According to embodiments of the present invention, an ink composition is provided. The ink composition includes a plurality of nanostructures distributed in at least two cross-sectional dimension ranges, wherein each nanostructure of the plurality of nanostructures is free of a cross-sectional dimension of more than 200 nm. According to further embodiments of the present invention, a method for forming a conductive member and a conductive device are also provided.

A copper alloy plastically-worked material comprises Mg in the amount of greater than 10 mass ppm and 100 mass ppm or less and a balance of Cu and inevitable impurities, that comprise 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, and 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio of [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 or greater and 50 or less, the electrical conductivity is 97% IACS or greater. The tensile strength is 200 MPa or greater. The heat-resistant temperature is 150° C. or higher.

This copper alloy of one aspect contains greater than 10 mass ppm and less than 100 mass ppm of Mg, with a balance being Cu and inevitable impurities, in which among the inevitable impurities, a S amount is 10 mass ppm or less, a P amount is 10 mass ppm or less, a Se amount is 5 mass ppm or less, a Te amount is 5 mass ppm or less, an Sb amount is 5 mass ppm or less, a Bi amount is 5 mass ppm or less, an As amount is 5 mass ppm or less, a total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less, a mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50, an electrical conductivity is 97% IACS or greater, and a residual stress ratio at 150° C. for 1000 hours is 20% or greater.

This copper alloy contains 10-100 mass ppm of Mg, with a balance being Cu and inevitable impurities, which comprise; 10 mass ppm or less of S, 10 mass ppm or less of P, 5 mass ppm or less of Se, 5 mass ppm or less of Te, 5 mass ppm or less of Sb, 5 mass ppm or less of Bi, 5 mass ppm or less of As. The total amount of S, P, Se, Te, Sb, Bi, and As is 30 mass ppm or less. The mass ratio [Mg]/[S+P+Se+Te+Sb+Bi+As] is 0.6 to 50. The electrical conductivity is 97% IACS or greater. The half-softening temperature is 200° C. or higher. The residual stress ratio RS.sub.G at 180° C. for 30 hours is 20% or greater. The ratio RS.sub.G/RS.sub.B at 180° C. for 30 hours is greater than 1.0.

A metal powder is an ensemble of fine metal particles. The fine metal particles include fine layered metal particles (2). Each of the fine layered metal particles (2) includes a center layer (4), an upper middle layer (6), an upper end layer (8), a lower middle layer (10), and a lower end layer (12). Each of the layers is a flake. The flakes belong to the same crystal. There is a space S1 between the center layer (4) and the upper middle layer (6). There is a space S2 between the upper middle layer (6) and the upper end layer (8). There is a space S3 between the center layer (4) and the lower middle layer (10). There is a space S4 between the lower middle layer (10) and the lower end layer (12).

A polymeric positive temperature coefficient (PPTC) device including a PPTC body, a first electrode disposed on a first side of the PPTC body, and a second electrode disposed on a second side of the PPTC body, wherein the PPTC body is formed of a PPTC material that includes a polymer matrix and a conductive filler, wherein the conductive filler defines 20%-39% by volume of the PPTC material.

A high-frequency coaxial cable used for high-frequency signal transmission includes an inner conductor an insulator surrounding an outer periphery of the inner conductor; a shield conductor surrounding an outer periphery of the insulator and a covering surrounding an outer periphery of the shield conductor, wherein the inner conductor is a compressed conductor having a plurality of silver-plated soft copper element wires compressed.

A method for synthesizing a copper-silver alloy includes an ink preparation step, a coating step, a crystal nucleus formation step and a crystal nucleus synthesis step. In the ink preparation step, a copper salt particle, an amine-based solvent, and a silver salt particle are mixed, thereby preparing a copper-silver ink. In the coating step, a member to be coated is coated with the copper-silver ink. In the crystal nucleus formation step, at least one of a crystal nucleus of copper having a crystal grain diameter of 0.2 μm or less and a crystal nucleus of silver having a crystal grain diameter of 0.2 μm or less is formed from the copper-silver ink. In the crystal nucleus synthesis step, the crystal nucleus of copper and the crystal nucleus of silver are synthesized.

This copper alloy for electronic or electric devices includes: Mg: 0.15 mass % or greater and less than 0.35 mass %; and P: 0.0005 mass % or greater and less than 0.01 mass %, with a remainder being Cu and unavoidable impurities, wherein an amount of Mg [Mg] and an amount of P [P] in terms of mass ratio satisfy [Mg]+20×[P]<0.5, and 0.20<(NF.sub.J2/(1−NF.sub.J3)).sup.0.5≤0.45 is satisfied in a case where a proportion of J3, in which all three grain boundaries constituting a grain boundary triple junction are special grain boundaries, to total grain boundary triple junctions is represented by NF.sub.J3, and a proportion of J2, in which two grain boundaries constituting a grain boundary triple junction are special grain boundaries and one grain boundary is a random grain boundary, to the total grain boundary triple junctions is represented by NF.sub.J2.

In a connection structure of the present disclosure, compression of a first connecting part of a first conductor forming a connecting component causes the first connecting part to be directly coupled to a second connecting part of a second conductor forming a body to be connected, to form an electrical connection structure, wherein the first conductor is made of copper or a copper alloy; and the second conductor has a Vickers hardness HV1 of 110 or more as measured at a position of the second connecting part in a state where the electrical connection structure is formed, and a Vickers hardness HV2 of 80% or more of the Vickers hardness HV1, the Vickers hardness HV2 being measured at a position of the second conductor which does not form the electrical connection structure.