A composition and method for reducing the coefficient of friction and required pulling force of a wire or cable are provided. A composition of aqueous emulsion is provided that is environmentally friendly, halogen free and solvent free. The composition is compatible with various types of insulating materials and may be applied after the wire or cable is cooled and also by spraying or submerging the wire or cable in a bath. The composition contains lubricating agents that provide lower coefficient of friction for wire or cable installation and continuous wire or cable surface lubrication thereafter.

A solder material capable of suppressing the occurrence of electromigration is provided.

The solder material is core ball 1A which comprises spherical core 2A composed of Cu or a Cu alloy, and solder layer 3A coating core 2A, and wherein solder layer 3A has:

a Cu content of 0.1 mass % or more and 3.0 mass % or less,

a Bi content of 0.5 mass % or more and 5.0 mass % or less,

a Ag content of 0 mass % or more and 4.5 mass % or less, and

a Ni content of 0 mass % or more and 0.1 mass % or less,

with Sn being the balance.

A rotatable connector device includes a stationary member, a rotatable member rotatably attached thereto, and a flat cable housed in an annular space between the stationary and rotatable members. One end of the flat cable is connected to a stationary-side connector fixed to the stationary member, and another end of the flat cable is connected to a rotating-side connector fixed to the rotatable member. The flat cable includes a folded-back portion bent and folded back at a middle section in a longitudinal direction thereof. The flat cable includes a predetermined number of conductor/conductors each comprising a copper alloy and wound up or rewound with bending kept at the folded-back portion. Each conductor satisfies Y14.175X.sup.2249.35X+1406.9 for a bending radius of 4 to 8 mm, where X denotes bending radius, and Y denotes 0.2% yield stress, and has an electrical conductivity of 50% IACS or greater.

Methods for producing a multifilament Nb.sub.3Sn superconducting wire having a Jc value of at least 2000 A/mm.sup.2 at 4.2 K and 12 T by a) packing a plurality of Cu encased Nb rods within a first matrix which is surrounded by an intervening Nb diffusion barrier and a second matrix on the other side of the barrier remote from the rods thereby forming a packed subelement for the superconducting wire; b) providing a source of Sn within the subelement; c) assembling the metals within the subelement, the relative sizes and ratios of Nb, Cu and Sn being selected such that (i) the Nb fraction of the subelement cross section including and within the diffusion barrier is from 50 to 65% by area; (ii) the atomic ratio of the Nb to Sn including and within the diffusion barrier of the subelement is from 2.7 to 3.7; (iii) the ratio of the Sn to Cu within the diffusion barrier of the subelement is such that the Sn wt %/(Sn wt %+Cu wt %) is 45%-65%; (iv) the Cu to Nb local area ratio (LAR) of the Cu-encased Nb rods is from 0.10 to 0.30; (v) the Nb diffusion barrier being fully or partially converted to Nb.sub.3Sn by subsequent heat treatment; and (vi) the thickness of the Nb diffusion barrier is greater than the radius of the Nb portions of the Cu encased Nb rods; and d) assembling the subelements in a further matrix and reducing the assemblage to wire form such that (i) the multifilamentary Nb.sub.3Sn superconducting wire is formed of a plurality of the subelements, each having a Nb diffusion barrier to thereby form a wire having a distributed barrier design; (ii) the Nb portions of the copper encased Nb rods in the final wire are of diameter from 0.5 to 7 m before reaction, and (iii) the Nb diffusion barrier that is fully or partially converted to Nb.sub.3Sn by heat treatment is from 0.8 to 11 m thickness before reaction; and e) heat treating the final size wire from step d) to form the Nb.sub.3Sn superconducting phases, and multifilament Nb.sub.3Sn superconducting wires made thereby are described herein.

An electroconductive paste comprises high melting point metal particles having a melting point that exceeds the firing temperature; molten metal particles containing a metal or an alloy that melts at the firing temperature, for which the melting point is 700 C. or less; active metal particles containing an active metal; and an organic vehicle.

A solder bump structure includes a pillar formed on an electrode pad. The pillar has a concave curve-shaped surface and a geometry defined at least in part by dimensions including a first height greater than a first width. The solder bump structure further includes solder formed on the concave curve-shaped surface of the pillar. The solder has a convex top surface and having dimensions including a second height greater than a second width due to the geometry of the pillar.

The present invention relates to a method for manufacturing a nanowire of a core-shell structure including a metal nanowire core and a graphene shell, comprising the steps of: providing a metal nanowire; and coating the metal nanowire with graphene by a plasma chemical vapor deposition method. In addition, the present invention relates to: a nanowire having a core-shell structure including a metal nanowire core and a graphene shell; and a transparent electrode formed from the nanowire. The transparent electrode formed from the nanowire having a core-shell structure has advantages of having controllable copper oxidation characteristics, being optically, electrically and mechanically excellent, and enabling the transparent electrode to be manufactured at a low cost.

A multilayer printed wiring board has excellent high-frequency characteristics. The multilayer printed wiring board includes one or more conductive layers and one or more insulating layers. In the multilayer printed wiring board, the one or more conductive layers and the one or more insulating layers are alternately stacked. Each insulating layer of the one or more insulating layers includes one or more of a polyolefin resin layer, a fluororesin layer, a polyphenylene ether resin layer, a polyamideimide resin layer, and a polyimide resin layer. At least one insulating layer of the one or more insulating layers includes a polyolefin resin layer.

A surface finish for a printed circuit board (PCB) and semiconductor wafer includes a nickel disposed over an aluminum or copper conductive metal surface. A barrier layer including all or fractions of a nitrogen-containing molecule is deposited on the surface of the nickel layer to make a barrier layer/electroless nickel (BLEN) surface finish. The barrier layer allows solder to be reflowed over the surface finish. Optionally, gold (e.g., immersion gold) may be coated over the barrier layer to create a nickel/barrier layer/gold (NBG) surface treatment. Presence of the barrier layer causes the surface treatment to be smoother than a conventional electroless nickel/immersion gold (ENIG) surface finish. Presence of the barrier layer causes a subsequently applied solder joint to be stronger and less subject to brittle failure than conventional ENIG.

Methods of coating contacts to have a specific color. The color can be selected to match a color of a portion of a device enclosure for an electronic device housing the contacts. Examples can instead provide methods of coating contacts to have a color to contrast with a color of a portion of the device enclosure. These methods can provide electrical contacts having a low contact resistance and good corrosion and scratch resistance.