A flame-retardant flat electrical cable has a magnesium oxide dielectric layer. A plurality of spaced apart substantially parallel electrical conductors generally lie in the same plane and extend along the length of the cable. A dielectric layer is disposed on the top and/or bottom sides of the cable and covers the conductors. The dielectric layer has at least 90% magnesium oxide by weight.

The transparent conductor includes a transparent resin substrate, a first metal oxide layer, a metal layer containing a silver alloy, and a second metal oxide layer in the order presented. The first metal oxide layer contains zinc oxide, indium oxide, and titanium oxide, and the content of SnO.sub.2 in the first metal oxide layer is 40 mol % or less with respect to the total of four components of zinc oxide, indium oxide, titanium oxide, and tin oxide in terms of ZnO, In.sub.2O.sub.3, TiO.sub.2, and SnO.sub.2, respectively. The second metal oxide layer contains the four components, and the content of SnO.sub.2 in the second metal oxide layer is 12 to 40 mol % with respect to the total of the four components in terms of ZnO, In.sub.2O.sub.3, TiO.sub.2, and SnO.sub.2, respectively.

The transparent conductor includes a transparent resin substrate, a first metal oxide layer, a metal layer containing a silver alloy, and a second metal oxide layer in the order presented. The first metal oxide layer contains zinc oxide, indium oxide, and titanium oxide, and the content of SnO.sub.2 in the first metal oxide layer is 40 mol % or less with respect to the total of four components of zinc oxide, indium oxide, titanium oxide, and tin oxide in terms of ZnO, In.sub.2O.sub.3, TiO.sub.2, and SnO.sub.2, respectively. The second metal oxide layer contains the four components, and the content of SnO.sub.2 in the second metal oxide layer is 12 to 40 mol % with respect to the total of the four components in terms of ZnO, In.sub.2O.sub.3, TiO.sub.2, and SnO.sub.2, respectively.

Provided is a bonding wire for a semiconductor package, which includes an insulating layer formed on the outer surface of a core portion by a thin layer deposition method, so that the occurrence of a short-circuit during wire bonding is fundamentally prevented and bondability is improved. The bonding wire for a semiconductor package comprises: a core portion formed of a conductive metal; and an insulating layer formed on the outer surface of the core portion by a thin layer deposition method.

Provided is a bonding wire for a semiconductor package, which includes an insulating layer formed on the outer surface of a core portion by a thin layer deposition method, so that the occurrence of a short-circuit during wire bonding is fundamentally prevented and bondability is improved. The bonding wire for a semiconductor package comprises: a core portion formed of a conductive metal; and an insulating layer formed on the outer surface of the core portion by a thin layer deposition method.

A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of A.sub.aB.sub.bO.sub.oN.sub.n (a+b+o+n=5), wherein A is one or more selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, B is one or more selected from Ta, Nb, Ti, and W, and crystalline particles constituting the dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles have columnar shape crystals.

A dielectric thin film has a main component including an oxynitride having excellent dielectric property, and a capacitance element includes the dielectric thin film. The dielectric thin film has a main component made of an oxynitride expressed by a compositional formula of A.sub.aB.sub.bO.sub.oN.sub.n (a+b+o+n=5), wherein A is one or more selected from Sr, Ba, Ca, La, Ce, Pr, Nd, and Na, B is one or more selected from Ta, Nb, Ti, and W, and crystalline particles constituting the dielectric thin film are polycrystalline which are not oriented to a particular crystal plane orientation, and further the crystalline particles have columnar shape crystals.

A method for forming an insulating coating on an electrical steel sheet is provided. The method includes preparing a treatment solution by adding a Si compound to water and applying the treatment solution to a surface of the electrical steel sheet. Fe in the electrical steel sheet dissolves in the treatment solution and, thereafter, the electrical steel sheet and treatment solution are baked to form the insulating film. In the insulating film, a coating weight of Si in terms of SiO.sub.2 is 50% to 99% of the total coating weight, and a ratio (Fe/Si) of content of Fe to content of Si in the insulating coating is 0.01 to 0.6 on a molar basis.

A method for forming an insulating coating on an electrical steel sheet is provided. The method includes preparing a treatment solution by adding a Si compound to water and applying the treatment solution to a surface of the electrical steel sheet. Fe in the electrical steel sheet dissolves in the treatment solution and, thereafter, the electrical steel sheet and treatment solution are baked to form the insulating film. In the insulating film, a coating weight of Si in terms of SiO.sub.2 is 50% to 99% of the total coating weight, and a ratio (Fe/Si) of content of Fe to content of Si in the insulating coating is 0.01 to 0.6 on a molar basis.

Aspects relate to patterned nanostructures having a feature size not including film thickness of below 5 microns. The patterned nanostructures are made up of nanoparticles having an average particle size of less than 100 nm. A nanoparticle composition, which, in some cases, includes a binder, is applied to a substrate. A patterned mold used in concert with electromagnetic radiation function to manipulate the nanoparticle composition in forming the patterned nanostructure. In some embodiments, the patterned mold nanoimprints a pattern onto the nanoparticle composition and the composition is cured through UV or thermal energy. Three-dimensional patterned nanostructures may be formed. A number of patterned nanostructure layers may be prepared and joined together. In some cases, a patterned nanostructure may be formed as a layer that is releasable from the substrate upon which it is initially formed. Such releasable layers may be arranged to form a three-dimensional patterned nanostructure for suitable applications.