over the first magnetic layer of each of the first and second SOT-STT hybrid magnetic devices.

An integrated Hall effect sensor is disclosed. The integrated Hall effect sensor has high tunable sensitivity by varying the thickness of the Hall plate. The Hall effect sensor is integrated onto a crystalline-on-insulator substrate, such as silicon-on-insulator (SOI) substrate. The Hall plate is part of the surface substrate of the SOI substrate. A sensor well is disposed in the bulk substrate of the SOI substrate. By applying an appropriate well bias voltage, the thickness of the Hall plate can be tuned from below the surface substrate to achieve the desired sensitivity. A gate may also be provided on the surface substrate. Biasing the gate with an appropriate gate bias voltage can further enhance thickness tunability of the Hall plate from above to achieve the desired sensitivity.

A magnetoresistive element comprises a nonmagnetic sidewall-current-channel (SCC) structure provided on a surface of the SOT material layer that exhibits the Spin Hall Effect, which is opposite to a surface of the SOT material layer where the magnetic recording layer is provided, and comprising an insulating medium in a central region of the SCC structure, and a conductive medium being a sidewall of the SCC structure and surrounding the insulating medium, making an electric current crowding inside the SOT material layer and the magnetic recording layer to achieve a spin-orbit torque and a higher spin-polarization degree for an applied electric current.

An apparatus includes a substrate having a planar top surface, a sequence of crystalline semiconductor layers located on the planar surface, and first and second sets of electrodes located over the sequence. The sequence of crystalline semiconductor layers has a 2D quantum well therein. The first set of electrodes border opposite sides of a lateral region of the sequence and are controllable to vary a width of a non-depleted portion of the quantum well along the top surface. The second set of electrodes border first and second channels between the lateral region and first and second adjacent lateral areas of the sequence and are controllable to vary widths of non-depleted segments of the quantum well in the channels. The electrodes are located such that straight lines connecting the first and second lateral areas via the channels either pass between one of the electrodes and the substrate or are misaligned to an effective [1 1 0] lattice direction of the sequence.

A magnetic sensor has a pair of Hall elements formed in spaced-apart relationship on a front surface of a semiconductor substrate. A die pad is bonded to a back surface of the semiconductor substrate and overlaps the Hall elements. The die pad has formed therein a magnetic converging plate holder having a recessed portion, and a magnetic converging plate having the same shape and size as the recessed portion is fitted in the recessed portion of the magnetic converging plate holder.

Methods for doping an active Hall effect region of a Hall effect device in a semiconductor substrate, and Hall effect devices having a doped active Hall effect region are provided. A method includes forming a first doping profile of a first doping type in a first depth region of the active Hall effect region by means of a first implantation with a first implantation energy level, forming a second doping profile of the first doping type in a second depth region of the active Hall effect region by means of a second implantation with a second implantation energy level, and forming an overall doping profile of the active Hall effect region by annealing the semiconductor substrate with the active Hall effect region having the first and the second doping profile.

A magnetic recording array includes a plurality of spin elements, and a shared transistor connected to a first spin element and a second spin element adjacent to each other, in which each of the plurality of spin elements includes a wiring and a laminate including a first ferromagnetic layer laminated on the wiring, the shared transistor includes a first gate, a second gate, a first region, a second region, and a third region, in a plan view in a laminating direction of the laminate, the first region is sandwiched between the first gate and the second gate, the second region together with the first region sandwiches the first gate, and the third region together with the first region sandwiches the second gate, and one of the second region and the third region is connected to the first spin element, and the other is connected to the second spin element.

In one aspect, a vertical Hall effect sensor includes a semiconductor wafer having a first conductivity type and a plurality of semiconductive electrodes disposed on the semiconductor wafer. The plurality of semiconductive electrodes have the first conductivity type and include a source electrode, a first sensing electrode and a second sensing electrode, arranged such that the source electrode is between the first sensing electrode and the sensing electrode and a first drain electrode and a second drain electrode, arranged such that the first sensing electrode, second sensing electrode, and source electrode are between the first drain electrode and the second drain electrode. The vertical Hall effect sensor also includes a plurality of semiconductor fingers disposed on the semiconductor wafer and interdigitated with the plurality of semiconductive electrodes, the semiconductor fingers having a second conductivity type.

Disclosed is a magnetic device including a spin sinker. The magnetic device includes a storage medium, a spin sinker, and a read node. The storage medium receives an in-plane current from outside and generates a self-generated spin current that perpendicularly flows to a charge current, thereby controlling a data structure with the self-generated spin current. The spin sinker receives and attenuates the spin current. The read node measures a magnetoresistance of a data structure through the storage medium. The storage medium is made of a magnetic metal and the spin sinker is made of a magnetic insulating material.

A coupler is disclosed that employs hall-effect sensing technology. Specifically, the coupler is configured to produce an output voltage by converting the magnetic field generated by a current conductor at an input side. The output and input sides may be electrically isolated from one another but may be coupled via the hall-effect sensing technology, such as a hall-effect sensor. The output and input sides may be provided in an overlapping configuration.