H01B1/026

Drift current coulombic storage apparatus
10031536 · 2018-07-24 · ·

A circuit for improving instantaneous current flow in an AC-to-DC power supply for an electronic device, said circuit positioned immediately prior to an AC input for the AC-to-DC power supply and providing a reserve of electrical charge independent of the inductive impedance of the AC power line.

Soft-dilute-copper-alloy material, soft-dilute-copper-alloy wire, soft-dilute-copper-alloy sheet, soft-dilute-copper-alloy stranded wire, and cable, coaxial cable and composite cable using same

A soft dilute copper alloy material includes 2 mass ppm to 12 mass ppm of sulfur, more than 2 mass ppm and not more than 30 mass ppm of oxygen, 4 mass ppm to 55 mass ppm of Ti, and a balance including copper. An average crystal grain size is not more than 20 m in a surface layer up to a depth of 50 m from a surface. The average crystal grain size in the surface layer is less than the average crystal grain size in an inner portion located more interiorly than the surface layer.

SENSOR LINE, MEASURING ARRANGEMENT AND METHOD FOR DETECTING AN AMBIENT VARIABLE
20180203323 · 2018-07-19 ·

A sensor line, a measuring arrangement and a method detect a change in an ambient variable. The sensor line serves for detecting a change in an ambient variable, in particular the temperature. The sensor line has a first optical waveguide, a second optical waveguide and also a material that changes its transparency depending on the value of the ambient variable. The material is positioned between the first optical waveguide and the second optical waveguide in such a way that light from the first optical waveguide is able to be coupled into the second optical waveguide in an event of a change in the transparency.

Transparent Conductive Film
20240355501 · 2024-10-24 ·

A transparent conductive film (10) that has a substrate (14) having a surface (14a, 14b), a nanowire layer (12, 12a) over one or more portions of the surface (14a, 14b) of the substrate (14), and a conductive layer (16, 16a) on the portions comprising the nanowire layer (12, 12a), the conductive layer (16, 16a) comprising carbon nanotubes (CNT) and a binder.

CONDUCTIVE WIRE, METHOD FOR MANUFACTURING CONDUCTIVE WIRE, CASTING CONDUCTIVE WIRE, CABLE AND METHOD FOR MANUFACTURING CABLE

A method for manufacturing a conductive wire includes conducting a continuous casting of a conductive alloy material at a casting rate of not less than 40 mm/min and not more than 200 mm/min to form a conductive wire with a primary diameter, the conductive alloy material containing not more than 1.0 mass % of an added metal element, reducing a diameter of the conductive wire with the primary diameter to form a conductive wire with a secondary diameter, heat treating the conductive wire with the secondary diameter so that tensile strength thereof is reduced to not less than 90% and less than 100% of tensile strength before the heat treating, and reducing a diameter of the conductive wire with the secondary diameter and the reduced tensile strength to generate a logarithmic strain of 7.8 to 12.0 therein to form a conductive wire with a tertiary diameter.

Copper-alloy plate for terminal/connector material, and method for producing copper-alloy plate for terminal/connector material

A copper alloy sheet for terminal and connector materials contains 4.5 mass % to 12.0 mass % of Zn, 0.40 mass % to 0.9 mass % of Sn, 0.01 mass % to 0.08 mass % of P, and 0.20 mass % to 0.85 mass % of Ni with a remainder being Cu and inevitable impurities, a relationship of 11[Zn]+7.5[Sn]+16[P]+3.5[Ni]19 is satisfied, a relationship of 7[Ni]/[P]40 is satisfied in a case in which the content of Ni is in a range of 0.35 mass % to 0.85 mass %, an average crystal grain diameter is in a range of 2.0 m to 8.0 m, an average particle diameter of circular or elliptical precipitates is in a range of 4.0 nm to 25.0 nm or a proportion of the number of precipitates having a particle diameter in a range of 4.0 nm to 25.0 nm in the precipitates is 70% or more, an electric conductivity is 29% IACS or more, a percentage of stress relaxation is 30% or less at 150 C. for 1000 hours as stress relaxation resistance, bending workability is R/t0.5 at W bending, solderability is excellent, and a Young's modulus is 10010.sup.3 N/mm.sup.2 or more.

Copper alloy and method for manufacturing the same

A copper alloy of the present invention contains 5.00 to 8.00 atomic percent of Zr and includes Cu and a CuZr compound, and two phases of the Cu and the CuZr compound form a mosaic-like structure which includes no eutectic phase and in which when viewed in cross section, crystals having a size of 10 m or less are dispersed. This copper alloy is formed by a manufacturing method including a sintering step of performing spark plasma sintering on a CuZr binary system alloy powder at a temperature of 0.9 Tm C. or less (Tm( C.): melting point of the alloy powder) by supply of direct-currant pulse electricity, the CuZr binary system alloy powder having an average grain diameter of 30 m or less and a hypoeutectic composition which contains 5.00 to 8.00 atomic percent of Zr. The CuZr compound may include at least one of Cu.sub.5Zr, Cu.sub.9Zr.sub.2, and Cu.sub.8Zr.sub.3.

Metal particles having intermetallic compound nano-composite structure crystal
10016848 · 2018-07-10 · ·

Aiming at providing a metal particle, an electro-conductive paste, a formed article, and a laminated article that are able to form a highly reliable and high-quality electric interconnect, an electro-conductive bonding portion, or a three-dimensional structure that is less likely to produce the Kirkendall void, this invention discloses a metal particle which include an outer shell and a core part, the outer shell including an intermetallic compound and covering the core part.

ELECTRIC WIRE STRUCTURE AND METHOD OF MANUFACTURING THEREOF
20180190406 · 2018-07-05 · ·

Provided is an electric wire structure including a copper (Cu) electric wire extending in a direction; and a graphene coating layer formed on an outer portion of the Cu electric wire to surround the Cu electric wire, wherein the Cu electric wire includes Cu having a purity of 99.9% or greater.

PRODUCTION METHOD OF DOUBLE-WIRE STRING LIGHTS
20180187840 · 2018-07-05 · ·

A production method of double-wire string lights, comprising the steps of: prepaying wires; annealing to optimize the flexibility of the wires; cooling and washing; making outer layer of the wires; removing the outer layers of both the positive and negative wires to expose the positive and negative wires and form the bulb welding positions; coating with tin; using an automatic bulb welding machine for welding of the positive wire bulb welding positions and the negative wire bulb welding positions corresponding to the positive poles and negative poles of the surface-mounted LED chips; wrapping the surface-mounted LED chips and the bulb welding positions with high-transmission epoxy resin and then putting them into a UV pre-solidification equipment with an extraman to solidify the epoxy resin in exposure to UV, demolding after solidification; the simple structure offers convenience and flexibility in use.