Single crystals of the new semiconducting oxychalcogenide phase were synthesized using a novel crystal growth method. The crystals had low defects and homogeneous composition as characterized by single crystal X-ray diffraction and scanning electron microscopy, respectively. Heat capacity and resistivity measurements were in agreement with the calculated band structure calculations indicating semiconductivity, with a band gap of about 3 eV.

A method of making a transparent conductive material includes: preparing a reactive solution that contains a solvent, a metal salt which is dissolved in the solvent, and a powder of graphene oxide which is dispersed in the solvent; and simultaneously reducing metal ions of the metal salt and the graphene oxide in the reactive solution to form a plurality of core-shell nanowires, each of which includes a core of a metal reduced from the metal ions, and a shell of graphene surrounding the core.

A method of making a transparent conductive material includes: preparing a reactive solution that contains a solvent, a metal salt which is dissolved in the solvent, and a powder of graphene oxide which is dispersed in the solvent; and simultaneously reducing metal ions of the metal salt and the graphene oxide in the reactive solution to form a plurality of core-shell nanowires, each of which includes a core of a metal reduced from the metal ions, and a shell of graphene surrounding the core.

A solid ion conductor including a garnet-type oxide represented by Formula 1, a solid electrolyte including the solid ion conductor, an electrochemical device including the ion conductor, and a method of preparing the ion conductor are disclosed.

Li.sub.AM1.sub.BLa.sub.CM2.sub.DZr.sub.EM3.sub.FM4.sub.GO.sub.HX.sub.I  Formula 1

In Formula 1, M1 is a monovalent cation, a divalent cation, a trivalent cation, or a combination thereof, M2 is a monovalent cation, a divalent cation, a trivalent cation, or a combination thereof, M3 is a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, a hexavalent cation, or a combination thereof, M4 is Ir, Ru, Mn, Sn, or a combination thereof, X is a monovalent anion, a divalent anion, a trivalent anion, or a combination thereof, and 6≤A≤8, 0≤B<2, 2.8≤C≤3, 0≤D≤0.2, 0<E<2.0, 0<F<2.0, 0<G≤0.2, 9≤H≤12, and 0≤I≤2 are satisfied.

A solid ion conductor including a garnet-type oxide represented by Formula 1, a solid electrolyte including the solid ion conductor, an electrochemical device including the ion conductor, and a method of preparing the ion conductor are disclosed.

Li.sub.AM1.sub.BLa.sub.CM2.sub.DZr.sub.EM3.sub.FM4.sub.GO.sub.HX.sub.I  Formula 1

In Formula 1, M1 is a monovalent cation, a divalent cation, a trivalent cation, or a combination thereof, M2 is a monovalent cation, a divalent cation, a trivalent cation, or a combination thereof, M3 is a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, a hexavalent cation, or a combination thereof, M4 is Ir, Ru, Mn, Sn, or a combination thereof, X is a monovalent anion, a divalent anion, a trivalent anion, or a combination thereof, and 6≤A≤8, 0≤B<2, 2.8≤C≤3, 0≤D≤0.2, 0<E<2.0, 0<F<2.0, 0<G≤0.2, 9≤H≤12, and 0≤I≤2 are satisfied.

Radiofrequency and other electronic devices can be formed from textured hexaferrite materials, such as Z-phase barium cobalt ferrite Ba.sub.3Co.sub.2Fe.sub.24O.sub.41 (Co.sub.2Z) having enhanced resonant frequency. The textured hexaferrite material can be formed by sintering fine grain hexaferrite powder at a lower temperature than conventional firing temperatures to inhibit reduction of iron. The textured hexaferrite material can be used in radiofrequency devices such as circulators or telecommunications systems.

Radiofrequency and other electronic devices can be formed from textured hexaferrite materials, such as Z-phase barium cobalt ferrite Ba.sub.3Co.sub.2Fe.sub.24O.sub.41 (Co.sub.2Z) having enhanced resonant frequency. The textured hexaferrite material can be formed by sintering fine grain hexaferrite powder at a lower temperature than conventional firing temperatures to inhibit reduction of iron. The textured hexaferrite material can be used in radiofrequency devices such as circulators or telecommunications systems.

A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

A method of controlling a growth crystallographic plane of a metal oxide semiconductor having a wurtzite crystal structure by using a thermal chemical vapor deposition method includes controlling a growth crystallographic plane by allowing the metal oxide semiconductor to grow in a non-polar direction by using a source material including a thermal decomposition material that reduces a surface energy of a polar plane of the metal oxide semiconductor.

A composition for solar cell electrodes and electrodes fabricated using the same. The composition includes a silver (Ag) powder; a first glass frit containing PbO and a second glass frit containing V.sub.2O.sub.5 and TeO.sub.2; and an organic vehicle. The composition includes two types of glass frits on PbO and V.sub.2O.sub.5-TeO.sub.2, respectively, thereby minimizing contact resistance and adverse influence on a p-n junction of silicon solar cells.