Patent classifications
H10N99/05
FULLY METALLIC ATOMIC-SCALE TIN TRANSISTORS WITH ULTRALOW POWER DISSIPATION
An atomic-scale tin transistor device with ultralow power dissipation and a method for producing the same and its use. An atomic-scale tin transistor device includes a source electrode, a drain electrode, and a gate electrode. The source, drain, and gate electrodes are spaced apart from one another and immersed in an aqueous electrolyte containing tin ions in an electrochemical cell. The source electrode and drain electrode are connected to each other in an on-state by a bistable atomic-scale tin point-contact which can be reversibly opened and closed by dissolution/deposition potentials applied to the gate electrode, respectively.
Device for detecting surface plasmon and polarization by using topological insulator, method of manufacturing the device, and method of detecting surface plasmon and polarization
A device for detecting a surface plasmon and polarization includes: a topological insulating layer formed on a substrate; first and second electrodes formed on the topological insulating layer; and a waveguide connected to the topological insulating layer between the first and second electrodes.
Casimir power cell
A battery includes a Casimir-effect powered cell (Casimir cell). The Casimir cell includes a first conductive wall; a second conductive wall that faces the first conductive wall; and a conductive antenna disposed in a cavity gap that is a space between the first conductive wall and the second conductive wall. The conductive antenna faces the first conductive wall and the second conductive wall. The first conductive wall and the second conductive wall produce a same first voltage potential. The conductive antenna produces a second voltage potential that is different from the first voltage potential. A voltage that is the difference between the first voltage potential and the second voltage potential is generated by Casimir phenomenon based on arrangement of the conductive antenna between the first conductive wall and the second conductive wall.
Adaptive basis selection for encoded fusion measurements
A quantum computing system and methods for performing fusion based quantum computing on encoded qubits. A fusion controller sequentially performs a series of fusion measurements on respective photonic quantum modes of first and second encoded qubits to obtain a respective series of classical measurement results. For respective fusion measurements of the series of fusion measurements, a basis for performing the respective fusion measurement is selected based on classical measurement results of previous fusion measurements. An encoded fusion measurement result is determined based on the classical measurement results, and the encoded fusion measurement result is stored in a memory medium.
System and method of quantum stochastic rounding using silicon based quantum dot arrays
A novel and useful system and method of quantum stochastic rounding using silicon based quantum dot arrays. Unitary noise is derived from a probability of detecting a particle within a quantum dot comprising position based charge qubits with two time independent basis states |0> and |1>. A two level electron tunneling device generates quantum noise and includes a reservoir of particles, a quantum dot, and a barrier used to control tunneling between the reservoir and the quantum dot. A detector outputs a digital stream corresponding to the probability of a particle being detected. Controlling the bias applied to the barrier controls the probability of detection. The probability density function (PDF) of the output unitary noise is controlled to correspond to a desired probability. Unitary noise is used to perform stochastic rounding by controlling the bias applied to the barrier according to a remainder of numbers to be rounded.
CONTROLLING TLS VIA ON-CHIP FILTERING TO PREVENT QUBIT ENERGY LOSS
Systems and techniques that facilitate controlling TLS via on-chip filtering to prevent qubit energy loss are provided. In various embodiments, a system can comprise a quantum device including a qubit device on a substate. In various embodiments, the quantum device can include an electrode placed in proximity to the qubit device. In various embodiments, an electrical filter can be connected to the electrode. In various embodiments, the quantum device can comprise a voltage source that can be connected to the electrode via the electrical filter. In various embodiments, the voltage source can control a voltage to the electrode to shift a resonant frequency of one or more defects to reduce two level system (TLS) impact on the qubit device.
POLARIZATION-INTENSITY COUPLED LIGHT EMITTING DEVICE
Disclosed is a polarization-intensity coupled light emitting device. In the light emitting device, a semiconductor structure is configured to generate light in response to carrier injection; a spin injector is configured to inject carriers into the semiconductor structure, wherein the light generated by the semiconductor structure has a circular polarization state determined by the magnetization state of the spin injector; a magnetization controller is configured to change the magnetization state of the spin injector; and a chiral metasurface is configured to make differential response to left-handed circularly polarized light component and right-handed circularly polarized light component of the light generated by the semiconductor structure. When the magnetization direction of spin injector is switched, both intensity and circular polarization of the light from the light emitting device can be modulated simultaneously.
SPIN LIGHT EMITTING DEVICE BASED ON TWO-DIMENSIONAL MATERIALS
Disclosed is a spin light emitting device based on two-dimensional material. The light emitting device comprises: a two-dimensional structure configured to emit circularly polarized light in response to spin-polarized carrier injection, wherein the two-dimensional structure is a two-dimensional Van der Waals heterostructure; a spin injector configured to inject spin-polarized carriers into the two-dimensional Van der Waals heterostructure, wherein the light emitted by the two-dimensional structure has a circular polarization state determined by the magnetization state of the spin injector; and a magnetization controller configured to change the magnetization state of the spin injector. The spin-based light emitting device emits circularly polarized light or single photons on the basis of two-dimensional material at room temperature without introducing a magnetic field, and has the capability of electrical control.
ADAPTIVE BASIS SELECTION FOR ENCODED FUSION MEASUREMENTS
A quantum computing system and methods for performing fusion based quantum computing on encoded qubits. A fusion controller sequentially performs a series of fusion measurements on respective photonic quantum modes of first and second encoded qubits to obtain a respective series of classical measurement results. For respective fusion measurements of the series of fusion measurements, a basis for performing the respective fusion measurement is selected based on classical measurement results of previous fusion measurements. An encoded fusion measurement result is determined based on the classical measurement results, and the encoded fusion measurement result is stored in a memory medium.
Antenna-Coupled Graphene Josephson-Junction THZ/MM-Wave Apparatus
Described herein relates to an antenna-coupled graphene Josephson-junction THz/mm-wave apparatus (hereinafter video) detector apparatus and methods thereof. Highly sensitive, broadly tunable detectors may be needed for future sensing applications and quantum information systems. In an embodiment, the video detector apparatus may comprise stacked graphene sheets having a magic twist angle between their in-plane symmetry axes. As such, the material may display superconductivity with at least 2 K transition temperature. Additionally, the video detector apparatus may depend on the decrease in the maximum zero-voltage DC current when AC current is driven through the junction.