Topological insulators, such as single-crystal Bi.sub.2Se.sub.3 nanowires, can be used as the conduction channel in high-performance transistors, a basic circuit building block. Such transistors exhibit current-voltage characteristics superior to semiconductor nanowire transistors, including sharp turn-on, nearly zero cutoff current, very large On/Off current ratio, and well-saturated output current. The metallic electron transport at the surface with good effective mobility can be effectively separated from the conduction of the bulk topological insulator and adjusted by field effect at a small gate voltage. Topological insulators, such as Bi.sub.2Se.sub.3, also have a magneto-electric effect that causes transistor threshold voltage shifts with external magnetic field. These properties are desirable for numerous microelectronic and nanoelectronic circuitry applications, among other applications.

A system and method of operation embeds a three-dimensional structure in a topology of an analog processor, for example a quantum processor. The analog processor may include a plurality of qubits arranged in tiles or cells. A number of qubits and communicatively coupled as logical qubits, each logical qubit which span across a plurality of tiles or cells of the qubits. Communicatively coupling between qubits of any given logical qubit can be implemented via application or assignment of a first ferromagnetic coupling strength to each of a number of couplers that communicatively couple the respective qubits in the logical qubit. Other ferromagnetic coupling strengths can be applied or assigned to couplers that communicatively couple qubits that are not part of the logical qubit. The first ferromagnetic coupling strength may be substantially higher than the other ferromagnetic coupling strengths.

Disclosed are systems and methods for a quantum-analogue computing bit array consisting of a single qubit analogue, a serial two qubit analogue coupling, or parallel N qubit analogues. The quantum-analogue computing bit array comprises an elastic media having photo-elastic and photo-expansion effects, the adjustment of which allows a manipulation of one or more structural degrees of freedom within the elastic media and one or more temporal degrees of freedom within the elastic media. At least one analogue qubit is defined by one or more elastic waves within the elastic media. The quantum-analogue computing bit array further comprises a modulated light source oriented to illuminate the elastic media with a laser radiation to achieve a non-separable multi-phonon superposition of states within the elastic media.

This application concerns quantum computing, and in particular to structures and mechanisms for providing topologically protected quantum computation. In certain embodiments, a magnetic tunnel barrier is controlled that separates Majorona zero modes (“MZMs”) from an edge area (e.g., a gapless edge) of a quantum spin hall system. In particular implementations, the magnetic tunnel barrier is formed from a pair of magnetic insulators whose magnetization is held constant, and the magnetic tunnel barrier is tuned by controlling a gate controlling the electron density around the magnetic insulator in the QSH plane, thereby forming a quantum dot. And, in some implementations, a state of the quantum dot is read out (e.g., using a charge sensor as disclosed herein).

Techniques facilitating frequency allocation in multi-qubit circuits are provided. In one example, a computer-implemented method comprises determining, by a device operatively coupled to a processor, an estimated fabrication yield associated with respective qubit chip configurations by conducting simulations of the respective qubit chip configurations at respective frequency offsets; and selecting, by the device, a qubit chip configuration from among the respective qubit chip configurations based on the estimated fabrication yield associated with the respective qubit chip configurations.

An ion trap chip, which may be used for quantum information processing and the like, includes an integrated microwave antenna. The antenna is formed as a radiator connected by one of its ends to the center trace of a microwave transmission line and connected by its other end to a current return path through a ground trace of the microwave transmission line. The radiator includes several parallel, coplanar radiator traces connected in series. The radiator traces are connected such that they all carry electric current in the same direction, so that collectively, they simulate a single, unidirectionally flowing sheet of current. In embodiments, induced currents in underlying metallization planes are suppressed by parallel slots that extend in a direction perpendicular to the radiator traces.

Disclosed herein is a structure comprising: a gate electrode, a dielectric layer, and a planar layer of a topological material being separated from the gate electrode by at least the dielectric layer, and having a contact interface with the dielectric layer to generate an electric field-controlled Rashba spin-orbit interaction on application of an electric field thereto, wherein the topological material exhibits a topological phase transition between a trivial state and a non-trivial state at a critical electric field strength on application of the electric field, wherein the gate electrode is configured to apply the electric field across the planar layer in a direction perpendicular to a plane of the planar layer; and wherein the topological material exhibits a change in bandgap, in the presence of the electric field, having a spin-dependent contribution represented by a proportionality constant R and a non-spin-dependent contribution represented by a proportionality constant v; and wherein R>.sub.v/3.

A multiple-atom silicon quantum dot is provided that includes multiple dangling bonds on an otherwise H-terminated silicon surface, each dangling bonds having one of three ionization states of +1, 0 or 1 and corresponding respectively to 0, 1, or 2 electrons in a dangling bond state. The dangling bonds together in close proximity and having the dangling bond states energetically in the silicon band gap with selective control of the ionization state of one of the dangling bonds. A new class of electronics elements is provided through the inclusion of at least one input and at least one output to the multiple dangling bonds. Selective modification or creation of a dangling bond is also detailed.

A single electron transistor conjugated to a bacteriophage form a detectable probe where an RF signal identify the location of such probe at the site of specific biological matrix and provide a unique electronic signal such as a Coulomb Staircase and where such signal act as a diagnostic beacon and where such probe and a detector form a mesoscopic detector. The detector uses: a bioprobe containing the phage with its conjugated SET and the properties of the phage specificity; phage mobility within the biological environment and the phage ability to act as a carrier for the SET; and the SET's ultimate use as a beacon for the detection.

The present disclosure is directed a quantum processing element comprising: a semiconductor and a dielectric material forming an interface with the semiconductor; a dopant atom with nuclear spin of quantum number larger than embedded in the semiconductor at a distance from the interface, at least one conductive electrode disposed in a manner such that there is at least a portion of dielectric material between the at least one conductive electrode and the dopant atom. The disclosure is also directed to a method of operating the quantum processing element comprising the steps of: applying a magnetic field to the dopant atom to separate the energies of the spin states associated with the nucleus of the dopant atom; applying a voltage to the at least one conductive electrode to generate an electric field gradient at a nucleus of the dopant atom; and encoding quantum information in the nuclear spin of the nucleus via the applied voltage.